Method for producing an optoelectronic component and optoelectronic component
First Claim
1. A method for producing an optoelectronic component, the method comprising:
- providing a silicon-based growth substrate having a first coefficient of thermal expansion;
applying a multilayered nitride-containing buffer layer sequence;
epitaxially depositing a layer sequence, the layer sequence having a second coefficient of thermal expansion, that differs from the first coefficient of thermal expansion, and that further comprises an active layer suitable for emitting electromagnetic radiation;
forming contacts in the epitaxially deposited layer sequence;
forming a mirror layer on that side of the layer sequence that is remote from the multilayered nitride-containing buffer layer sequence;
forming an insulating material on the mirror layer, the mirror layer being completely surrounded by said insulating material;
applying a carrier substrate on the epitaxially deposited layer sequence provided with contacts;
removing the growth substrate;
structuring the multilayered buffer layer sequence in order to increase a coupling-out of electromagnetic radiation; and
making contact with the epitaxially deposited layer sequence.
2 Assignments
0 Petitions
Accused Products
Abstract
In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
19 Citations
17 Claims
-
1. A method for producing an optoelectronic component, the method comprising:
-
providing a silicon-based growth substrate having a first coefficient of thermal expansion; applying a multilayered nitride-containing buffer layer sequence; epitaxially depositing a layer sequence, the layer sequence having a second coefficient of thermal expansion, that differs from the first coefficient of thermal expansion, and that further comprises an active layer suitable for emitting electromagnetic radiation; forming contacts in the epitaxially deposited layer sequence; forming a mirror layer on that side of the layer sequence that is remote from the multilayered nitride-containing buffer layer sequence; forming an insulating material on the mirror layer, the mirror layer being completely surrounded by said insulating material; applying a carrier substrate on the epitaxially deposited layer sequence provided with contacts; removing the growth substrate; structuring the multilayered buffer layer sequence in order to increase a coupling-out of electromagnetic radiation; and making contact with the epitaxially deposited layer sequence. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
Specification