Method of manufacturing semiconductor device
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a source electrode and a drain electrode over the gate insulating film; and
forming an oxide semiconductor film over the gate insulating film, the source electrode and the drain electrode by chemical vapor deposition; and
forming a highly purified oxide semiconductor by irradiating the oxide semiconductor film with a microwave having a frequency greater than or equal to 300 MHz and less than or equal to 3 THz under an inert gas atmosphere or reduced pressure, or in air where a dew point under atmospheric pressure is −
60°
C. or lower to give energy to a polar molecule included in the oxide semiconductor film, so that the polar molecule is evaporated,wherein the highly purified oxide semiconductor is overlapped with the gate electrode,wherein the highly purified oxide semiconductor is partly overlapped with the source electrode and the drain electrode, andwherein the highly purified oxide semiconductor is an intrinsic semiconductor or a substantially intrinsic semiconductor.
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Abstract
An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with an electromagnetic wave such as a microwave or a high frequency; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.
127 Citations
17 Claims
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a source electrode and a drain electrode over the gate insulating film; and forming an oxide semiconductor film over the gate insulating film, the source electrode and the drain electrode by chemical vapor deposition; and forming a highly purified oxide semiconductor by irradiating the oxide semiconductor film with a microwave having a frequency greater than or equal to 300 MHz and less than or equal to 3 THz under an inert gas atmosphere or reduced pressure, or in air where a dew point under atmospheric pressure is −
60°
C. or lower to give energy to a polar molecule included in the oxide semiconductor film, so that the polar molecule is evaporated,wherein the highly purified oxide semiconductor is overlapped with the gate electrode, wherein the highly purified oxide semiconductor is partly overlapped with the source electrode and the drain electrode, and wherein the highly purified oxide semiconductor is an intrinsic semiconductor or a substantially intrinsic semiconductor.
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2. A semiconductor device comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; a source electrode and a drain electrode over the gate insulating film; and an oxide semiconductor film over the gate insulating film, the source electrode and the drain electrode, wherein the oxide semiconductor film is overlapped with the gate electrode, wherein the oxide semiconductor film is partly overlapped with the source electrode and the drain electrode, wherein the oxide semiconductor film comprises a highly purified oxide semiconductor, wherein the highly purified oxide semiconductor is an intrinsic semiconductor or a substantially intrinsic semiconductor, and wherein concentration of hydrogen in the highly purified oxide semiconductor measured by secondary ion mass spectrometry is less than 5×
1019/cm3. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; a first oxide semiconductor film over the gate insulating film; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode over the second oxide semiconductor film; and wherein the first oxide semiconductor film is overlapped with the gate electrode, wherein the first oxide semiconductor film is partly overlapped with the source electrode and the drain electrode, wherein the first oxide semiconductor film comprises a highly purified oxide semiconductor, wherein the highly purified oxide semiconductor is an intrinsic semiconductor or a substantially intrinsic semiconductor, and wherein concentration of hydrogen in the highly purified oxide semiconductor measured by secondary ion mass spectrometry is less than 5×
1019/cm3. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsMiyanaga, Akiharu
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Primary Examiner(s)Garber, Charles
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Assistant Examiner(s)ISAAC, STANETTA D
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Application NumberUS13/570,517Publication NumberTime in Patent Office915 DaysField of Search438/104, 438/149US Class Current257/43CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/04 characterised by their crys...H01L 29/66742 Thin film unipolar transistorsH01L 29/66969 of devices having semicondu...H01L 29/7869 having a semiconductor body...
