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Grid-UMOSFET with electric field shielding of gate oxide

  • US 8,946,726 B2
  • Filed: 03/20/2013
  • Issued: 02/03/2015
  • Est. Priority Date: 09/14/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a drift layer of a first conductivity type;

    a channel layer of a second conductivity type on the drift layer, the second conductivity type opposite the first conductivity type;

    a source layer of the first conductivity type on the channel layer;

    a source contact extending on the source layer;

    a trench extending through the source layer and the channel layer, and into the drift layer, so that a bottom of the trench is within the drift layer;

    a gate electrode within the trench;

    a buried region of the second conductivity type within the drift layer, the buried region extending laterally to include a portion directly underneath the trench so that a shallow region of the drift layer is between the bottom of the trench and the buried region; and

    a conductive via electrically connecting the source contact to the buried region.

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