Gallium—nitride-on-handle substrate materials and devices and method of manufacture

• US 8,946,865 B2
• Filed: 06/11/2014
• Issued: 02/03/2015
• Est. Priority Date: 01/24/2011
• Status: Active Grant

• Current Assignee: SL Technology Incorporated (Reliv' International, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: D'Evelyn, Mark P., Chakraborty, Arpan, Houck, William D.
• Primary Examiner(s): Campbell, Shaun
• Assistant Examiner(s): Gupta, Raj R
• Application Number:
  US14/301,520
• Publication Number:
  US 20140346546A1
• Time in Patent Office: 237 Days
• Field of Search: 257/617
• US Class Current: 257/617
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83193 wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 29/02 Semiconductor bodies ; Multistep manufacturing processes therefor
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 33/007 : comprising nitride compounds
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 : Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements

Abstract

A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

Claims

1. A gallium and nitrogen containing device comprising:

a gallium and nitrogen containing material, wherein,

the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region;

the first surface region is opposite the second surface region; and

the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material;

an interface region overlying the second surface region;

at least one n-type epitaxial growth region overlying the interface region;

a core structure extending from the at least one core region through the at least one n-type epitaxial growth region;

an active region overlying the at least one n-type epitaxial growth region;

a p-type region overlying the active region;

a first handle substrate overlying the p-type region, wherein the first handle substrate is transparent, substantially transparent, or reflective; and

at least one p-contact region overlying the first handle substrate.

2. The device of claim 1, wherein the interface region is characterized by a defect density of less than about 10⁶ cm⁻

2 to 10⁷ cm<sup>−

2</sup> within a matrix region between adjacent core regions.

3. The device of claim 1, wherein the gallium and nitrogen containing material is provided from a dot core substrate.

4. The device of claim 1, wherein the first surface region comprises a patterned, textured, or roughened surface structure.

5. The device of claim 1, wherein,

the at least one core region comprises a plurality of core regions;

and

the plurality of core regions form a square array and a die is approximately square.

6. The device of claim 1, wherein,

the at least one core region comprises a plurality of core regions;

and

the plurality of core regions form a hexagonal array and a die is approximately triangular.

7. The device of claim 1, further comprising:

an adhesion layer overlying the first surface region;

a second handle substrate comprising a first surface region and a second surface region, wherein,

the first surface region of the second handle substrate is opposite the second surface region of the second handle substrate; and

the second surface region of the second handle substrate overlies the adhesion layer; and

at least one n-contact region overlying the first surface region of the second handle substrate.

8. The device of claim 1, further comprising at least one n-contact region overlying the first surface region.

9. The device of claim 1, wherein the first handle substrate comprises at least one through via or partial via.

10. The device of claim 1, wherein the first handle substrate is transparent or substantially transparent and comprises a down-converting light-emitting material.

11. A gallium and nitrogen containing device comprising:

a gallium and nitrogen containing material, wherein,

the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region;

the first surface region is opposite the second surface region; and

the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material;

an interface region overlying the second surface region;

at least one n-type epitaxial growth region overlying the interface region;

a core structure extending from the at least one core region through the at least one n-type epitaxial growth region;

an active region overlying the at least one n-type epitaxial growth region;

a p-type region overlying the active region;

one or more via or street structures providing an electrical barrier between adjacent core regions and a matrix region between the adjacent core regions;

at least one electrical contact region overlying a core region surrounded by a via or street structure; and

at least one handle substrate.

12. The device of claim 11, wherein the interface region is characterized by a defect density of less than about 10⁶ cm⁻

2 to 10⁷ cm<sup>−

2</sup> within the matrix region.

13. The device of claim 11, wherein the gallium and nitrogen containing material is provided from a dot core substrate.

14. The device of claim 11, wherein the first surface region comprises a patterned, textured, or roughened surface structure.

15. The device of claim 11, wherein,

the at least one core region comprises a plurality of core regions;

and

the plurality of core regions form a square array and a die is approximately square.

16. The device of claim 11, wherein,

the at least one core region comprises a plurality of core regions;

and

the plurality of core regions form a hexagonal array and a die is approximately triangular.

17. The device of claim 11, further comprising:

an adhesion layer overlying the first surface region; and

at least one p-contact region overlying the p-type region, wherein,

the at least one handle substrate comprises a first surface region and a second surface region;

the first surface region is opposite the second surface region;

the second surface region overlies the adhesion layer; and

the at least one electrical contact region comprises an n-type contact region.

18. The device of claim 11, further comprising:

at least one n-contact region overlying the first surface region; and

at least one p-contact region overlying the at least one core region; and

wherein the at least one handle substrate comprises a first transparent or reflective handle substrate overlying the at least one p-type region.

19. The device of claim 11, wherein the at least one handle substrate comprises at least one through via or partial via.

20. The device of claim 11, wherein,

the at least one handle substrate is transparent or substantially transparent;

and

the at least one handle substrate comprises a down-converting light-emitting material.