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High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications

  • US 8,946,834 B2
  • Filed: 03/01/2012
  • Issued: 02/03/2015
  • Est. Priority Date: 03/01/2012
  • Status: Active Grant
First Claim
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1. A multilayer stack in a magnetic device, comprising:

  • (a) a reference layer;

    (b) a free layer containing at least a layer with a CoRFeSNiWBT composition wherein R, S, W, and T are the content of Co, Fe, Ni, and B respectively, R+S+W+T=100, S>

    (R+W), W is greater than 0 but less than or equal to 2 atomic %, and T is from about 25 to 40 atomic %, and two dusting layers made of Co, Fe, Ni, or alloys thereof that are selected from CoFe, CoTa, CoZr, CoHf, CoMg, CoNb, CoBV or FeBV where v is from 0 to 40 atomic %, a first dusting layer (DL1) contacts a bottom surface of the CoRFeSNiWBT layer and a second dusting layer (DL2) contacts a top surface of the CoRFeSNiWBT layer to give a DL1/CoRFeSNiWBT/DL2 free layer configuration, the free layer maintains perpendicular magnetic anisotropy (PMA) after thermal treatment to above 400°

    C.; and

    (c) a tunnel barrier layer formed between the reference layer and free layer.

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