Source-mask optimization for a lithography process

• US 8,954,898 B2
• Filed: 03/15/2013
• Issued: 02/10/2015
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Inoue, Tadanobu, Melville, David O., Rosenbluth, Alan E., Sakamoto, Masaharu, Tian, Kehan
• Primary Examiner(s): Parihar, Suchin
• Application Number:
  US13/836,327
• Publication Number:
  US 20140282291A1
• Time in Patent Office: 697 Days
• Field of Search: 716/100, 716/55, 716/52
• US Class Current: 716/52
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

Systems and methods for optimizing a source shape and a mask shape for a lithography process are disclosed. One such method includes performing a mask optimization for the lithography process in accordance with a set of parameters including at least one variable representation, at least one objective and problem constraints. Further, a light source optimization for the lithography process is performed in accordance with the set of parameters. In addition, a joint light source-mask optimization is performed in accordance with the set of parameters. The method further includes iterating at least one of the mask optimization or the light source optimization by changing at least one of the variable representation, the objective or the problem constraints to maximize a common process window for the lithography process.

Claims

1. A method for optimizing a source shape and a mask shape for a lithography process comprising:

performing a mask optimization for the lithography process in accordance with a set of parameter including at least one variable representation, at least one objective and problem constraints;

performing a light source optimization for the lithography process in accordance with the set of parameters;

performing a joint light source-mask optimization in accordance with the set of parameters; and

iterating, by a hardware processor, at least one of said mask optimization or said light source optimization by changing at least one of the variable representation, the objective or-the problem constraints to maximize a common process window for the lithography process, wherein the iterating evolves the at least one objective, wherein the iterating is repeated such that at least one initial stage of iteration maximizes a weakest window and wherein the common process window is maximized in a last stage of iteration.

2. The method of claim 1, wherein the changing comprises adding or restricting the problem constraints.

3. The method of claim 2, wherein at least one of the problem constraints includes a pupil fill constraint.

4. The method of claim 1, wherein the performing the mask optimization, the performing the light source optimization, the performing the joint light source-mask optimization, and the iterating are implemented in a frequency domain.

5. The method of claim 4, further comprising:

performing a spatial optimization.

6. The method of claim 5, wherein the performing the optimization further comprises changing the variable representation to a polygon-domain representation.

7. The method of claim 6, wherein the method further comprises:

iterating a spatial joint source-mask optimization to remove fragments of the polygon-domain representation deemed to have low optical effect.

8. The method of claim 7, wherein the iterating of the spatial optimization comprises an initial stage that utilizes a manufacturability rule check.

9. The method of claim 5, wherein the problem constraints comprise mask blank constraints assessed during said spatial optimization in said frequency domain.

10. A system for optimizing a source shape and a mask shape for a lithography process comprising:

a mask optimization module configured to perform a mask optimization for the lithography process in accordance with a set of parameters including at least one variable representation, at least one objective and problem constraints;

a source optimization module configured to perform a light source optimization for the lithography process in accordance with the set of parameters, wherein iterations of at least one of said mask optimization or said light source optimization maximizes a weakest window during initial stages of the iterations and wherein the common process window is maximized in a last stage of the iterations;

a joint source-mask optimization module configured to perform a joint light source-mask optimization in accordance with the set of parameters; and

a controller implemented by a hardware processor and configured to direct at least one of the mask optimization module or the source optimization module to iterate at least one of said mask optimization or said light source optimization by changing at least one of the variable representation, the objective or the problem constraints to maximize a common process window for the lithography process.

11. The method of claim 10, wherein the changing comprises adding or restricting the problem constraints.

12. The method of claim 11, wherein at least one of the problem constraints includes a pupil fill constraint.

13. The method of claim 10, further comprising:

a spatial optimization module configured to perform a spatial optimization.

14. The method of claim 13, wherein the spatial optimization comprises changing the variable representation to a polygon-domain representation.

15. The method of claim 14, the spatial optimization module is further configured to iterate a spatial joint source-mask optimization to remove fragments of the polygon-domain representation deemed to have low optical effect.

16. The method of claim 14, the spatial optimization module is further configured to utilize a manufacturability rule check in an initial stage of iteration.