Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer

• US 8,952,401 B2
• Filed: 08/29/2011
• Issued: 02/10/2015
• Est. Priority Date: 05/16/2011
• Status: Active Grant

• Current Assignee: Alpad Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugiyama, Naoharu, Sato, Taisuke, Ono, Hiroshi, Mitsugi, Satoshi, Shioda, Tomonari, Hwang, Jongil, Hung, Hung, Nunoue, Shinya
• Primary Examiner(s): Slutsker, Julia
• Application Number:
  US13/220,059
• Publication Number:
  US 20120292649A1
• Time in Patent Office: 1,261 Days
• Field of Search: 257/94, 257/97, 257/103, 257/E33.034, 257/E33.016
• US Class Current: 257/94
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02494 Structure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/0265 Pendeoepitaxy
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.

Claims

1. A semiconductor light emitting device, comprising:

a first semiconductor layer having a first major surface and a second major surface opposite to the first major surface, the first major surface forming a light extraction face, the first major surface having a rough surface including a convex part and a concave part, and the first semiconductor layer made of a nitride semiconductor crystal;

a light emitting layer having an active layer and provided on the second major surface;

a second semiconductor layer provided on the light emitting layer; and

a low refractive index layer in contact with the concave part, the low refractive index layer not covering the convex part, the low refractive index layer made of a nitride semiconductor crystal, and the low refractive index layer having a refractive index lower than the refractive index of the first semiconductor layer,

wherein;

the nitride semiconductor crystal of the low refractive index layer comprises Al with a first composition ratio of Al to Group III elements, and the nitride semiconductor crystal of the first semiconductor layer comprises Al with a second composition ratio of Al to Group III elements lower than the first composition ratio, or

the nitride semiconductor crystal of the low refractive index layer comprises Al, and the nitride semiconductor crystal of the first semiconductor layer does not comprise Al;

the low refractive index layer has a first face and a second face, the first face being arranged between the second face and the light emitting layer; and

a distance between the second face and the light emitting layer is larger than a distance between the convex part and the light emitting layer.

2. The device according to claim 1, further comprising a transparent conductive film covering the convex part and the second face.

4. The device according to claim 1, wherein a lattice of the low refractive index layer is continuous with a lattice of the first semiconductor layer.

5. The device according to claim 1, wherein the concave part is epitaxially grown on the low refractive index layer starting from the low refractive index layer so that the first semiconductor layer is formed as an integrated film.

9. The device according to claim 1, wherein the convex part and the concave part are made of the same nitride semiconductor crystal.

10. The device according to claim 1, wherein the first semiconductor layer is made of an n-type GaN, and the low refractive index layer is made of AlGaN.

11. The device according to claim 1, wherein at least a part of a light emitted from the light emitting layer is extracted outside the device through at least one of the light extraction face and the low refractive index layer.

3. A semiconductor light emitting device comprising:

a first semiconductor layer having a first major surface and a second major surface opposite to the first major surface, the first major surface forming a light extraction face, the first major surface having a rough surface including a convex part and a concave part, and the first semiconductor layer made of a nitride semiconductor crystal;

a light emitting layer having an active layer and provided on the second major surface;

a second semiconductor layer provided on the light emitting layer;

a low refractive index layer in contact with the concave part, the low refractive index layer not covering the convex part, the low refractive index layer made of a nitride semiconductor crystal, and the low refractive index layer having a refractive index lower than the refractive index of the first semiconductor layer; and

a transparent conductive film provided such that the first semiconductor layer and the low refractive index layer are positioned between the transparent conductive film and the light emitting layer,

wherein;

the nitride semiconductor crystal of the low refractive index layer comprises Al with a first composition ratio of Al to Group III elements, and the nitride semiconductor crystal of the first semiconductor layer comprises Al with a second composition ratio of Al to Group III elements lower than the first composition ratio, or

the nitride semiconductor crystal of the low refractive index layer comprises Al, and the nitride semiconductor crystal of the first semiconductor layer does not comprise Al;

the low refractive index layer has a first face and a second face, the first face being arranged between the second face and the light emitting layer; and

a distance between the second face and the light emitting layer is not less than a distance between the convex part and the light emitting layer.

