Device and process for chemical vapor phase treatment
First Claim
1. Device for treating substrates, comprising:
- a chamber having controlled pressure and temperature,a substrate support which is provided in the chamber,wherein the chamber comprises;
a first gas inlet and an upper chamber wall which is provided with a plurality of first holes which are coupled to the first gas inlet and a plurality of second holes which are coupled to a second gas inlet, the first holes and the second holes opening in the chamber and being regularly distributed in the upper chamber wall,a heating element which is capable of heating the upper chamber wall anda gas discharge ring which is provided between the upper chamber wall and the substrate support, said heating element having a lower portion comprising a spiral channel, the upper chamber wall being electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper chamber wall and the substrate support;
wherein the heating element is provided above the upper chamber wall in order to heat the upper chamber wall and the inlets;
wherein the device comprises a body which defines a recess in a face and a cover which closes the recess at that face in order to form said chamber, wherein the cover comprises a main portion, wherein the upper chamber wall is held between the main portion of the cover and said gas discharge ring, wherein said main portion of the cover comprises a circular concavity which is provided from the main surface thereof opposite the chamber, and wherein said heating element is arranged in said circular concavity.
7 Assignments
0 Petitions
Accused Products
Abstract
Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to a first inlet and a plurality of second channels connected to a second inlet, the first and second channels opening into the chamber and being regularly distributed in the upper wall, a heating element provided above the upper wall and a gas discharge ring provided between the upper wall and the substrate support, the upper wall begin electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.
-
Citations
14 Claims
-
1. Device for treating substrates, comprising:
-
a chamber having controlled pressure and temperature, a substrate support which is provided in the chamber, wherein the chamber comprises; a first gas inlet and an upper chamber wall which is provided with a plurality of first holes which are coupled to the first gas inlet and a plurality of second holes which are coupled to a second gas inlet, the first holes and the second holes opening in the chamber and being regularly distributed in the upper chamber wall, a heating element which is capable of heating the upper chamber wall and a gas discharge ring which is provided between the upper chamber wall and the substrate support, said heating element having a lower portion comprising a spiral channel, the upper chamber wall being electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper chamber wall and the substrate support; wherein the heating element is provided above the upper chamber wall in order to heat the upper chamber wall and the inlets; wherein the device comprises a body which defines a recess in a face and a cover which closes the recess at that face in order to form said chamber, wherein the cover comprises a main portion, wherein the upper chamber wall is held between the main portion of the cover and said gas discharge ring, wherein said main portion of the cover comprises a circular concavity which is provided from the main surface thereof opposite the chamber, and wherein said heating element is arranged in said circular concavity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
Specification