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Circuit board, semiconductor device, and method of manufacturing semiconductor device

  • US 8,952,271 B2
  • Filed: 12/13/2013
  • Issued: 02/10/2015
  • Est. Priority Date: 10/05/2007
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising steps of:

  • forming a first electrode on a first base; and

    forming a solder ball composed of lead free solder on the first electrode, wherein the step of forming the first electrode comprises steps of;

    forming a first layer containing copper as a main component on the first base;

    forming a second layer containing nickel as a main component on the first layer;

    forming a third layer containing tin as a main component on the second layer; and

    forming an alloy layer of the second layer and the third layer by a heat treatment after the step of forming the third layer;

    wherein an alloy of tin, nickel, and copper is formed between the solder ball and the first electrode by the step of the solder ball; and

    the further comprising a step of connecting the solder ball to a circuit board;

    wherein the circuit board comprising;

    a second base; and

    a second electrode formed on the second base, wherein the second electrode comprising;

    a fifth layer containing copper as a main component and formed on the second base;

    a sixth layer containing nickel as a main component and formed on the fifth layer; and

    a seventh layer containing an alloy of tin and nickel as a main component and formed on the sixth layer.

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