Multi-etch process using material-specific behavioral parameters in 3-D virtual fabrication environment

• US 8,959,464 B2
• Filed: 03/14/2013
• Issued: 02/17/2015
• Est. Priority Date: 03/14/2013
• Status: Active Grant

• Current Assignee: Coventor, Inc. (Lam Research Corporation)
• Original Assignee: Coventor, Inc. (Lam Research Corporation)
• Inventors: Greiner, Kenneth B., Faken, Daniel, Fried, David M., Breit, Stephen R.
• Primary Examiner(s): Do, Thuan
• Assistant Examiner(s): Alam, Mohammed
• Application Number:
  US13/831,450
• Publication Number:
  US 20140282302A1
• Time in Patent Office: 705 Days
• Field of Search: 716/54
• US Class Current: 716/54
• CPC Class Codes: G06F 2119/18 Manufacturability analysis or optimisation for manufacturability
• CPC Class Codes: G06F 30/20 Design optimisation, verification or simulation optimisation, verification or simulation of circuit designs G06F30/30
• CPC Class Codes: G06F 30/30 Circuit design
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00

Abstract

A virtual fabrication environment for semiconductor device structure development is discussed. The insertion of a multi-etch process step using material-specific behavioral parameters into a process sequence enables a multi-physics, multi-material etching process to be simulated using a suitable numerical technique. The multi-etch process step accurately and realistically captures a wide range of etch behavior and geometry to provide in a virtual fabrication system a semi-physical approach to modeling multi-material etches based on a small set of input parameters that characterize the etch behavior.

Claims

1. A non-transitory computer-readable medium holding computer-executable instructions for modeling plasma etches on a 3D structural model of a semiconductor device, the instructions when executed causing the computing device to:

receive, for a semiconductor structure to be virtually fabricated in a computing-device generated virtual fabrication environment, a selection of 2D design data and a process sequence that includes a plurality of processes;

receive a set of material-specific behavioral parameters for a plurality of types of etch behavior to be respectively applied to a plurality of etchable materials in at least one etch process in the process sequence, each material-specific behavioral parameter being a behavioral parameter for a type of etch behavior for an indicated one of the plurality of ecthable materials, at least one of the types of etch behavior being taper behavior, the taper behavior caused by a combination of directional etching and polymer deposition;

perform with the computing device a virtual fabrication run for the structure using the process sequence and 2D design data, the virtual fabrication run building a 3D structural model containing the plurality of etchable materials and an etchable surface including one or more etchable materials, the virtual fabrication run using the material-specific behavioral parameters to simulate the etch process by evolving the etchable surface during the virtual fabrication run.

2. The medium of claim 1 wherein the set of material specific behavioral parameters for the taper behavior includes a taper angle parameter describing a critical angle at which deposition and etching are balanced.

3. The medium of claim 1 wherein the set of material-specific behavioral parameters includes a lateral ratio parameter used to control an etch bias or rate of lateral etching.

4. The medium of claim 3 wherein directional ion shadowing is modeled and the set of material-specific behavioral parameters includes a parameter describing an angular distribution of incident ions.

5. The medium of claim 1 wherein directional ion shadowing is modeled and the set of material-specific behavioral parameters includes a parameter describing an angular distribution of incident ions.

6. The medium of claim 1 wherein one of the types of etch behavior is sputter etching that removes material through a bombardment by energetic ions and the set of material specific behavioral parameters for the sputter behavior includes an angle of maximum yield parameter and a rate of sputter relative to a rate of vertical etching.

7. The medium of claim 6 wherein directional ion shadowing is modeled and the set of material-specific behavioral parameters includes a parameter describing an angular distribution of incident ions.

8. The medium of claim 6 wherein the set of material-specific behavioral parameters includes a lateral ratio parameter used to control an etch bias or rate of lateral etching.

9. The medium of claim 8 wherein directional ion shadowing is modeled and the set of material-specific behavioral parameters includes a parameter describing an angular distribution of incident ions.

10. The medium of claim 1 wherein the set of material-specific behavioral parameters includes an etch ratio parameter for each material, determining the relative etch rates of the etchable materials.

11. The medium of claim 1 wherein the virtual fabrication engine uses a time-dependent surface evolution algorithm to perform the etch process.

