Silicon-based suspending antenna with photonic bandgap structure

• US 8,963,779 B2
• Filed: 02/24/2011
• Issued: 02/24/2015
• Est. Priority Date: 11/08/2010
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Huang, I-Yu, Sun, Chian-Hao, Hsu, Kuo-Yi
• Primary Examiner(s): Levi, Dameon E
• Assistant Examiner(s): Dawkins, Collin
• Application Number:
  US13/034,025
• Publication Number:
  US 20120112982A1
• Time in Patent Office: 1,461 Days
• Field of Search: 343/700.MS, 343/767, 343/846
• US Class Current: 343/700.MS
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 15/006 Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
• CPC Class Codes: H01Q 5/25 Ultra-wideband [UWB] systems, e.g. multiple resonance systems; Pulse systems
• CPC Class Codes: H01Q 5/364 Creating multiple current paths

Abstract

The disclosure provides a silicon-based suspending antenna with photonic bandgap structure, which includes a silicon substrate, an electrode layer, a spacing part and an F-shaped structure. The silicon substrate has a first side surface and a second side surface oppositing to the first surface. The electrode layer has a flat part, a first base and at least one second base, in which one side of the flat part has a notch, the first base, the second base and the notch are separately disposed on the second side surface and essentially parallel to the longitudinal edge of the second side surface, the first base has a main body and an extension, and the extension extends from the main body and into the notch. The F-shaped structure has a longitudinal part disposed on the spacing part and is parallel to the second side surface.

Claims

1. A silicon-based suspending antenna with photonic bandgap structure, comprising:

a silicon substrate, having a first side surface and a second side surface oppositing to the first surface, the first side surface having a plurality of regular recesses for restraining spurious wave of the silicon-based suspending antenna and the second side surface having a longitudinal edge;

an electrode layer, having a flat part, a first base and at least one second base, one side of the flat part having a notch, the first base, the second base and the notch separately being disposed on the second side surface and essentially parallel to the longitudinal edge of the second side surface, the first base having a main body and an extension, and the extension extending from the main body and into the notch, wherein the at least one second base is disposed at a corner of the silicon substrate;

a spacing part, disposed on the second base; and

an F-shaped structure, having a longitudinal part disposed on the spacing part and parallel to the second side surface, wherein the spacing part is configured for supporting the longitudinal part and the F-shaped structure is supported by the first base, the at least one second base and the spacing part thereby.

2. The silicon-based suspending antenna with photonic bandgap structure according to claim 1, wherein the opening of each recess is square, and each side length of the opening of each recess is 1.764 to 2.156 mm.

3. The silicon-based suspending antenna with photonic bandgap structure according to claim 1, wherein each recess has a depth of 315 to 385 μ

m.

4. The silicon-based suspending antenna with photonic bandgap structure according to claim 3, wherein each recess has a depth of 350 μ

m.

5. The silicon-based suspending antenna with photonic bandgap structure according to claim 1, wherein corresponding to a longitudinal direction of the first side surface, every two neighboring recesses has a first interval therebetween;

corresponding to a wide direction of the first side surface, every two neighboring recesses has a second interval therebetween; and

there are a third interval, a fourth interval and a fifth interval between the recesses and two longitudinal edges of the first side surface, respectively, and between the recesses and a wide edge of the first side surface.

6. The silicon-based suspending antenna with photonic bandgap structure according to claim 5, wherein the first interval is 0.306 to 0.374 mm, the second interval is 0.126 to 0.154 mm, the third interval is 0.306 to 0.374 mm, the fourth interval is 0.45 to 0.55 mm, and the fifth interval is 0.54 to 0.66 mm.

7. The silicon-based suspending antenna with photonic bandgap structure according to claim 1, wherein the electrode layer is a Ground-Signal-Ground (GSG) bottom electrode, two grounding contacts are disposed on the flat part and at the opposite sides of the notch, and a coplanar waveguide (CPW) feed-in point is disposed at the extension.

8. The silicon-based suspending antenna with photonic bandgap structure according to claim 1, wherein the flat part has a length and a width n of 16.2 to 19.8 mm and 6.3 to 7.7 mm, respectively;

the extension has a length and a width of 0.54 to 0.66 mm and 0.05 to 0.15 mm, respectively.

9. The silicon-based suspending antenna with photonic bandgap structure according to claim 7, wherein there is a distance of 0.09 to 0.11 mm between the notch and the longitudinal edge of the second side surface.

