Diode energy converter for chemical kinetic electron energy transfer
First Claim
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1. An energy converter that converts vibrational energy of a vibrationally energized species into a useful form of energy, comprising:
- a substrate;
a first semiconductor layer on the substrate;
a second semiconductor layer on the first semiconductor layer, the first semiconductor layer and the second semiconductor layer forming a p-n junction;
a tailoring layer on the second semiconductor layer, the tailoring layer comprising one or more ballistic charge carrier materials;
an ohmic contact conductor on the tailoring layer, the ohmic contact conductor material comprising one or more ballistic charge carrier materials, wherein the tailoring layer and the ohmic contact make a stable ohmic contact to the second semiconductor layer;
a stabilizing interlayer conductor on the ohmic contact conductor material, the stabilizing interlayer conductor physically isolating chemical reactants from the semiconductor layer and acting as a barrier against chemical transport, the stabilizing interlayer conductor comprising one or more ballistic charge carrier materials; and
a conducting catalyst surface on the stabilizing interlayer conductor, the conducting surface being formed from one or more nanostructures in contact with a region having at least some vibrationally energized species.
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Abstract
An improved diode energy converter for chemical kinetic electron energy transfer is formed using nanostructures and includes identifiable regions associated with chemical reactions isolated chemically from other regions in the converter, a region associated with an area that forms energy barriers of the desired height, a region associated with tailoring the boundary between semiconductor material and metal materials so that the junction does not tear apart, and a region associated with removing heat from the semiconductor.
2 Citations
20 Claims
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1. An energy converter that converts vibrational energy of a vibrationally energized species into a useful form of energy, comprising:
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a substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer, the first semiconductor layer and the second semiconductor layer forming a p-n junction; a tailoring layer on the second semiconductor layer, the tailoring layer comprising one or more ballistic charge carrier materials; an ohmic contact conductor on the tailoring layer, the ohmic contact conductor material comprising one or more ballistic charge carrier materials, wherein the tailoring layer and the ohmic contact make a stable ohmic contact to the second semiconductor layer; a stabilizing interlayer conductor on the ohmic contact conductor material, the stabilizing interlayer conductor physically isolating chemical reactants from the semiconductor layer and acting as a barrier against chemical transport, the stabilizing interlayer conductor comprising one or more ballistic charge carrier materials; and a conducting catalyst surface on the stabilizing interlayer conductor, the conducting surface being formed from one or more nanostructures in contact with a region having at least some vibrationally energized species. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An energy converter for converting vibrational energy of a vibrationally energized species into a useful form of energy, comprising:
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a substrate; a semiconductor layer on the substrate; a tailoring layer on the semiconductor layer, wherein the tailoring layer comprises one or more ballistic charge carrier materials; a Schottky conductor on the tailoring layer, wherein the Schottky conductor comprises one or more ballistic charge carrier materials, wherein the tailoring layer is disposed between the Schottky conductor and the semiconductor layer, and wherein the Schottky conductor and the semiconductor layer form a Schottky diode; a stabilizing interlayer conducting surface comprised of one or more conductors and conducting catalysts on the Schottky conductor, wherein the stabilizing interlayer conducting surface physically isolates chemical reactants from the semiconductor layer and acts as a barrier against chemical transport, the stabilizing interlayer conducting surface comprising one or more ballistic charge carrier materials; a conducting catalyst surface on the stabilizing interlayer conductor, the conducting surface being formed from one or more nanostructures in contact with a region having at least some vibrationally energized species; and wherein the tailoring layer stabilizes mechanical and materials junctions between the Schottky conductor and the semiconductor layer, thereby preventing tearing of the Schottky conductor from the semiconductor layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification