LED with enhanced light extraction

• US 8,946,741 B2
• Filed: 11/10/2008
• Issued: 02/03/2015
• Est. Priority Date: 11/09/2007
• Status: Active Grant

• Current Assignee: Lumileds Holding B.V. (Apollo Global Management, Inc.)
• Original Assignee: PhotonStar LED Limited (Cizzle Biotechnology Holdings Plc)
• Inventors: McKenzie, James Stuart, Zoorob, Majd
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US12/742,247
• Publication Number:
  US 20100283075A1
• Time in Patent Office: 2,276 Days
• Field of Search: 257/91, 257/95, 257/98, 257/99
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light emitting device having a plurality of light extracting elements defined on an upper surface of a semiconductor layer of the device, wherein the light extracting elements are adapted to couple light out of the device and to modify the far field emission profile of the device. Each element comprises an elongate region having a length at least twice its width and also greater than the effective dominant wavelength of light generated in the device. The elongate region extends orthogonal to the upper surface but not into the light emitting region of the device and may be oriented at an angle of less than 45° relative to one of a pair of basis axis defining a plane parallel to the semiconductor layer. Each elongate region is spatially separated from neighboring elongate regions such that it perturbs light generated in the light emitting region independently of the neighboring regions.

Claims

1. A light emitting device comprising:

a first semiconductor layer having doping of a first type;

a second semiconductor layer having doping of a second type;

a light emitting region interdisposed between the first and the second semiconductor layers, wherein light generated in the light emitting region is extracted from the device via an upper surface of the second semiconductor layer, the light generated has a dominant wavelength, and the light generated has an effective wavelength in the device,

a first electrode disposed on the first semiconductor layer;

a second electrode disposed on the second semiconductor layer; and

a first plurality of evenly distributed light extracting elements defined on an upper surface of the second semiconductor layer, the light extracting elements being adapted to couple light out of the device and to modify the far field emission profile of the device;

wherein

each of the light extracting elements is an elongate indentation in the upper surface of the second semiconductor layer having length, width, and depth dimensions such that the length of each indentation is at least twice the width of the indentation, the length of each indentation is greater than the effective wavelength of the generated light in the device, and the depth of each indentation extends from the upper surface of the second semiconductor layer in an orthogonal direction thereto but does not extend into the light emitting region;

each elongate indentation in the first plurality has its length dimension oriented at a detuning angle relative to an average direction of the first plurality of elongate indentations, the magnitude of the detuning angle being greater than or equal to 0 degrees and less than 45 degrees, such that at least two elongate indentations in the first plurality are not parallel with one another; and

,

each elongate indentation in the first plurality is spatially separated from neighboring elongate indentations in the first plurality such that none of the elongate indentations in the first plurality intersect one another, whereby each indentation in the first plurality perturbs light generated in the light emitting region independently of the neighboring elongate indentations in the first plurality.

2. A light emitting device according to claim 1, wherein the magnitude of the detuning angle is substantially similar for each of the elongate indentations forming the first plurality light extracting elements.

3. A light emitting device according to claim 1, wherein the elongate indentations forming the first plurality of light extracting elements are oriented such that light emitted from the device has an elliptical distribution along the azimuthal axis.

4. A light emitting device according to claim 1, further comprising a second plurality of evenly distributed light extracting elements defined on the upper surface of the second semiconductor layer, the second plurality of light extracting elements being similar to the first plurality of light extracting elements, wherein each elongate indentation in the second plurality has its length dimension oriented at a detuning angle relative to an average direction of the second plurality of elongate indentations, the magnitude of the detuning angle for the first and second plurality of elongate indentations being less than 15 degrees and the average directions of the first and second plurality of elongate indentations being substantially orthogonal to one another such that each elongate indentation in the second plurality intersects an elongate indentation of the first plurality at no more than one location, each elongate indentation in the second plurality is spatially separated from neighboring elongate indentations in the second plurality such that none of the elongate indentations in the second plurality intersect one another, whereby each indentation in the second plurality perturbs light generated in the light emitting region independently of the neighboring elongate indentations in the second plurality.

5. A light emitting device according to claim 1, wherein each elongate indentation has a shape selected from pyramidal, frustro-pyramidal, tapered cuboid, and bevelled cuboid.

6. A light emitting device according to claim 1, wherein each elongate indentation has a transverse cross sectional shape that is one of elliptical, oval, and polygonal.

7. A light emitting device according to claim 1, wherein at least one of the elongate indentations is oriented at a non-zero detuning angle which is equal in magnitude but opposite in sign to that of another of the elongate indentation.

8. A light emitting device according to claim 7, wherein the magnitude of the detuning angle is less than 15 degrees for each of the elongate indentations.

9. A light emitting device according to claim 1, wherein the device has a length and a width and wherein at least one of the elongate indentations has a length greater than one eighth of the length of the device.

10. A light emitting device according to claim 1, wherein all of the elongate indentations have a length greater than one eighth of the length of the device.

11. A light emitting device according to claim 1, wherein the device has a length and a width and wherein all of the elongate indentations have a length less than one quarter of the length of the device.

12. A light emitting device according to claim 1, wherein the length of the elongate indentations is at least 3 microns.

13. A light emitting device according to claim 1, wherein the elongate indentations in the first plurality of light extracting elements are separated on average by at least a minimum of 1.0 micron from neighboring elongate indentations in the first plurality of light extracting elements.

14. A light emitting device according to claim 1, wherein at least a portion of the upper light emitting surface of the second semiconductor layer is partially roughened to increased light emission through the surface.

15. A light emitting device according to claim 14, wherein the depth of any elongate indentations in the partially roughened portion of the second semiconductor layer surface is greater than the depth of the surface roughening.

16. A light emitting device according to claim 1, wherein the first plurality of light extracting elements is defined in a sub-region of the upper surface of the second semiconductor layer, and the first plurality of light extracting elements is substantially repeated in at least one other sub-region of the upper surface of the second semiconductor layer to couple out trapped optical modes residing in the light emitting device.

17. A light emitting device according to claim 1, further comprising an optical mirror having a reflectivity of at least 50% for light incident thereon, wherein the first semiconductor layer is interdisposed between the optical mirror and the light emitting region.

18. A light emitting device according to claim 17, wherein the optical mirror and the light emitting region are configured to give rise to an optical cavity effect therebetween, and wherein the spacing between the optical mirror and the light emitting region is selected to give rise to enhanced coupling of light emission into optical waveguide modes confined in the device and light generated inside the device is at angles substantially outside an escape cone angle of the device.

19. A light emitting device according to claim 1, wherein a surface of at least one mesa side wall of the device is textured so as to enhance light extraction from the device.

20. A light emitting device according to claim 1, further comprising scattering elements disposed in the elongate indentations.

21. A light emitting device according to claim 20, wherein the scattering elements comprise elements selected from colloids, nanospheres, nanorods, macroporous structures, nanoclusters, Silicon Dioxide scatterers, Silicon Nitride scatterers, Titanium Dioxide scatterers and wavelength converting elements.

22. A light emitting device according to claim 4, wherein the elongate indentations in the second plurality of light extracting elements are separated on average by at least a minimum of 1.0 micron from neighboring elongate indentations in the second plurality of light extracting elements.

23. A light emitting device according to claim 4, wherein the second plurality of light extracting elements is defined in a sub-region of the upper surface of the second semiconductor layer, and the second plurality of light extracting elements is substantially repeated in at least one other sub-region of the upper surface of the second semiconductor layer to couple out trapped optical modes residing in the light emitting device.