White light devices using non-polar or semipolar gallium containing materials and phosphors

• US 8,956,894 B2
• Filed: 09/24/2013
• Issued: 02/17/2015
• Est. Priority Date: 08/04/2008
• Status: Active Grant

• Current Assignee: SL Technology Incorporated (Reliv' International, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: Raring, James W., Hall, Eric M., D'Evelyn, Mark P.
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US14/035,693
• Publication Number:
  US 20140213001A1
• Time in Patent Office: 511 Days
• Field of Search: 438/27, 257/13, 257/E33.06, 257/E33.061
• US Class Current: 438/27
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01021 Scandium [Sc]
• CPC Class Codes: H01L 2924/01025 Manganese [Mn]
• CPC Class Codes: H01L 2924/01037 Rubidium [Rb]
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01063 Europium [Eu]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements

Abstract

A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Claims

1. A method for fabricating a light emitting diode device comprising:

providing a substrate member comprising a first surface region;

providing one or more light emitting diode devices overlying the first surface region, at least one of the light emitting diode devices being fabricated on a semipolar or nonpolar GaN containing device substrate, the device substrate comprising a bulk gallium nitride substrate, the at least one or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing device substrate emitting substantially polarized emission of one or more first wavelengths;

coupling an optically transparent member to the one or more light emitting diode devices such that an optical path is provided between the one or more light emitting diode devices and the optically transparent member; and

forming a thickness of one or more entities formed within a vicinity of the optically transparent member, one or more of the entities being excited by the substantially polarized emission to emit electromagnetic radiation at one or more second wavelengths;

wherein the bulk gallium nitride substrate has a dislocation density in the plane of the large-area surface that is less than 5×

10⁶ cm<sup>−

2</sup>.

2. The method of claim 1, wherein at least one of the light emitting diode devices comprises a quantum well region, the quantum well region being characterized by an electron wave function and a hole wave function, the electron wave function and the hole wave function being substantially overlapped within a predetermined spatial region of the quantum well region.

3. The method of claim 1, wherein the thickness of the one or more entities is formed overlying a first side of the optically transparent member, the first side facing the one or more of the light emitting diode devices.

4. The method of claim 1, wherein the one or more light emitting diode devices comprise at least a blue LED device, the substantially polarized emission being blue light.

5. The method of claim 1, wherein the one or more light emitting diode devices comprise at least a blue LED device capable of emitting electromagnetic radiation at a wavelength range from about 430 nanometers to about 490 nanometers, the substantially polarized emission being blue light.

6. The method of claim 1, wherein the one or more light emitting diode devices comprise at least a blue LED device capable of emitting electromagnetic radiation at a range from about 430 nanometers to about 490 nanometers and the one or more entities is capable of emitting substantially yellow light, the substantially polarized emission being blue light.

7. The method of claim 6, wherein the one or more entities comprises a phosphor or phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu, La)₃(Al, Ga, In)₅O₁₂:

Ce³⁺, SrGa₂S₄;

Eu²⁺, SrS;

Eu²⁺, and colloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe.

8. The method of claim 6, further comprising a phosphor capable of emitting substantially red light, wherein the phosphor is selected from one or more of the group consisting of (Gd,Y,Lu,La)₂O₃:

Eu³⁺, Bi³⁺;

(Gd,Y,Lu,La)₂O₂S;

Eu³⁺, Bi³⁺;

(Gd,Y,Lu,La)VO₄;

Eu³⁺, Bi³⁺;

Y₂(O,S)₃;

Eu³⁺;

Ca_1-xMo_1-ySi_yO₄;

where 0.05≦

x≦

0.5, 0≦

y≦

0.1;

(Li,Na,K)₅Eu(W,Mo)O₄;

(Ca,Sr)S;

Eu²⁺;

SrY₂S₄;

Eu²⁺;

CaLa₂S₄;

Ce³⁺;

(Ca,Sr)S;

Eu²⁺;