12. The medium of claim 1 wherein one of the plurality of types of etch behavior is isotropic behavior caused by chemical etching that removes material at a similar rate in all directions and the set of material specific behavioral parameters for the isotropic behavior includes a lateral ratio parameter controlling a ratio between a lateral and vertical etch rate.

13. A computing device-implemented method for modeling plasma etches on a 3D model of a semiconductor device, comprising:

receiving, for a semiconductor structure to be virtually fabricated in a computing-device generated virtual fabrication environment, a selection of 2D design data and a process sequence that includes a plurality of processes;

receiving a set of material-specific behavioral parameters for a plurality of types of etch behavior to be respectively applied to a plurality of etchable materials in at least one etch process in the process sequence, each material-specific behavioral parameter being a behavioral parameter for a type of etch behavior for an indicated one of the plurality of ecthable materials, at least one of the types of etch behavior being taper behavior, the taper behavior caused by a combination of directional etching and polymer deposition; and

performing with the computing device a virtual fabrication run for the structure using the process sequence and 2D design data, the virtual fabrication run building a 3D structural model containing the plurality of etchable materials and an etchable surface including one or more etchable materials, the virtual fabrication run using the material-specific behavioral parameters to simulate the etch process by evolving the etchable surface during the virtual fabrication run.

14. The method of claim 13 wherein the set of material specific behavioral parameters for the taper behavior includes a taper angle parameter describing a critical angle at which deposition and etching are balanced.

15. The method of claim 13 wherein the set of material-specific behavioral parameters includes a lateral ratio parameter used to control an etch bias or rate of lateral etching.

16. The method of claim 13 wherein directional ion shadowing is modeled and the set of material-specific behavioral parameters includes a parameter describing an angular distribution of incident ions.

17. The method of claim 13 wherein one of the types of etch behavior is sputter etching that removes material through a bombardment by energetic ions and the set of material specific behavioral parameters for the sputter behavior includes an angle of maximum yield parameter and a rate of sputter relative to a rate of vertical etching.

18. The method of claim 17 wherein directional ion shadowing is modeled and the set of material-specific behavioral parameters includes a parameter describing an angular distribution of incident ions.

19. The method of claim 17 wherein the set of material-specific behavioral parameters includes a lateral ratio parameter used to control an etch bias or rate of lateral etching.

20. The method of claim 13 wherein the set of material-specific behavioral parameters includes an etch ratio parameter for each material, determining the relative etch rates of the etchable materials.

21. The method of claim 13 wherein the virtual fabrication engine uses a time-dependent surface evolution algorithm to perform the etch process.

22. The method of claim 13 wherein one of the plurality of types of etch behavior is isotropic behavior caused by chemical etching that removes material at a similar rate in all directions and the set of material specific behavioral parameters for the isotropic behavior includes a lateral ratio parameter controlling a ratio between a lateral and vertical etch rate.

23. A virtual fabrication system, comprising:

a computing device equipped with a processor and configured to receive input data with a 3D modeling engine, the input data including 2D design data and a process sequence for a semiconductor device structure to be virtually fabricated in a computing-device generated virtual fabrication environment, the input data further including a set of material-specific behavioral parameters for a plurality of types of etch behavior to be respectively applied to a plurality of etchable materials in at least one etch process in the process sequence, each material-specific behavioral parameter being a behavioral parameter for a type of etch behavior for an indicated one of the plurality of ecthable materials, at least one of the types of etch behavior being taper behavior, the taper behavior caused by a combination of directional etching and polymer deposition; and

a display surface in communication with the computing device and displaying the results of a virtual fabrication run conducted by the computing device to build the structure using the process sequence and 2D design data, the virtual fabrication run using the material-specific behavioral parameters to simulate the etch process by evolving the etchable surface during the virtual fabrication run.

24. The virtual fabrication system of claim 23 wherein the display surface displays a 3D view of a 3D structural model generated during the virtual fabrication run.

25. The virtual fabrication system of claim 23 wherein a plurality of virtual fabrication runs that build a plurality of 3D structural models in a virtual experiment are performed using a set of parameter variations for the process sequence or the 2D design data.