Semiconductor device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a base film over a substrate;
forming an oxide semiconductor film over the base film;
performing a heat treatment so as to release hydrogen from the oxide semiconductor film;
forming a pair of electrodes over and in contact with at least a part of the oxide semiconductor film;
forming a gate insulating film over the oxide semiconductor film; and
forming a gate electrode over the oxide semiconductor film with the gate insulating film provided therebetween,wherein the base film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order,wherein the hydrogen capture film comprises an oxynitride film containing indium, andwherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.
1 Assignment
0 Petitions
Accused Products
Abstract
In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.
130 Citations
16 Claims
-
1. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a base film over a substrate; forming an oxide semiconductor film over the base film; performing a heat treatment so as to release hydrogen from the oxide semiconductor film; forming a pair of electrodes over and in contact with at least a part of the oxide semiconductor film; forming a gate insulating film over the oxide semiconductor film; and forming a gate electrode over the oxide semiconductor film with the gate insulating film provided therebetween, wherein the base film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order, wherein the hydrogen capture film comprises an oxynitride film containing indium, and wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a first insulating film over a substrate; forming an oxide semiconductor film over the first insulating film; forming a pair of electrodes over and in contact with at least part of the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film and the pair of electrodes; and performing a heat treatment, wherein one of the first insulating film and the second insulating film comprises a third insulating film and a fourth insulating film which are stacked, the third insulating film being adjacent to the oxide semiconductor film, wherein hydrogen is transferred from the oxide semiconductor film to the fourth insulating film through the third insulating film by the heat treatment, wherein the hydrogen is captured by the fourth insulating film, and wherein the fourth insulating film comprises an oxynitride film containing indium. - View Dependent Claims (11, 12, 13, 14, 15, 16)
-
Specification