Semiconductor light emitting device and fabrication method thereof

• US 8,946,760 B2
• Filed: 03/14/2013
• Issued: 02/03/2015
• Est. Priority Date: 04/02/2012
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Yu Seung
• Primary Examiner(s): Rodriguez, Armando
• Assistant Examiner(s): Alam, Mohammed R
• Application Number:
  US13/803,943
• Publication Number:
  US 20130256735A1
• Time in Patent Office: 691 Days
• Field of Search: 257/98, 257/99, 257/81, 257/82, 257/91, 257/100, 257/116, 257/117, 257432-437
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.

Claims

1. A semiconductor light emitting device comprising:

a substrate having first and second electrode patterns on at least one surface thereof;

a light emitting structure on a surface of the substrate and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a first electrode structure electrically connected to the first conductivity-type semiconductor layer;

a second electrode structure electrically connected to the second conductivity-type semiconductor layer, at least a portion of the second electrode structure positioned between the substrate and the light emitting structure, and having an extending portion extending to an outer side surface of the light emitting structure;

an insulating layer between the substrate and the second electrode structure to separate the substrate and the second electrode structure;

a first connection portion electrically connecting the first electrode structure and the first electrode pattern; and

a second connection portion in contact with the extending portion of the second electrode structure and the second electrode pattern of the substrate, respectively, such that the second connection portion forms an electrical connection between the second electrode structure and the second electrode pattern.

2. The semiconductor light emitting device of claim 1, wherein the first electrode structure includes a conductive via penetrating, and insulated from, the second conductivity-type semiconductor layer and the active layer so as to be connected to the first conductivity-type semiconductor layer.

3. The semiconductor light emitting device of claim 2, further comprising an insulator for insulating the conductive via from the second conductivity-type semiconductor layer and the active layer.

4. The semiconductor light emitting device of claim 1, wherein the first electrode structure is positioned between the light emitting structure and the substrate and separated from the substrate by the insulating layer.

5. The semiconductor light emitting device of claim 4, wherein the first electrode structure extends to an outer side surface of the light emitting structure between the light emitting structure and the substrate.

6. The semiconductor light emitting device of claim 5, wherein the first connection portion is in contact with a portion of the first electrode structure extending outwardly from the light emitting structure and the first electrode pattern.

7. The semiconductor light emitting device of claim 1, wherein the first electrode structure is positioned at a surface of the light emitting structure opposite a surface thereof at which the substrate is disposed.

8. The semiconductor light emitting device of claim 7, wherein the first connection portion extends from the first electrode structure to a lateral surface of the light emitting structure so as to be in contact with the first electrode pattern.

9. The semiconductor light emitting device of claim 8, further comprising an insulator for electrically insulating the first connection portion from the second conductivity-type semiconductor layer and the active layer.

10. The semiconductor light emitting device of claim 1, wherein the substrate includes a substrate main body and a first and second vias penetrating the substrate main body in a vertical direction, relative to a horizontal direction of extension of the substrate, wherein the first and second vias are electrically connected to the first and second electrode patterns.

11. The semiconductor light emitting device of claim 10, wherein the substrate further includes lower electrodes electrically connected to the first and second vias on a surface thereof opposite the surface on which the first and second electrode patterns are positioned.

16. The semiconductor light emitting device of claim 1, wherein the second connection portion is disposed on a region of the second electrode pattern of the substrate outside of a region between the light emitting structure and the second electrode pattern of the substrate.

17. The semiconductor light emitting device of claim 1, wherein the insulating layer is disposed between the second electrode pattern of the substrate and the second electrode structure to separate the second electrode pattern and the second electrode structure.

18. The semiconductor light emitting device of claim 1, wherein the second connection portion contacts a top surface of the second electrode structure and a top surface of the second electrode pattern.

12. A light emitting device comprising:

a substrate having an upper surface, the substrate extending in a horizontal direction of extension, the substrate having first and second electrode patterns on the upper surface;

a light emitting structure having a lower layer, an intermediate layer, and an upper layer, the light emitting structure positioned on the substrate in a vertical direction relative to the horizontal direction;

a first electrode structure electrically connected to the lower layer of the light emitting structure;

a second electrode structure electrically connected to the upper layer of the light emitting structure;

an insulating layer positioned between the first electrode structure and the second electrode structure in the horizontal direction and positioned between the light emitting structure and the upper surface of the substrate in the vertical direction, wherein the insulating layer is disposed between the second electrode structure and the second electrode pattern of the substrate such that the second electrode structure and the second electrode pattern are connected in a region outside of a region between the light emitting structure and the substrate;

a first connection portion electrically connecting the first electrode structure and the first electrode pattern; and

a second connection portion electrically connecting the second electrode structure and the second electrode pattern.

13. The light emitting device of claim 12 wherein the insulating layer insulates the first electrode structure from the second electrode structure and wherein the insulating layer bonds the light emitting structure to the substrate.

14. The light emitting device of claim 12 wherein the second electrode structure further comprises a conductive via extending in the vertical direction along, and insulated from, the lower layer and intermediate layer of the light emitting structure.

15. The light emitting device of claim 12 wherein the second electrode structure further extends to an upper surface of the upper layer of the light emitting structure.