6. A wafer, comprising:

a substrate;

a semiconductor layer having a first major surface and a second major surface opposite to the first major surface, the first major surface having a rough surface including a convex part and a concave part, and the semiconductor layer made of a nitride semiconductor crystal; and

a low refractive index layer in contact with the concave part, the low refractive index layer not covering the convex part, the low refractive index layer made of a nitride semiconductor crystal, and the low refractive index layer having a refractive index lower than the refractive index of the semiconductor layer,

wherein;

the nitride semiconductor crystal of the low refractive index layer comprises Al with a first composition ratio of Al to Group III elements, and the nitride semiconductor crystal of the semiconductor layer comprises Al with a second composition ratio of Al to Group III elements lower than the first composition ratio, or

the nitride semiconductor crystal of the low refractive index layer comprises Al, and the nitride semiconductor crystal of the semiconductor layer does not comprise Al;

the low refractive index layer has a first face and a second face, the first face being arranged between the second face and the second major surface; and

a distance between the second face and the second major surface is larger than a distance between the convex part and the second major surface.

7. The wafer according to claim 6, wherein the concave part is epitaxially grown on the low refractive index layer starting from the low refractive index layer so that the semiconductor layer is formed as an integrated film.

8. The wafer according to claim 6, wherein a lattice of the low refractive index layer is continuous with a lattice of the semiconductor layer.

12. The wafer according to claim 6, wherein a composition of the convex part is same as a composition of the concave part.

13. The wafer according to claim 6, wherein the first semiconductor layer is made of an n-type GaN, and the low refractive index layer is made of AlGaN.

14. A semiconductor light emitting device, comprising:

a first semiconductor layer having a first major surface and a second major surface opposite to the first major surface, the first major surface forming a light extraction face, the first major surface having a rough surface including a convex part and a concave part, and the first semiconductor layer made of a nitride semiconductor crystal;

a light emitting layer having an active layer and provided on the second major surface;

a second semiconductor layer provided on the light emitting layer; and

a low refractive index layer in contact with the concave part, the low refractive index layer not covering the convex part, the low refractive index layer made of a nitride semiconductor crystal, and the low refractive index layer having a refractive index lower than the refractive index of the first semiconductor layer,

wherein;

the nitride semiconductor crystal of the low refractive index layer comprises Al with a first composition ratio of Al to Group III elements, and the nitride semiconductor crystal of the first semiconductor layer comprises Al with a second composition ratio of Al to Group III elements lower than the first composition ratio, or

the nitride semiconductor crystal of the low refractive index layer comprises Al, and the nitride semiconductor crystal of the first semiconductor layer does not comprise Al;

the low refractive index layer has a pillar shape having a first face and a second face, the first face being arranged between the second face and the light emitting layer; and

a distance between the second face and the light emitting layer is larger than a distance between the convex part and the light emitting layer.

15. A semiconductor light emitting device, comprising:

a first semiconductor layer having a first major surface and a second major surface opposite to the first major surface, the first major surface forming a light extraction face, the first major surface having a rough surface including a convex part and a concave part, and the first semiconductor layer made of a nitride semiconductor crystal;

a light emitting layer having an active layer and provided on the second major surface;

a second semiconductor layer provided on the light emitting layer; and

a low refractive index layer in contact with the concave part, the low refractive index layer not covering the convex part, the low refractive index layer made of a nitride semiconductor crystal, and the low refractive index layer having a refractive index lower than the refractive index of the first semiconductor layer,

wherein;

the nitride semiconductor crystal of the low refractive index layer comprises Al and Ga with a first composition ratio of Al to Ga, and the nitride semiconductor crystal of the first semiconductor layer comprises Al and Ga with a second composition ratio of Al to Ga lower than the first composition ratio, or

the nitride semiconductor crystal of the low refractive index layer comprises Al and Ga, and the nitride semiconductor crystal of the first semiconductor layer does not comprise Al;

the low refractive index layer has a first face and a second face, the first face being arranged between the second face and the light emitting layer; and

a distance between the second face and the light emitting layer is larger than a distance between the convex part and the light emitting layer.