3.5MgO*0.5MgF₂*GeO₂;

Mn⁴⁺ (MFG);

(Ba,Sr,Ca)Mg_xP₂O₇;

Eu²⁺, Mn²⁺;

(Y,Lu)₂WO₆;

Eu³⁺, Mo⁶⁺;

(Ba,Sr,Ca)₃Mg_xSi₂O₈;

Eu²⁺, Mn²⁺, wherein 1<

x≦

2;

(RE_1-yCe_y)Mg_2-xLi_xSi_3-xPxO₁₂, where RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<

x<

0.1 and 0.001<

y<

0.1;

(Y, Gd, Lu, La)_2-xEu_xW_1-yMo_yO₆, where 0.5≦

x.≦

1.0, 0.01≦

y≦

1.0;

(SrCa)_1-xEu_xSi₅N₈, where 0.01≦

x≦

0.3;

SrZnO₂;

Sm⁺³;

M_mO_nX, wherein M is selected from the group of Sc, Y, a lanthanide, an alkali earth metal and mixtures thereof;

X is a halogen;

1≦

m≦

3; and

1≦

n≦

4, and wherein the lanthanide doping level can range from 0.1 to 40% spectral weight; and

Eu³⁺ activated phosphate or borate phosphors; and

mixtures thereof.

9. The method of claim 1, wherein the one or more light emitting diode devices comprise at least a violet LED device capable of emitting electromagnetic radiation at a range from about 380 nanometers to about 440 nanometers and the one or more entities are capable of emitting substantially white light, the substantially polarized emission being violet light.

10. The method of claim 1, wherein the one or more entities comprise a blend of wavelength converting materials capable of emitting substantially blue light, substantially green light, and substantially red light.

11. The method of claim 10, wherein the wavelength converting material capable of emitting substantially blue light comprises a blue phosphor selected from the group consisting of (Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):

Eu²⁺, Mn²⁺;

Sb³⁺, (Ba,Sr,Ca)MgAl₁₀O₁₇;

Eu²⁺, Mn²⁺;

(Ba,Sr,Ca)BPO₅;

Eu²⁺, Mn²⁺;

(Sr,Ca)₁₀(PO₄)₆*nB₂O₃;

Eu²⁺;

2SrO*0.84P₂O5*0.16B₂O₃;

Eu²⁺;

Sr₂Si₃O₈*2SrCl₂;

Eu²⁺;

(Ba,Sr,Ca)Mg_xP₂O₇;

Eu²⁺, Mn²⁺;

Sr₄Al₁₄O₂₅;

Eu²⁺ (SAE);

BaAl₈O₁₃;

Eu²⁺; and

mixtures thereof.

12. The method of claim 10, wherein the wavelength converting material capable of emitting substantially green light comprises a green phosphor selected from the group consisting of (Ba,Sr,Ca)MgAl₁₀O₁₇:

Eu²⁺, Mn²⁺ (BAMn);

(Ba,Sr,Ca)Al₂O₄;

Eu²⁺;

(Y,Gd,Lu,Sc,La)BO₃;

Ce³⁺,Tb³⁺;

Ca₈Mg(SiO₄)₄Cl₂;

Eu²⁺, Mn²⁺;

(Ba,Sr,Ca)₂SiO₄;

Eu²⁺;

(Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇;

Eu²⁺;

(Sr,Ca,Ba)(Al,Ga,In)₂S₄;

Eu²⁺;

(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂;

Ce³⁺;

(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂;

Eu²⁺, Mn²⁺ (CASI);

Na₂Gd₂B₂O₇;

Ce³⁺, Tb³⁺;

(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆;

K,Ce,Tb; and

mixtures thereof.

