Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
First Claim
1. A method for inspecting a wafer, comprising:
- acquiring images for multiple die printed on a wafer, wherein each of the multiple die is printed by performing a double patterning lithography process on the wafer, and wherein the multiple die comprise two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay;
comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and
detecting defects in the multiple die printed at the modulated values based on results of said comparing, wherein said acquiring, said comparing, and said detecting are performed using a computer system.
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Abstract
Methods for inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer are provided. One method includes acquiring images for multiple die printed on a wafer, each of which is printed by performing a double patterning lithography process on the wafer and which include two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay; comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and detecting defects in the multiple die printed at the modulated values based on results of the comparing step.
22 Citations
37 Claims
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1. A method for inspecting a wafer, comprising:
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acquiring images for multiple die printed on a wafer, wherein each of the multiple die is printed by performing a double patterning lithography process on the wafer, and wherein the multiple die comprise two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay; comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and detecting defects in the multiple die printed at the modulated values based on results of said comparing, wherein said acquiring, said comparing, and said detecting are performed using a computer system. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 29, 36)
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21. A method for predicting one or more characteristics of a device being formed on a wafer, comprising:
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performing metrology on one or more die formed on a wafer using a lithography process; determining overlay errors, focus errors, dose errors, or some combination thereof of the lithography process in the one or more die based on results of the metrology; and simulating one or more characteristics of a device being formed from the one or more die by applying the overlay errors, focus errors, dose errors, or some combination thereof to design data for the one or more die, wherein said determining and said simulating are performed using a computer system. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 30, 31, 32, 33, 34, 35, 37)
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Specification