Test circuit of an integrated circuit on a wafer

• US 8,941,401 B2
• Filed: 04/25/2011
• Issued: 01/27/2015
• Est. Priority Date: 04/29/2010
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Pagani, Alberto
• Primary Examiner(s): Koval, Melissa
• Assistant Examiner(s): CHAN, EMILY Y
• Application Number:
  US13/093,738
• Publication Number:
  US 20110267086A1
• Time in Patent Office: 1,373 Days
• Field of Search: 324537-538, 324/754.21, 32475001-75705, 32476201-76202
• US Class Current: 324/754.21
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: G01R 31/3025 Wireless interface with the DUT
• CPC Class Codes: G01R 31/31716 Testing of input or output with loop-back
• CPC Class Codes: G01R 31/318511 Wafer Test
• CPC Class Codes: G01R 35/00 Testing or calibrating of apparatus covered by the other groups of this subclass

Abstract

A test circuit is described of a circuit integrated on wafer of the type comprising at least one antenna of the embedded type comprising at least one test antenna associated with said at least one embedded antenna that realizes its connection of the wireless loopback type creating a wireless channel for said at least one embedded antenna and allows its electric test, transforming an electromagnetic signal of communication between said at least one embedded antenna and said at least one test antenna into an electric signal that can be read by a test apparatus.

Claims

1. A wafer, comprising:

a first integrated circuit, including;

at least one test pad configured to couple to a testing device;

a first embedded antenna coupled to the at least one test pad of the first integrated circuit; and

a first test antenna to form a wireless link with the first embedded antenna in a test mode of operation;

a second integrated circuit, including;

at least one test pad configured to couple to the testing device;

a second embedded antenna coupled to the at least one test pad of the second integrated circuit; and

a second test antenna to form a wireless link with the second embedded antenna in the test mode of operation; and

at least one network to form a wired link between the first test antenna of the first integrated circuit and the second test antenna of the second integrated circuit in the test mode of operation, wherein in the test mode of operation a communication link is formed between the at least one test pad of the first integrated circuit and the at least one test pad of the second integrated circuit by the wireless link between the first embedded antenna and the first test antenna, the wired link between the first test antenna and the second test antenna and the wireless link between the second test antenna and the second embedded antenna.

2. The wafer of claim 1, comprising a conductive layer above a passivation layer of said wafer, said conductive layer configured to form a closed loop surrounding said first and second embedded antennas.

3. The wafer of claim 2 wherein said conductive layer covers at least one of the first and second integrated circuits.

4. The wafer of claim 2 wherein said conductive layer is realized in part inside and in part outside at least one of the first and second integrated circuits.

5. The wafer of claim 1 wherein the at least one test pad of the first integrated circuit is configured to be contacted by at least one probe of the testing device.

6. The wafer of claim 1, comprising at least two test pads in a scribe line of separation of the first and second integrated circuits.

7. The wafer of claim 1 wherein the first and second embedded antennas each comprise a magnetic dipole and the first and second test antennas have a planar structure in a single level of conductive material that surrounds with a closed loop said first and second embedded antennas.

8. The wafer of claim 1 wherein the first and second embedded antennas each comprise a hertzian dipole, each embedded antenna being coupled to a respective receiver/transmitter, wherein said test antennas each have a hertzian dipole, facing a respective embedded antenna with hertzian dipole, and are coupled to at least one of a transmission line or circuit network.

9. The wafer of claim 1 wherein the first and second embedded antennas are of a capacitive type and the first and second test antennas comprise one strip of conductive material that overlaps at least in part onto said first and second embedded antennas of the capacitive type.

10. The wafer of claim 1 wherein the first and second embedded antennas are of a capacitive type and are above a passivation layer of said wafer, and the first and second test antennas comprise a strip of conductive material positioned so as not to overlap on the first and second embedded antennas and to be near enough to exploit edge capacitive effects.

11. The wafer of claim 1 wherein in the test mode of operation said first and second test antennas are configured to exchange radio frequency (RF) signals of an irradiated type, with said first and second embedded antennas, and to transmit RF signals on the wired link between the test antennas.

12. The wafer of claim 1 wherein the at least one network comprises an interface configured to couple to the first test antenna, an interface configured to couple to the second test antenna and a wired link crossing a scribe line of separation between the first integrated circuit and the second integrated circuit.

13. A testing device, comprising:

a first test antenna configured to form a wireless loopback connection with a first embedded antenna of a semiconductor wafer to facilitate testing of the first embedded antenna by transforming an electromagnetic signal between the first test antenna and the first embedded antenna into an electrical signal; and

a second test antenna configured to form a wireless loopback connection with a second embedded antenna of the semiconductor wafer to facilitate testing of the second embedded antenna by transforming an electromagnetic signal between the second test antenna and the second embedded antenna, wherein the first and second embedded antennas each comprise a magnetic dipole and the first and second test antennas have a planar structure in a single level of conductive material that surrounds with a closed loop said first and second embedded antennas.