13. The method of claim 10, wherein the wavelength converting material capable of emitting substantially red light comprises a red phosphor selected from the group consisting of (Gd,Y,Lu,La)₂O₃:

Eu³⁺, Bi³⁺;

(Gd,Y,Lu,La)₂O₂S;

Eu³⁺, Bi³⁺;

(Gd,Y,Lu,La)VO₄;

Eu³⁺, Bi³⁺;

Y₂(O,S)₃;

Eu³⁺;

Ca_1-xMo_1-ySiO₄;

where 0.05≦

x≦

0.5, 0≦

y≦

0.1;

(Li,Na,K)₅Eu(W,Mo)O₄;

(Ca,Sr)S;

Eu²⁺;

SrY₂S₄;

Eu²⁺;

CaLa₂S₄;

Ce³⁺;

(Ca,Sr)S;

Eu²⁺;

3.5MgO*0.5MgF₂*GeO₂;

Mn⁴⁺ (MFG);

(Ba,Sr,Ca)Mg_xP₂O₇;

Eu^2′

, Mn²⁺;

(Y,Lu)₂WO₆;

Eu³⁺, Mo⁶⁺;

(Ba,Sr,Ca)₃Mg_xSi₂O₈;

Eu²⁺, Mn²⁺, wherein 1<

x≦

2;

(RE_1-yCe_y)Mg_2-xLi_xSi_3-xP_xO₁₂, where RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<

x<

0.1 and 0.001<

y<

0.1;

(Y, Gd, Lu, La)_2-xEu_xW_1-yMo_yO₆, where 0.5≦

x.≦

1.0, 0.01≦

y≦

1.0;

(SrCa)_1-xEu_xSi₅N₈, where 0.01≦

x≦

0.3;

SrZnO₂;

Sm⁺³;

M_mO_nX, wherein M is selected from the group of Sc, Y, a lanthanide, an alkali earth metal and mixtures thereof;

X is a halogen;

1≦

m≦

3; and

1≦

n≦

4, and wherein the lanthanide doping level can range from 0.1 to 40% spectral weight; and

Eu³⁺ activated phosphate or borate phosphors; and

mixtures thereof.

14. The method of claim 1, wherein the one or more entities is a plurality of wavelength converting entities selected from a red emitting wavelength converting material, a green emitting wavelength converting material, a blue emitting wavelength converting material, and a yellow emitting wavelength converting material.

15. The method of claim 1, wherein the thickness of the one or more entities is provided by at least one of electrophoretic deposition, plating, sputtering, spraying, dipping, and dispensing.

16. The method of claim 1, wherein the one or more light emitting diode devices comprise two light emitting devices.

17. The method of claim 1, wherein the bulk gallium nitride substrate was formed by slicing from a boule that was grown by hydride vapor epitaxy or ammonothermally.

18. The method of claim 1, wherein the thickness of the one or more entities is formed overlying the one or more light emitting diode devices.

19. The method of claim 1, further comprising an enclosure, wherein the enclosure has a shape chosen from among annular, circular, egg-shaped, trapezoidal, or a combination thereof.

20. The method of claim 1, wherein the device is packaged and is coupled to a rectifier.

21. The method of claim 1, further comprising a diffuser optically coupled to the one or more light emitting diode devices, the diffuser comprising at least one of TiO₂, CaF₂, SiO₂, CaCO₃, and BaSO₄.

22. A method for manufacturing a light emitting device comprising:

providing a substrate member having a first surface;

providing at least one light emitting diode overlying the first surface emitting a substantially polarized emission of first wavelengths, the at least one light emitting diode comprising a device substrate comprising a semipolar or nonpolar bulk gallium nitride substrate;

coupling an optically transparent member to the at least one light emitting diode such that an optical path is formed between the at least one light emitting diode and the optically transparent member; and

forming a blend of phosphors coupled to the optical transparent member, the blend of phosphors configured to be excited by the substantially polarized emission of first wavelengths to thereby emit electromagnetic radiation at second wavelengths;

wherein the substantially polarized emission of first wavelengths comprises blue light and the blend of phosphors emits electromagnetic radiation at second wavelengths comprising yellow and red.

