Back-side illuminated image sensor with a junction insulation
First Claim
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1. A back-side illuminated image sensor, comprising:
- semiconductor substrate of a first conductivity type having a front surface and a rear surface;
a first semiconductor layer of the first conductivity type extending on the rear surface of the substrate, the first semiconductor layer having a higher doping level than the substrate, a front surface on the substrate, and a rear surface;
a second semiconductor layer of a second conductivity type, opposite to the first conductivity type, extending on the rear surface of the first semiconductor layer, the second semiconductor layer having a front surface, on the rear surface of the first semiconductor layer, and a rear surface; and
doped polysilicon regions, of the second conductivity type, extending orthogonally from the front surface of the substrate to the front surface of said second semiconductor.
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Abstract
A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.
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8 Claims
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1. A back-side illuminated image sensor, comprising:
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semiconductor substrate of a first conductivity type having a front surface and a rear surface; a first semiconductor layer of the first conductivity type extending on the rear surface of the substrate, the first semiconductor layer having a higher doping level than the substrate, a front surface on the substrate, and a rear surface; a second semiconductor layer of a second conductivity type, opposite to the first conductivity type, extending on the rear surface of the first semiconductor layer, the second semiconductor layer having a front surface, on the rear surface of the first semiconductor layer, and a rear surface; and doped polysilicon regions, of the second conductivity type, extending orthogonally from the front surface of the substrate to the front surface of said second semiconductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification