Semiconductor device
First Claim
1. A semiconductor device comprising:
- a first oxide semiconductor film;
a second oxide semiconductor film over the first oxide semiconductor film, the second oxide semiconductor film comprising a channel region and a low-resistance region;
a gate insulating film over the second oxide semiconductor film;
a gate electrode over the gate insulating film;
a first insulating film in contact with a side surface of the gate electrode;
a first electrode in contact with a side surface of the second oxide semiconductor film; and
a second electrode in contact with the first electrode, the second oxide semiconductor film, and the first insulating film,wherein a resistance of the low-resistance region is lower than a resistance of the channel region,wherein the gate electrode overlaps the channel region, andwherein the low-resistance region is in contact with the first electrode and the second electrode.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device in which release of oxygen from side surfaces of an oxide semiconductor film including c-axis aligned crystal parts can be prevented is provided. The semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film including c-axis aligned crystal parts, and an oxide film including c-axis aligned crystal parts. In the semiconductor device, the first oxide semiconductor film, the second oxide semiconductor film, and the oxide film are each formed using a IGZO film, where the second oxide semiconductor film has a higher indium content than the first oxide semiconductor film, the first oxide semiconductor film has a higher indium content than the oxide film, the oxide film has a higher gallium content than the first oxide semiconductor film, and the first oxide semiconductor film has a higher gallium content than the second oxide semiconductor film.
-
Citations
16 Claims
-
1. A semiconductor device comprising:
-
a first oxide semiconductor film; a second oxide semiconductor film over the first oxide semiconductor film, the second oxide semiconductor film comprising a channel region and a low-resistance region; a gate insulating film over the second oxide semiconductor film; a gate electrode over the gate insulating film; a first insulating film in contact with a side surface of the gate electrode; a first electrode in contact with a side surface of the second oxide semiconductor film; and a second electrode in contact with the first electrode, the second oxide semiconductor film, and the first insulating film, wherein a resistance of the low-resistance region is lower than a resistance of the channel region, wherein the gate electrode overlaps the channel region, and wherein the low-resistance region is in contact with the first electrode and the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device comprising:
-
a first oxide semiconductor film; a second oxide semiconductor film over the first oxide semiconductor film, the second oxide semiconductor film comprising a channel region and a low-resistance region; a gate insulating film over the second oxide semiconductor film; a gate electrode over the gate insulating film; a first insulating film in contact with a side surface of the gate electrode; a first electrode in contact with a side surface of the second oxide semiconductor film; and a second electrode in contact with the first electrode, the second oxide semiconductor film, and the first insulating film, wherein a resistance of the low-resistance region is lower than a resistance of the channel region, wherein the gate electrode overlaps the channel region, wherein the low-resistance region is in contact with the first electrode and the second electrode, and wherein the side surface of the gate electrode and a boundary between the channel region and the low-resistance region are aligned. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
Specification