Method of manufacturing a sensor network incorporating stretchable silicon

• US 8,966,730 B1
• Filed: 04/12/2011
• Issued: 03/03/2015
• Est. Priority Date: 02/19/2009
• Status: Active Grant

• Current Assignee: The Boeing Co.
• Original Assignee: The Boeing Co.
• Inventors: Carralero, Michael Alexander, Vian, John Lyle
• Primary Examiner(s): Tugbang, A. Dexter
• Application Number:
  US13/084,729
• Time in Patent Office: 1,421 Days
• Field of Search: 29/253.5, 298/42, 298/46, 295/94, 295/95, 298/29, 977/701, 977/762, 977/882, 977/932, 977/948, 310/311, 310/328, 310/330, 310/331, 310/332, 310/339
• US Class Current: 29/25.35
• CPC Class Codes: B82B 3/0014 Array or network of similar nanostructural elements
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01M 5/00 Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings G01M9/00 takes precedence
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H10N 30/00 Piezoelectric or electrostrictive devices integrated devices or assemblies of multiple devices H10N39/00
• CPC Class Codes: H10N 30/80 Constructional details
• CPC Class Codes: Y10T 29/42 Piezoelectric device making
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49005 Acoustic transducer
• CPC Class Codes: Y10T 29/49007 Indicating transducer
• CPC Class Codes: Y10T 29/49124 On flat or curved insulated base, e.g., printed circuit, etc.
• CPC Class Codes: Y10T 29/49147 Assembling terminal to base

Abstract

A method of manufacturing a sensor network is described which includes stretching a silicon substrate over a desired area, and generating a plurality of nodes fabricated on the stretchable silicon substrate. The nodes include at least one of an energy harvesting and storage element, a communication device, a sensing device, and a processor. The nodes are interconnected via interconnecting conductors formed in the substrate.

Claims

1. A method for fabricating a network comprising:

stretching a silicon medium over a desired area;

processing the stretched silicon medium to generate a number of nodes thereon, at least a first portion of the nodes including an energy harvesting and storage element having zinc oxide nanowires grown on the silicon medium, at least a second portion of the nodes including at least one of a communication device, a sensing device, and a processor; and

utilizing conductors within the stretchable silicon medium to redundantly interconnect the generated nodes to form the network.

2. A method according to claim 1 wherein utilizing conductors within the stretchable medium comprises routing power from the energy harvesting and storage element to the at least one of the communication device, the sensing device, and the processor.

3. A method according to claim 1 wherein processing the stretched silicon medium comprises generating the at least one communication device with a wireless communications capability.

4. A method according to claim 1 wherein processing the stretched silicon medium comprises generating the at least one processor capable of communicating with an external network.

5. A method according to claim 1 wherein processing the stretched silicon medium comprises generating at least one of a sensor for structural health monitoring and management, an ice accretion sensor, and a sensor configured for sensing dynamic flow separation of the air surrounding the sensor.

6. A method according to claim 1 wherein processing the stretched silicon medium comprises fabricating piezo-electric devices that convert mechanical stress into electrical energy as the energy harvesting and storage element.

7. A method according to claim 1 wherein processing the stretched silicon medium comprises generating the communication device that includes an RF transceiver.

8. A method according to claim 1 wherein processing the stretched silicon medium comprises generating the communication device that communicates via a vehicle network interface.

9. A method according to claim 1 wherein stretching the silicon medium over the desired area comprises stretching a monolithic silicon die stretched over the desired area.

10. A method according to claim 1 wherein processing the stretched silicon medium comprises fabricating at least one of temperature sensors, pressure sensors, and vibration sensors.