Thin film transistor array substrate and method for manufacturing the same
First Claim
1. A method for manufacturing a thin film transistor array substrate, comprising:
- a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate;
a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and
a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process.
1 Assignment
0 Petitions
Accused Products
Abstract
According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device. The method for manufacturing the TFT array substrate includes: a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process.
-
Citations
12 Claims
-
1. A method for manufacturing a thin film transistor array substrate, comprising:
-
a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A thin film transistor array substrate, comprising:
-
a transparent substrate; a pixel electrode, which is provided on the transparent substrate and formed by a first transparent conductive layer; a source electrode, a drain electrode and a data line, which are provided on the pixel electrode and formed by a first metal layer; an active layer, which is provided on the transparent substrate and formed by a transparent oxide layer; a gate insulating layer, which is provided on the active layer; a common electrode, which is provided on the gate insulating layer and formed by a second transparent conductive layer; and a gate electrode and a gate line, which are provided on the common electrode and formed by a second metal layer. - View Dependent Claims (12)
-
Specification