23. A method of using a light emitting device comprising:

providing a substrate member having a first surface, at least one light emitting diode overlying the first surface emitting a substantially polarized emission of first wavelengths, the at least one light emitting diode comprising a device substrate comprising a semipolar or nonpolar bulk gallium nitride substrate, an optically transparent member coupled to the at least one light emitting diode, an optical path between the at least one light emitting diode and the optically transparent member; and

a blend of phosphors optically coupled to the at least one light emitting diode; and

subjecting the blend of phosphors to the substantially polarized emission of first wavelengths to thereby emit electromagnetic radiation at second wavelengths;

wherein the substantially polarized emission of first wavelengths comprises violet light and the blend of phosphors emits electromagnetic radiation at second wavelengths comprising blue, green, and red.

24. A method for using a light emitting device comprising:

providing a substrate member having a first surface, at least one light emitting diode overlying the first surface emitting a substantially polarized emission of first wavelengths, the at least one light emitting diode comprising a device substrate comprising a semipolar or nonpolar bulk gallium nitride substrate, an optically transparent member coupled to the at least one light emitting diode, an optical path between the at least one light emitting diode and the optically transparent member; and

a blend of phosphors optically coupled to the at least one light emitting diode; and

subjecting the blend of phosphors to the substantially polarized emission of first wavelengths to thereby emit electromagnetic radiation at second wavelengths;

wherein the substantially polarized emission of first wavelengths comprises blue light and the blend of phosphors emits electromagnetic radiation at second wavelengths comprising green and red.

25. A method of fabricating a light emitting device comprising:

providing a substrate member comprising a first surface region;

providing one or more light emitting diode devices overlying the first surface region, at least one of the light emitting diode devices being fabricated on a semipolar or nonpolar GaN containing device substrate, the device substrate comprising a bulk gallium nitride substrate, the at least one or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing device substrate emitting substantially polarized emission of one or more first wavelengths; and

coupling an optically transparent member to the one or more light emitting diode devices such that an optical path is provided between the one or more light emitting diode devices and the optically transparent member and such that a thickness of one or more entities is formed within a vicinity of the optically transparent member, one or more of the entities being excited by the substantially polarized emission to emit electromagnetic radiation at one or more second wavelengths;

wherein a crystallographic orientation of the device substrate is within ±

5 degrees of the {1 −

1 0 0} m plane, the {1 1 −

2 0} a plane, the {1 1 −

2 2} plane, the {2 0 −

2±

1} plane, the {1 −

1 0±

1} plane, the {1 −

1 0 −

±

2} plane, or the {1 −

1 0±

3} plane.

26. The method of claim 25, wherein at least one of the light emitting diode devices comprises a quantum well region, the quantum well region being characterized by an electron wave function and a hole wave function, the electron wave function and the hole wave function being substantially overlapped within a predetermined spatial region of the quantum well region.

27. The method of claim 25, wherein the thickness of the one or more entities is formed overlying a first side of the optically transparent member, the first side facing the one or more of the light emitting diode devices.

28. The method of claim 25, wherein the one or more light emitting diode devices comprise at least a blue LED device, the substantially polarized emission being blue light.

29. The method of claim 25, wherein the one or more light emitting diode devices comprise at least a blue LED device capable of emitting electromagnetic radiation at a wavelength range from about 430 nanometers to about 490 nanometers, the substantially polarized emission being blue light.

30. The method of claim 25, wherein the one or more light emitting diode devices comprise at least a blue LED device capable of emitting electromagnetic radiation at a range from about 430 nanometers to about 490 nanometers and the one or more entities is capable of emitting substantially yellow light, the substantially polarized emission being blue light.

31. The method of claim 30, wherein the one or more entities comprises a phosphor or phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu, La)₃(Al, Ga, In)₅O₁₂:

Ce³⁺, SrGa₂S₄;

Eu²⁺, SrS;

Eu²⁺, and colloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe.

