Vertically oriented semiconductor device and shielding structure thereof

• US 8,951,812 B2
• Filed: 02/19/2014
• Issued: 02/10/2015
• Est. Priority Date: 08/18/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Cho, Hsiu-Ying
• Primary Examiner(s): Tran, Long K
• Assistant Examiner(s): Tran, Dzung
• Application Number:
  US14/184,090
• Publication Number:
  US 20140170777A1
• Time in Patent Office: 356 Days
• Field of Search: 361/777, 257/528, 257/531, 257/659, 438/3
• US Class Current: 438/3
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present disclosure involves a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an electronic device positioned over the substrate. The electronic device includes an opening. The semiconductor device includes a shielding device positioned over the substrate and surrounding the electronic device. The shielding device includes a plurality of elongate members. A subset of the plurality of elongate members extend through the opening of the electronic device. At least one of the electronic device and the shielding device is formed in an interconnect structure positioned over the substrate.

Claims

1. A method, comprising:

forming an electronic device over a substrate, wherein the electronic device is formed to include an opening; and

forming a shielding device over the substrate, wherein the shielding device is formed to surround the electronic device, and wherein the shielding device is formed to include a plurality of elongate members, and wherein a subset of the plurality of elongate members extend through the opening of the electronic device;

wherein;

the electronic device and the shielding device are formed within an interconnect structure that is disposed over the substrate

the interconnect structure includes a plurality of metal layers that each contain a plurality of metal lines that include at least a first metal layer, a second metal layer, and a third metal layer disposed between the first and second metal layers;

the forming of the electronic device is performed such that the electronic device includes first and second components disposed in the first and second metal layers, respectively, wherein the first and second metal layers are separated by the opening; and

the forming of the shielding device is performed such that the subset of the plurality of elongate members is disposed in the third metal layer.

2. The method of claim 1, wherein the forming of the electronic device comprises forming a coil that defines the opening of the electronic device, wherein the coil is formed to have a winding orientation that is substantially perpendicular to a surface of the substrate over which the electronic device is formed.

3. The method of claim 2, wherein the forming of the coil is performed such that the coil extends in a direction substantially perpendicular to a direction in which the plurality of elongate members of the shielding device extend.

4. The method of claim 1, wherein the forming of the shielding device is performed such that the plurality of elongate members extend substantially parallel to one another.

5. The method of claim 1, wherein the forming of the electronic device is performed such that the electronic device includes a transformer having a primary coil and a secondary coil that are each wound in a plane that is substantially orthogonal to a surface of the substrate.

6. The method of claim 5, wherein the forming of the shielding device is performed such that the subset of the shielding device extend through the primary coil and the secondary coil.

7. The method of claim 1, wherein the forming of the electronic device is performed such that the electronic device includes an inductor capacitor (LC) tank that contains a vertically wound inductor coil and an interdigitated capacitor.

8. A method, comprising:

providing a substrate having a surface that is defined by a first axis and a second axis that is substantially perpendicular to the first axis; and

forming an interconnect structure over the surface of the substrate, the interconnect structure having a plurality of conductive lines interconnected by a plurality of vias, wherein the forming of the interconnect structure includes forming;

a transformer device as a part of the interconnect structure, wherein the transformer device is formed to include a first coil and a second coil that each have a winding direction that is defined at least in part by a third axis that is substantially perpendicular to the surface of the substrate; and

forming a shielding structure as a part of the interconnect structure, wherein the shielding structure is formed to at least partially surround the transformer device, wherein the forming of the shielding structure is performed such that the shielding structure includes a plurality of elongate strip lines, and at least one of the plurality of elongate strip lines is disposed within an opening defined by the first or second coils of the transformer device.

9. The method of claim 8, wherein the forming of the shielding structure is performed such that:

the first coil and the second coil each include a respective elongate segment that extends along the first axis; and

at least one of the plurality of elongate strip lines extends along the second axis.

10. The method of claim 8, wherein the forming of the transformer device is performed such that the first coil and the second coil have different lateral dimensions.

11. The method of claim 10, wherein the forming of the transformer device is performed such that the lateral dimension of the first coil and the lateral dimension of the second coil are different by at least a factor of two.

12. A method of fabricating a semiconductor device, comprising:

providing a substrate;

forming an electronic device over the substrate, the electronic device including a first member and a second member that is spaced apart from the first member; and

forming a shielding structure that surrounds the electronic device, the shielding structure including a plurality of elongate strip lines;

wherein at least a subset of the plurality of elongate strip lines is disposed between the first member and the second member of the electronic device.

13. The method of claim 12, wherein the forming the electronic device and the forming the shielding structure are carried out in a manner such that the electronic device and the shielding structure are portions of an interconnect structure formed over the substrate.

14. The method of claim 13, wherein the interconnect structure includes a plurality of metal layers, and wherein the first and second members of the electronic device are disposed in metal layers above and below a metal layer in which the subset of the plurality of elongate strip lines is disposed, respectively.

15. The method of claim 12, wherein the forming the electronic device and the forming the shielding structure are carried out in a manner such that the plurality of elongate strip lines are substantially perpendicular to the first and second members of the electronic device.

16. The method of claim 12, wherein the forming the electronic device includes forming a coil having a winding orientation that is substantially perpendicular to the substrate.