Light emitting diode chip having distributed bragg reflector and method of fabricating the same
First Claim
1. A light emitting diode chip, comprising:
- a substrate comprising a first surface and a second surface;
a light emitting structure arranged on the first surface of the substrate, the light emitting structure comprising an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer;
a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure; and
a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector comprises a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and wherein the distributed Bragg reflector comprises a reflectivity of 98% or more at an incident angle of 0°
for light of all wavelengths in a full wavelength range of 400 nm to 700 nm.
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Accused Products
Abstract
Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
36 Citations
11 Claims
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1. A light emitting diode chip, comprising:
a substrate comprising a first surface and a second surface;
a light emitting structure arranged on the first surface of the substrate, the light emitting structure comprising an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer;
a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure; and
a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector comprises a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and wherein the distributed Bragg reflector comprises a reflectivity of 98% or more at an incident angle of 0°
for light of all wavelengths in a full wavelength range of 400 nm to 700 nm.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
Specification