32. The method of claim 30, further comprising a phosphor capable of emitting substantially red light, wherein the phosphor is selected from one or more of the group consisting of (Gd,Y,Lu,La)₂O₃:

Eu³⁺, Bi³⁺;

(Gd,Y,Lu,La)₂O₂S;

Eu³⁺, Bi³⁺;

(Gd,Y,Lu,La)VO₄;

Eu³⁺, Bi³⁺;

Y₂(O,S)₃;

Eu³⁺;

Ca_1-xMo_1-ySi_yO₄;

where 0.05≦

x≦

0.5, 0≦

y≦

0.1;

(Li,Na,K)₅Eu(W,Mo)O₄;

(Ca,Sr)S;

Eu²⁺;

SrY₂S₄;

Eu²⁺;

CaLa₂S₄;

Ce³⁺;

(Ca,Sr)S;

Eu²⁺;

3.5MgO*0.5MgF₂*GeO₂;

Mn⁴⁺ (MFG);

(Ba,Sr,Ca)Mg_xP₂O₇;

Eu²⁺, Mn²⁺;

(Y,Lu)₂WO₆;

Eu³⁺, Mo⁶⁺;

(Ba,Sr,Ca)₃Mg_xSi₂O₈;

Eu²⁺, Mn²⁺, wherein 1<

x≦

2;

(RE_1-yCe_y)Mg_2-xLi_xSi_3-xPxO₁₂, where RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<

x<

0.1 and 0.001<

y<

0.1;

(Y, Gd, Lu, La)_2-xEu_xW_1-yMo_yO₆, where 0.5≦

x.≦

1.0, 0.01≦

y≦

1.0;

(SrCa)_1-xEu_xSi₅N₈, where 0.01≦

x≦

0.3;

SrZnO₂;

Sm⁺³;

M_mO_nX, wherein M is selected from the group of Sc, Y, a lanthanide, an alkali earth metal and mixtures thereof;

X is a halogen;

1≦

m≦

3; and

1≦

n≦

4, and wherein the lanthanide doping level can range from 0.1 to 40% spectral weight; and

Eu³⁺ activated phosphate or borate phosphors; and

mixtures thereof.

33. The method of claim 25, wherein the one or more light emitting diode devices comprise at least a violet LED device capable of emitting electromagnetic radiation at a range from about 380 nanometers to about 440 nanometers and the one or more entities are capable of emitting substantially white light, the substantially polarized emission being violet light.

34. The method of claim 25, wherein the one or more entities comprise a blend of wavelength converting materials capable of emitting substantially blue light, substantially green light, and substantially red light.

35. The method of claim 34, wherein the wavelength converting material capable of emitting substantially blue light comprises a blue phosphor selected from the group consisting of (Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):

Eu²⁺, Mn²⁺;

Sb³⁺, (Ba,Sr,Ca)MgAl₁₀O₁₇;

Eu²⁺, Mn²⁺;

(Ba,Sr,Ca)BPO₅;

Eu²⁺, Mn²⁺;

(Sr,Ca)₁₀(PO₄)₆*nB₂O₃;

Eu²⁺;

2SrO*0.84P₂O5*0.16B₂O₃;

Eu²⁺;

Sr₂Si₃O₈*2SrCl₂;

Eu²⁺;

(Ba,Sr,Ca)Mg_xP₂O₇;

Eu²⁺, Mn²⁺;

Sr₄Al₁₄O₂₅;

Eu²⁺ (SAE);

BaAl₈O₁₃;

Eu²⁺; and

mixtures thereof.

36. The method of claim 34, wherein the wavelength converting material capable of emitting substantially green light comprises a green phosphor selected from the group consisting of (Ba,Sr,Ca)MgAl₁₀O₁₇:

Eu²⁺, Mn²⁺ (BAMn);

(Ba,Sr,Ca)Al₂O₄;

Eu²⁺;

(Y,Gd,Lu,Sc,La)BO₃;

Ce³⁺,Tb³⁺;

Ca₈Mg(SiO₄)₄Cl₂;

Eu²⁺, Mn²⁺;

(Ba,Sr,Ca)₂SiO₄;

Eu²⁺;

(Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇;

Eu²⁺;

(Sr,Ca,Ba)(Al,Ga,In)₂S₄;

Eu²⁺;

(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂;

Ce³⁺;

(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂;

Eu²⁺, Mn²⁺ (CASI);

Na₂Gd₂B₂O₇;

Ce³⁺, Tb³⁺;

(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆;

K,Ce,Tb; and

mixtures thereof.

37. The method of claim 34, wherein the wavelength converting material capable of emitting substantially red light comprises a red phosphor selected from the group consisting of (Gd,Y,Lu,La)₂O₃:

Eu³⁺, Bi³⁺;

(Gd,Y,Lu,La)₂O₂S;

Eu³⁺, Bi³⁺;

(Gd,Y,Lu,La)VO₄;

Eu³⁺, Bi³⁺;

Y₂(O,S)₃;

Eu³⁺;

Ca_1-xMo_1-ySi_yO₄;

where 0.05≦

x≦

0.5, 0≦

y≦

0.1;

(Li,Na,K)₅Eu(W,Mo)O₄;

(Ca,Sr)S;

Eu²⁺;

SrY₂S₄;

Eu²⁺;

CaLa₂S₄;

Ce³⁺;

(Ca,Sr)S;

Eu²⁺;

3.5MgO*0.5MgF₂*GeO₂;

Mn⁴⁺ (MFG);

(Ba,Sr,Ca)Mg_xP₂O₇;

Eu²⁺, Mn²⁺;

(Y,Lu)₂WO₆;

Eu³⁺, Mo⁶⁺;

(Ba,Sr,Ca)₃Mg_xSi₂O₈;

Eu²⁺, Mn²⁺, wherein 1<

x≦

2;

(RE_1-yCe_y)Mg_2-xLi_xSi_3-xP_xO₁₂, where RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<

x<

0.1 and 0.001<

y<

0.1;

(Y, Gd, Lu, La)_2-xEu_xW_1-yMo_yO₆, where 0.5≦

x.≦

1.0, 0.01≦

y≦

1.0;

(SrCa)_1-xEu_xSi₅N₈, where 0.01≦

x≦

0.3;

SrZnO₂;

Sm⁺³;

M_mO_nX, wherein M is selected from the group of Sc, Y, a lanthanide, an alkali earth metal and mixtures thereof;

X is a halogen;

1≦

m≦

3; and

1≦

n≦

4, and wherein the lanthanide doping level can range from 0.1 to 40% spectral weight; and

Eu³⁺ activated phosphate or borate phosphors; and

mixtures thereof.

38. The method of claim 25, wherein the one or more entities is a plurality of wavelength converting entities selected from a red emitting wavelength converting material, a green emitting wavelength converting material, a blue emitting wavelength converting material, and a yellow emitting wavelength converting material.

39. The method of claim 25, wherein the thickness of the one or more entities is provided by at least one of electrophoretic deposition, plating, sputtering, spraying, dipping, and dispensing.

40. The method of claim 25, wherein the one or more light emitting diode devices comprise two light emitting devices.

41. The method of claim 25, wherein the bulk gallium nitride substrate was formed by slicing from a boule that was grown by hydride vapor epitaxy or ammonothermally.

42. The method of claim 25, wherein the thickness of the one or more entities is formed overlying the one or more light emitting diode devices.

43. The method of claim 25, further comprising an enclosure, wherein the enclosure has a shape chosen from among annular, circular, egg-shaped, trapezoidal, or a combination thereof.

44. The method of claim 25, wherein the light emitting device is packaged and is coupled to a rectifier.

45. The method of claim 25, further comprising a diffuser optically coupled to the one or more light emitting diode devices, the diffuser comprising at least one of TiO₂, CaF₂, SiO₂, CaCO₃, and BaSO₄.