10. The silicon-based suspending antenna with photonic bandgap structure according to claim 7, wherein the notch has a width and a depth of 0.18 to 0.30 mm and 0.135 to 0.165 mm, respectively.

11. The silicon-based suspending antenna with photonic bandgap structure according to claim 10, wherein there is a substantially fixed distance of 0.03 to 0.08 mm between the extension and different positions of the notch.

12. The silicon-based suspending antenna with photonic bandgap structure according to claim 7, wherein the electrode layer includes a plurality of conductive layers.

13. The silicon-based suspending antenna with photonic bandgap structure according to claim 12, wherein the electrode layer sequently includes a TaN layer, a Ta layer and a Cu layer, and the TaN layer is disposed on the second side surface.

14. The silicon-based suspending antenna with photonic bandgap structure according to claim 1, wherein there is a distance of 11.88 to 14.52 μ

m between the F-shaped structure and the silicon substrate.

15. The silicon-based suspending antenna with photonic bandgap structure according to claim 1, wherein the F-shaped structure has a thickness, maximum length and maximum width of 5.0 to 7.0 μ

m, 6.3 to 7.7 mm and 3.4 to 3.8 mm, respectively.

16. The silicon-based suspending antenna with photonic bandgap structure according to claim 1, wherein the F-shaped structure further comprises a first transverse part and a second transverse part, the first transverse part is connected to a second end of the longitudinal part, and the second transverse part is connected to the longitudinal part and between the first end and the second end.

17. The silicon-based suspending antenna with photonic bandgap structure according to claim 16, wherein the second transverse part has a width of 0.45 to 0.55 mm.

18. The silicon-based suspending antenna with photonic bandgap structure according to claim 16, wherein there is a distance of 0.81 to 0.99 mm between the second transverse part and an end surface of the first end.

19. A method for making a silicon-based suspending antenna with photonic bandgap structure, comprising the steps of:

providing a silicon substrate having a first side surface and a second side surface oppositing to the first surface, wherein the second side surface has a longitudinal edge;

defining a first pattern and a second pattern on the first side surface and the second side surface, respectively;

forming an electrode layer on the second side surface according to the second pattern, wherein the electrode layer has a flat part, a first base and at least one second base, one side of the flat part having a notch, the first base, the second base and the notch separately being disposed on the second side surface and essentially parallel to the longitudinal edge of the second side surface, the first base has a main body and an extension, and the extension extends from the main body and into the notch, wherein the at least one second base is disposed at a corner of the silicon substrate;

forming a spacing part on the second base;

forming an F-shaped structure, wherein the F-shaped structure has a longitudinal part disposed on the spacing part and is parallel to the second side surface, wherein the spacing part is configured for supporting the longitudinal part and the F-shaped structure is supported by the first base, the at least one second base and the spacing part thereby; and

forming a plurality of regular recesses on the first side surface according to the first pattern for restraining spurious wave of the silicon-based suspending antenna.

20. The method according to claim 19, wherein a first pattern and a second pattern are defined by using a first photoresist mask and a second photoresist mask, respectively.

21. The method according to claim 20, further comprising the steps of:

forming a plurality of conductive layers according to the second pattern; and

removing the second photoresist mask and parts of the conductive layers thereon to form the electrode layer.

22. The method according to claim 21, wherein a TaN layer, a Ta layer and a Cu layer is formed on the second side surface to form the conductive layers.

23. The method according to claim 19, further comprising the steps of:

disposing a third photoresist mask on the second side surface to define a third pattern, wherein the third photoresist mask has two openings located at the relative position above the main body and the second base; and

forming a spacing part in the openings by electroplating deposition.

24. The method according to claim 23, further comprising a step of forming a seed layer, wherein the seed layer covers the third photoresist mask and the spacing parts and has two notches correspondingly above the spacing parts.

25. The method according to claim 24, further comprising the steps of:

defining a fourth pattern on the seed layer by using a fourth photoresist mask, wherein the fourth pattern matches the pattern of the F-shaped structure; and

forming the F-shaped structure on the seed layer according to the fourth pattern by electroplating deposition.

26. The method according to claim 24, wherein part of the silicon substrate is removed from the first side surface according to the first pattern to form the regular recesses, and the third photoresist mask, the fourth photoresist mask and the partial seed layer out of the fourth pattern are removed.