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Trench-based power semiconductor devices with increased breakdown voltage characteristics

  • US 8,963,212 B2
  • Filed: 10/21/2013
  • Issued: 02/24/2015
  • Est. Priority Date: 12/08/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • at least a first device region and a second device region disposed at a surface of a semiconductor region, the second device region being adjacent to the first device region and spaced apart from the first device region;

    a connection region disposed between the first device region and the second device region;

    a trench extending into the semiconductor region and at least extending from the first device region, through the connection region, and to the second device region;

    a dielectric layer lining opposing sidewalls of the trench;

    an electrode disposed in the trench; and

    a conductive trace disposed over a portion of the trench in the connection region and electrically coupled to a portion of the electrode disposed in the connection region.

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