Systems, methods, and apparatus for memory cells with common source lines
First Claim
1. A method comprising:
- receiving a first voltage at a first transistor, the first transistor being coupled to a second transistor, the first transistor and second transistor being included in a first memory cell;
receiving a second voltage at a third transistor, the third transistor being coupled to a fourth transistor, the third transistor and fourth transistor being included in a second memory cell, the first memory cell and the second memory cell being coupled to a common source line;
receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor; and
receiving a fourth voltage at a gate of the first transistor, the fourth voltage causing, via Fowler-Nordheim tunneling, a change in one or more electrical properties of a charge storage layer included in the first transistor.
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Accused Products
Abstract
Systems, methods, and apparatus are disclosed for implementing memory cells having common source lines. The methods may include receiving a first voltage at a first transistor. The first transistor may be coupled to a second transistor and included in a first memory cell. The methods include receiving a second voltage at a third transistor. The third transistor may be coupled to a fourth transistor and included in a second memory cell. The first and second memory cells may be coupled to a common source line. The methods include receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor that may cause them to operate in cutoff mode. The methods may include receiving a fourth voltage at a gate of the first transistor. The fourth voltage may cause, via Fowler-Nordheim tunneling, a change in a charge storage layer included in the first transistor.
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Citations
20 Claims
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1. A method comprising:
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receiving a first voltage at a first transistor, the first transistor being coupled to a second transistor, the first transistor and second transistor being included in a first memory cell; receiving a second voltage at a third transistor, the third transistor being coupled to a fourth transistor, the third transistor and fourth transistor being included in a second memory cell, the first memory cell and the second memory cell being coupled to a common source line; receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor; and receiving a fourth voltage at a gate of the first transistor, the fourth voltage causing, via Fowler-Nordheim tunneling, a change in one or more electrical properties of a charge storage layer included in the first transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A device comprising:
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a first transistor configured to receive a first voltage via a first bit line; a second transistor coupled to the first transistor and a common source line; a third transistor configured to receive a second voltage via a second bit line; and a fourth transistor coupled to the third transistor and the common source line, wherein the first transistor includes a charge storage layer configured to change one or more electrical properties via Fowler-Nordheim tunneling in response to receiving the first voltage and a fourth voltage, the fourth voltage being received at a gate of the first transistor. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A system comprising:
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voltage control circuitry configured to generate a first voltage, a second voltage, a third voltage, and a fourth voltage; a memory device coupled to the voltage source, the memory device including at least a first memory cell and a second memory cell coupled to a common source line, the first memory cell including a first transistor coupled to a second transistor, the second memory cell including a third transistor coupled to a fourth transistor, and wherein in response to an initiation of a programming operation, the memory device is configured to; receive the first voltage at the first transistor; receive the second voltage at the third transistor; receive the third voltage at a gate of the second transistor and a gate of the fourth transistor; and receive the fourth voltage at a gate of the first transistor, the fourth voltage causing, via Fowler-Nordheim tunneling, a change in one or more electrical properties of a charge storage layer included in the first transistor. - View Dependent Claims (18, 19, 20)
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Specification