Trench-based power semiconductor devices with increased breakdown voltage characteristics
First Claim
1. A semiconductor device, comprising:
- at least a first device region and a second device region disposed at a surface of a semiconductor region, the second device region being adjacent to the first device region and spaced apart from the first device region;
a connection region disposed between the first device region and the second device region;
a trench extending into the semiconductor region and at least extending from the first device region, through the connection region, and to the second device region;
a dielectric layer lining opposing sidewalls of the trench;
an electrode disposed in the trench; and
a conductive trace disposed over a portion of the trench in the connection region and electrically coupled to a portion of the electrode disposed in the connection region.
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Accused Products
Abstract
In one general aspsect, a semiconductor device can include at least a first device region and a second device region disposed at a surface of a semiconductor region where the second device region is adjacent to the first device region and spaced apart from the first device region. That semiconductor device can include a connection region disposed between the first device region and the second device region, and a trench extending into the semiconductor region and at least extending from the first device region, through the connection region, and to the second device region. The semiconductor device can include a dielectric layer lining opposing sidewalls of the trench, an electrode disposed in the trench, and a conductive trace disposed over a portion of the trench in the connection region and electrically coupled to a portion of the electrode disposed in the connection region.
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Citations
23 Claims
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1. A semiconductor device, comprising:
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at least a first device region and a second device region disposed at a surface of a semiconductor region, the second device region being adjacent to the first device region and spaced apart from the first device region; a connection region disposed between the first device region and the second device region; a trench extending into the semiconductor region and at least extending from the first device region, through the connection region, and to the second device region; a dielectric layer lining opposing sidewalls of the trench; an electrode disposed in the trench; and a conductive trace disposed over a portion of the trench in the connection region and electrically coupled to a portion of the electrode disposed in the connection region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a plurality of trenches extending into a semiconductor region, a trench from the plurality of trenches having a first end, a second end, and opposing sidewalls lined with a dielectric layer, the trench further including a shield electrode and a gate electrode vertically stacked above and insulated from the shield electrode; and a conductive shield trace disposed over the semiconductor region and aligned orthogonal to the trench, the conductive trace having a length running adjacent to the first end of the trench and a width that does not extend over the first end of the trench, the conductive shield trace in electrical contact with the shield electrode included in the trench. - View Dependent Claims (16, 17, 18)
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19. A semiconductor device, comprising:
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a plurality of trenches extending into a semiconductor region, a trench from the plurality of trenches having a first end, a second end, and opposing sidewalls lined with a dielectric layer, the trench further including a shield electrode; and a conductive shield trace disposed over the semiconductor region and aligned orthogonal to the trench, the conductive trace having a length running adjacent to the first end of the trench and a width extending over the first end of the trench, the conductive shield trace in electrical contact with the shield electrode included in the trench. - View Dependent Claims (20, 21, 22, 23)
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Specification