Light emitting device and light emitting device package

• US 8,963,179 B2
• Filed: 02/23/2011
• Issued: 02/24/2015
• Est. Priority Date: 03/09/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Kwang Ki, Jeong, Hwan Hee, Lee, Sang Youl, Song, June O, Moon, Ji Hyung
• Primary Examiner(s): Mondt, Johannes P
• Application Number:
  US13/033,264
• Publication Number:
  US 20110220944A1
• Time in Patent Office: 1,462 Days
• Field of Search: None
• US Class Current: 257/98
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21W 2131/103 of streets or roads
• CPC Class Codes: F21Y 2105/10 comprising a two-dimensional array of point-like light-generating elements
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.

Claims

1. A light emitting device comprising:

a substrate;

a light emitting structure on the substrate and including a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer;

a first electrode electrically connected to the first semiconductor layer;

a nano-tube layer on the second semiconductor layer;

a current blocking layer between the second semiconductor layer and the nano-tube layer; and

a second electrode on the nano-tube layer,

wherein the nano-tube layer includes a through-hole,

wherein a portion of the second electrode is disposed in the through-hole,

wherein a portion of the nano-tube layer is disposed between the current blocking layer and the second electrode,

wherein the portion of the nano-tube layer disposed between the current blocking layer and the second electrode contacts a top surface of the current blocking layer, and

wherein the second electrode contacts a portion of the current blocking layer and the portion of the nano-tube layer.

2. The light emitting device of claim 1, wherein the current blocking layer is disposed in the through-hole.

3. The light emitting device of claim 1, wherein the top surface of the current blocking layer is higher than a bottom surface of the nano-tube layer.

4. The light emitting device of claim 1, further comprising a passivation layer that surrounds the light emitting structure.

5. The light emitting device of claim 4, wherein the passivation layer is formed on an outer peripheral portion of the lateral surface of the first conductive semiconductor layer.

6. The light emitting device of claim 5, wherein the passivation layer is formed on an outer peripheral portion of the lateral surface of the active layer.

7. The light emitting device of claim 6, wherein the passivation layer is formed on an outer peripheral portion of the second conductive semiconductor layer.

8. The light emitting device of claim 7, wherein the passivation layer is formed on a top surface of the second conductive semiconductor layer.

9. The light emitting device of claim 1, wherein the nano-tube layer has a refractive index lower than a refractive index of the light emitting structure.

10. The light emitting device of claim 1, further comprising a roughness structure disposed on the second conductive semiconductor.

11. The light emitting device of claim 1, wherein the current blocking layer has a size greater than an area of a bottom of the second electrode.

12. The light emitting device package including the light emitting device of claim 1, and further including a package body provided to house the light emitting device.

13. A lighting system including a light emitting module portion including the light emitting device package of claim 12.