Group III-nitrides on Si substrates using a nanostructured interlayer

• US 8,946,674 B2
• Filed: 08/29/2006
• Issued: 02/03/2015
• Est. Priority Date: 08/31/2005
• Status: Active Grant

• Current Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Original Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Inventors: Kryliouk, Olga, Park, Hyun Jong, Anderson, Timothy J.
• Primary Examiner(s): GEBREMARIAM, SAMUEL A
• Application Number:
  US11/512,615
• Publication Number:
  US 20070108466A1
• Time in Patent Office: 3,080 Days
• Field of Search: 257/18, 257/11, 257/14
• US Class Current: 257/11
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041

Abstract

A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured In_xGa_1-xN (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.

Claims

1. A layered group III-nitride article, comprising:

a single crystal silicon comprising substrate;

a nanostructured interlayer;

said nanostructured interlayer comprising a nanostructured feature selected from the group consisting of a columnar film, a plurality of nanorods, a plurality of microrods, and a combination thereof;

and a highly textured crystal group III-nitride layer, said highly textured group III-nitride layer being crack free and having a thickness of at least 10 μ

m wherein said nanostructured interlayer is disposed between said silicon substrate and said highly textured group III-nitride layer.

2. The article of claim 1, wherein said silicon substrate is (111) or (100) oriented.

3. The article of claim 2, wherein said highly textured group III-nitride layer comprises GaN.

4. The article of claim 3, wherein said interlayer comprises an InGaN alloy.

5. The article of claim 1, wherein said nanostructured interlayer comprises nanorods, microrods, or a combination thereof.

6. The article of claim 1, wherein said nanostructured interlayer comprises nanorods, said nanorods being well aligned.

7. The article of claim 1, wherein said nanostructured interlayer comprises nanorods, said nanorods being randomly oriented.

8. The article of claim 1, wherein said nanostructured interlayer comprises nanorods, said nanorods having an average rod diameter of 300 to 700 nm.

9. The article of claim 1, wherein said nanostructured interlayer comprises nano rods, said nanorods comprising InN.

10. The article of claim 1, wherein said nanostructured interlayer comprises In_xGa_1-xN, wherein 1>

x>

0.

11. The article of claim 1, wherein said nanostructured interlayer has a thickness of 0.1 to 3.0 μ

m.

12. The article of claim 1, wherein said silicon substrate is (111) oriented.