14. The testing device of claim 13 wherein said first and second test antennas are configured to exchange radio frequency (RF) signals of an irradiated type, with said first and second embedded antennas, and to transmit RF signals inside the testing device between said test antennas.

15. The testing device of claim 13 wherein said first and second test antennas are interconnected through at least one transmission line or circuit network.

16. The testing device of claim 15 wherein said transmission line or circuit network crosses a scribe line of separation between a first and a second integrated circuit comprising said first and second embedded antennas.

17. The testing device of claim 13 comprising at least one first and one second pad in an area of one of a first and of a second integrated circuit comprising said first and second test antennas.

18. The testing device of claim 13 further comprising an ATE antenna configured to communicate with said test antennas.

19. The testing device of claim 18, comprising a supplementary antenna configured to communicate with said test antennas and with said ATE antenna.

20. The testing device of claim 18 wherein said ATE antenna is coupled to a transmitter having at least one of a core of magnetic material and a material with a high dielectric constant.

21. The testing device of claim 13 wherein the first and second test antenna are outside a wafer portion whereon a first and a second integrated circuit are integrated, said circuits comprising said first and second embedded antennas.

22. The testing device of claim 13 wherein the first and second antennas are housed in a probe card of said testing device.

23. The testing device of claim 22 wherein said probe card comprises said test antennas, which are coupled together through at least one of a transmission line and a circuit network and have respective cores of magnetic material or a material with a high dielectric constant.

24. The testing device of claim 23 wherein said probe card comprises a single test antenna configured to wirelessly couple with said first and second embedded antennas.

25. A testing device, comprising:

a first test antenna configured to form a wireless loopback connection with a first embedded antenna of a semiconductor wafer to facilitate testing of the first embedded antenna by transforming an electromagnetic signal between the first test antenna and the first embedded antenna into an electrical signal; and

a second test antenna configured to form a wireless loopback connection with a second embedded antenna of the semiconductor wafer to facilitate testing of the second embedded antenna by transforming an electromagnetic signal between the second test antenna and the second embedded antenna, wherein the first and second embedded antennas each comprise a hertzian dipole, each embedded antenna being coupled to a respective receiver/transmitter, wherein said test antennas each have a hertzian dipole, facing a respective embedded antenna with hertzian dipole, and are coupled to at least one of a transmission line or circuit network.

26. A testing device, comprising:

a first test antenna configured to form a wireless loopback connection with a first embedded antenna of a semiconductor wafer to facilitate testing of the first embedded antenna by transforming an electromagnetic signal between the first test antenna and the first embedded antenna into an electrical signal; and

a second test antenna configured to form a wireless loopback connection with a second embedded antenna of the semiconductor wafer to facilitate testing of the second embedded antenna by transforming an electromagnetic signal between the second test antenna and the second embedded antenna, wherein the first and second embedded antennas are of a capacitive type and the first and second test antennas comprise one strip of conductive material that overlaps at least in part onto said first and second embedded antennas of the capacitive type.

27. The testing device of claim 26 wherein the strip of conductive material is configured to form an ATE antenna with a magnetic dipole.

28. A testing device, comprising:

a first test antenna configured to form a wireless loopback connection with a first embedded antenna of a semiconductor wafer to facilitate testing of the first embedded antenna by transforming an electromagnetic signal between the first test antenna and the first embedded antenna into an electrical signal; and

a second test antenna configured to form a wireless loopback connection with a second embedded antenna of the semiconductor wafer to facilitate testing of the second embedded antenna by transforming an electromagnetic signal between the second test antenna and the second embedded antenna, wherein the first and second embedded antennas are of a capacitive type and are above a passivation layer of said wafer, and the first and second test antennas comprise a strip of conductive material positioned so as not to overlap on the first and second embedded antennas and to be near enough to exploit edge capacitive effects.

29. The testing device of claim 28 wherein the strip of conductive material is configured to form an ATE antenna with a magnetic dipole.

30. An integrated circuit, comprising:

at least one embedded antenna;

at least a residual portion of a first testing device configured to form a wireless loopback connection with the first embedded antenna to transform an electromagnetic signal between the first testing device and the first embedded antenna into an electrical signal, wherein said embedded antenna is of a capacitive type and said at least a residual portion of said testing device comprises at least a residual portion of a strip of conductive material coupled to a corresponding transceiver/transponder and configured to form a capacitive hertzian dipole.

31. The integrated circuit of claim 30 wherein said at least a residual portion of said first testing device comprises at least one pad configured to be used in successive processing steps after said integrated circuit is singled from a wafer.

32. The integrated circuit of claim 30 wherein said at least a residual portion comprises at least a residual portion of a strip of conductive material, the integrated circuit further comprising a ground plane configured to form a patch antenna with said at least a residual portion of said strip of conductive material.

33. The integrated circuit of claim 30 wherein the at least a residual portion comprises a first test antenna and a residual portion of a metallic path, the residual portion of the metallic path extending from the first test antenna up to a scribe line of said integrated circuit.