Photon extraction from nitride ultraviolet light-emitting devices

• US 8,962,359 B2
• Filed: 07/19/2012
• Issued: 02/24/2015
• Est. Priority Date: 07/19/2011
• Status: Active Grant

• Current Assignee: Crystal IS, Inc. (Asahi Kasei Corporation)
• Original Assignee: Crystal IS, Inc. (Asahi Kasei Corporation)
• Inventors: Schowalter, Leo J., Chen, Jianfeng, Grandusky, James R.
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US13/553,093
• Publication Number:
  US 20140203311A1
• Time in Patent Office: 950 Days
• Field of Search: 438/22, 438/27, 438/25, 438/26, 257/98, 257/88, 257/E33.059
• US Class Current: 438/27
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Claims

1. A method of forming an illumination device, the method comprising:

providing a layer of non-rigid encapsulant between a surface of an ultraviolet (UV) light-emitting semiconductor die and a surface of a rigid lens opposing the surface of the semiconductor die; and

with the encapsulant, attaching the rigid lens to the semiconductor die via application of a force sufficient to minimize a thickness of the encapsulant between the rigid lens and the semiconductor die,

wherein, after attachment of the rigid lens, the thickness of the encapsulant is insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

2. The method of claim 1, wherein, after attachment of the rigid lens, the thickness of the encapsulant is approximately 10 μ

m or less.

3. The method of claim 1, wherein the semiconductor die emits light having a wavelength less than 300 nm.

4. The method of claim 1, wherein a transmittance of the encapsulant decreases by at least 10% after at least 1000 hours of exposure to UV light.

5. The method of claim 1, wherein a transmittance of the rigid lens decreases by 1% or less after at least 10,000 hours of exposure to UV light.

6. The method of claim 1, wherein the encapsulant is organic.

7. The method of claim 1, wherein the encapsulant comprises silicone.

8. The method of claim 1, wherein the rigid lens is at least partially hemispherical.

9. The method of claim 8, wherein the rigid lens is substantially hemispherical.

10. The method of claim 8, wherein the rigid lens has a substantially hemispherical portion and a substantially cylindrical portion disposed thereunder.

11. The method of claim 1, wherein the rigid lens is inorganic.

12. The method of claim 1, wherein the rigid lens comprises at least one of fused silica, quartz, or sapphire.

13. The method of claim 1, wherein, prior to the provision of the layer of the encapsulant, the surface of the semiconductor die is at least one of roughened, textured, or patterned.

14. The method of claim 1, wherein, for light having a wavelength of approximately 260 nm, an index of refraction of the rigid lens is approximately 1.5 and an index of refraction of the encapsulant is approximately 1.4.

15. The method of claim 1, wherein the semiconductor die is a light-emitting diode die.

16. The method of claim 1, wherein the semiconductor die is a laser die.

17. The method of claim 1, further comprising at least partially curing the encapsulant after applying the rigid lens.

18. The method of claim 1, wherein a diameter of the rigid lens is at least twice an edge length or diameter of the semiconductor die.