Light emitting devices with low packaging factor
First Claim
1. A light emitting diode die comprising:
- a metal overlay;
a composite high reflectivity mirror comprising a plurality of alternating stacked layers of SiO2 and at least one of TiO2 and Ta2O5 on the metal overlay;
a submount connected to the metal overlay by a bond metal;
a transparent conductive oxide layer on the composite high reflectivity mirror;
a diode structure on the transparent conductive oxide layer; and
an overmolded hemispherical lens,wherein the metal overlay, the composite high reflectivity mirror, the transparent conductive oxide layer are arranged such that the light emitting diode die is configured to exhibit a total power of light output divided by total power extracted from the light emitting diode die without the overmolded hemispherical lens that is less than 1.2.
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Accused Products
Abstract
A light emitting diode die that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2. The light emitting diode die may include a stacked structure including a metal overlay, a composite high reflectivity mirror on the metal overlay, a transparent conductive oxide layer on the composite high reflectivity mirror, and a diode structure on the transparent conductive oxide layer. The diode structure may include a roughened surface opposite the transparent conductive oxide layer, a submount connected to the composite high reflectivity mirror and a bond metal between the submount and the metal overlay. A conductive via may extend through the composite high reflectivity mirror and electrically connect the transparent conductive oxide and the bond metal.
41 Citations
20 Claims
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1. A light emitting diode die comprising:
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a metal overlay; a composite high reflectivity mirror comprising a plurality of alternating stacked layers of SiO2 and at least one of TiO2 and Ta2O5 on the metal overlay; a submount connected to the metal overlay by a bond metal; a transparent conductive oxide layer on the composite high reflectivity mirror; a diode structure on the transparent conductive oxide layer; and an overmolded hemispherical lens, wherein the metal overlay, the composite high reflectivity mirror, the transparent conductive oxide layer are arranged such that the light emitting diode die is configured to exhibit a total power of light output divided by total power extracted from the light emitting diode die without the overmolded hemispherical lens that is less than 1.2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A light emitting diode package comprising:
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a submount; a light emitting diode on the submount; and an encapsulant dome on the light emitting diode; wherein the light emitting diode package comprises a metal overlay, a composite high reflectivity mirror comprising a layer of Al2O3 on an outermost layer of SiO2 opposite the light emitting diode and a transparent conductive oxide layer with respective thicknesses selected such that the light emitting diode die is configured to exhibit a total power of light output divided by total power extracted from the light emitting diode without the encapsulant dome that is less than 1.2.
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17. A light emitting diode die comprising:
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a submount; a metal overlay connected to the submount comprising at least one of a layer of silver and a layer of tin, wherein the metal overlay is attached to the submount by a bond metal of at least one of gold and tin; a composite high reflectivity mirror on the metal overlay comprising; a plurality of alternating stacked layers of SiO2 and at least one of TiO2 and Ta2O5, wherein the plurality of alternating stacked layers have different thicknesses; and a layer of Al2O3 on an outermost layer of SiO2 opposite the diode structure; a transparent conductive oxide layer on the composite high reflectivity mirror; a diode structure comprising a GaN-based quantum well active region between a p-type AlInGaN region and an n-type AlInGaN region on the transparent conductive oxide layer; and an overmolded hemispherical lens over at least the composite high reflectivity mirror and the diode structure, wherein the Al2O3 layer, the layers of SiO2 and the layers of the at least one of Ta2O5 and TiO2 are configured with respective thicknesses to reflect light from the diode structure having a wavelength between 460 nm and 600 nm in an amount and pattern such that the overmolded hemispherical lens increases a total power of light output from the light emitting diode die by less than 20%. - View Dependent Claims (18, 19, 20)
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Specification