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Gallium—nitride-on-handle substrate materials and devices and method of manufacture

  • US 8,946,865 B2
  • Filed: 06/11/2014
  • Issued: 02/03/2015
  • Est. Priority Date: 01/24/2011
  • Status: Active Grant
First Claim
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1. A gallium and nitrogen containing device comprising:

  • a gallium and nitrogen containing material, wherein,the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region;

    the first surface region is opposite the second surface region; and

    the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material;

    an interface region overlying the second surface region;

    at least one n-type epitaxial growth region overlying the interface region;

    a core structure extending from the at least one core region through the at least one n-type epitaxial growth region;

    an active region overlying the at least one n-type epitaxial growth region;

    a p-type region overlying the active region;

    a first handle substrate overlying the p-type region, wherein the first handle substrate is transparent, substantially transparent, or reflective; and

    at least one p-contact region overlying the first handle substrate.

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