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Semiconductor device and method for manufacturing the same

  • US 8,968,017 B2
  • Filed: 09/11/2013
  • Issued: 03/03/2015
  • Est. Priority Date: 03/22/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor layer of a first conductivity type;

    a second semiconductor layer of the first conductivity type provided in a surface region of the first semiconductor layer;

    a first electrode extending in a first direction and provided inside a first trench, the first trench extending in the first direction and being opened to a surface of the second semiconductor layer; and

    a second electrode extending in a second direction crossing the first direction, and provided in a second trench, the second trench extending in the second direction and being opened to the surface of the second semiconductor layer, a dimension from the surface of the second semiconductor layer to a lower end of the second electrode being shorter than a dimension from the surface of the second semiconductor layer to a lower end of the first electrode.

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