Temperature adjusting mechanism and semiconductor manufacturing apparatus using temperature adjusting mechanism

• US 8,968,512 B2
• Filed: 06/30/2009
• Issued: 03/03/2015
• Est. Priority Date: 07/04/2008
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Nishimoto, Shinya
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US12/737,310
• Publication Number:
  US 20110108195A1
• Time in Patent Office: 2,072 Days
• Field of Search: 118/723.MW, 118/723.MR, 118/723.MA, 118/723.M, 118/723.AN, 118/723.I, 118/666, 15634541-34542, 15634548-34549, 156/345.24, 156/345.27
• US Class Current: 156/345.27
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

Provided is a temperature adjusting mechanism, which can keep deviation of a temperature of a portion in contact with the temperature adjusting mechanism to be small by controlling the temperature accurately at a high speed. A semiconductor manufacturing apparatus using such temperature adjusting mechanism is also provided. A cooling jacket (6) is provided with a cooling channel (61), and a heat lane (62). The heat lane (62) is provided with a heat receiving section (63), and a heat dissipating section (64), and seals a two-phase condensable working fluid (hereinafter referred to as the working liquid) in an annular narrow tube alternately folds back and forth therebetween. The heat dissipating section (64) is a portion to be cooled by the cooling channel (61), and the heat receiving section (63) is a portion having a temperature higher than that of the heat dissipating section (64). In the heat receiving section (63), heat is received, the working liquid is self-excited by nucleate boiling, and the working liquid transfers sensible heat while being circulated. Furthermore, in the heat receiving section (63), a liquid phase absorbs heat and the phase is transformed into a vapor phase, and in the heat dissipating section (64), a vapor phase dissipates heat and is cooled and condensed, the phase is transformed into a liquid phase, and latent heat is transferred by vapor-liquid phase transformation. Heat is transferred between the heat receiving section (63) and the heat dissipating section (64), and the temperature is uniformized in a short time.

Claims

1. A temperature adjusting mechanism for controlling a temperature of a dielectric window provided within a semiconductor manufacturing device, the temperature adjusting mechanism comprising:

a narrow annular tube positioned alongside an outer surface of a processing device housing a processing object; and

a two-phase condensable working liquid of vapor and liquid sealed in the narrow annular tube,

wherein the narrow annular tube comprises;

a heat receiving section in which the two-phase condensable working liquid absorbs heat and undergoes phase transition from liquid phase to vapor phase; and

a heat dissipating section in which the two-phase condensable working liquid releases heat and undergoes phase transition from vapor phase to liquid phase,

wherein a cooling channel is provided over at least part of said heat dissipating section,

the narrow annular tube and the cooling channel are in separate cooling circuits,

a heat medium which is different from the two-phase condensable working liquid is circulated inside the cooling channel, and

the two-phase condensable working liquid inside the heat dissipating section releases heat to the cooling channel, and

wherein the narrow annular tube and the cooling channel are provided within a plate-shaped cooling jacket installed above the dielectric window,

the cooling channel is provided at a peripheral portion of the plate-shaped cooling jacket, and

the narrow annular tube is extended from a central portion of the plate-shaped cooling jacket to the peripheral portion of the plate-shaped cooling jacket.

2. The temperature adjusting mechanism according to claim 1, wherein the narrow annular tube is installed by meandering.

3. The temperature adjusting mechanism according to claim 2, wherein a distance between the cooling channel and an inner surface of the processing device is more than a distance between the narrow annular tube and said inner surface of the processing device.

4. The temperature adjusting mechanism according to claim 1, wherein the temperature adjusting mechanism is divided into a plurality of sections each having an independent narrow annular tube.

5. The temperature adjusting mechanism according to claim 4, wherein each of said plurality of sections is provided with the cooling channel over at least part of the independent narrow annular tube.

6. The temperature adjusting mechanism according to claim 4, wherein the temperature of each of said plurality of sections can be adjusted independently to a predetermined temperature.

7. The temperature adjusting mechanism according to claim 1, wherein the narrow annular tube is positioned over a plate shape member sealing an upper portion of a processing container.

8. The temperature adjusting mechanism according to claim 7, wherein the narrow annular tube is further positioned at an upper portion of a side wall of the processing container.

9. The temperature adjusting mechanism according to claim 7, wherein the narrow annular tube meanders by folding between a center and a peripheral edge of the plate shape member.

10. The temperature adjusting mechanism according to claim 9, wherein the cooling channel is provided in proximity of the peripheral edge of said plate shape member.

11. The temperature adjusting mechanism according to claim 7, wherein the cooling channel extends from a center portion to a peripheral portion of the plate shape member.

12. The temperature adjusting mechanism according to claim 1, wherein the narrow annular tube is positioned at an upper portion of a side wall of a processing container.

13. A temperature adjusting mechanism for controlling a temperature of a lower shower plate provided within a semiconductor manufacturing device, the temperature adjusting mechanism comprising:

a narrow annular tube positioned within the lower shower plate located inside a processing container; and

a two-phase condensable working liquid of vapor and liquid sealed in the narrow annular tube,

wherein the narrow annular tube comprises;

a heat receiving section in which the two-phase condensable working liquid absorbs heat and undergoes phase transition from liquid phase to vapor phase; and

a heat dissipating section in which the two-phase condensable working liquid releases heat and undergoes phase transition from vapor phase to liquid phase,

wherein a cooling channel is provided over at least part of said heat dissipating section,

the narrow annular tube and the cooling channel are in separate cooling circuits,

a heat medium which is different from the two-phase condensable working liquid is circulated inside the cooling channel, and

the two-phase condensable working liquid inside the heat dissipating section releases heat to the cooling channel, and

wherein the narrow annular tube and the cooling channel are provided within the lower shower plate installed below a dielectric window provided within the semiconductor manufacturing device,

the cooling channel is provided at a peripheral portion of the lower shower plate, and

the narrow annular tube is extended from a central portion of the lower shower plate to the peripheral portion of the lower shower plate.

14. The temperature adjusting mechanism according to claim 13, wherein the lower shower plate includes a circular grid frame comprising the narrow annular tube and a processing gas supply structure for plasma treatment.

15. A semiconductor manufacturing device comprising:

a processing container;

a dielectric window; and

a temperature adjusting mechanism for minimizing for controlling a temperature of the dielectric window, wherein the temperature adjusting mechanism comprises;

a narrow annular tube positioned alongside an outer surface of the semiconductor manufacturing device; and

a two-phase condensable working liquid of vapor and liquid sealed in the narrow annular tube,

wherein the narrow annular tube comprises;

a heat receiving section in which the two-phase condensable working liquid absorbs heat and undergoes phase transition from liquid phase to vapor phase; and

a heat dissipating section in which the two-phase condensable working liquid releases heat and undergoes phase transition from vapor phase to liquid phase,

wherein a cooling channel is provided over at least part of said heat dissipating section,

the narrow annular tube and the cooling channel are in separate cooling circuits,

a heat medium which is different from the two-phase condensable working liquid is circulated inside the cooling channel, and

the two-phase condensable working liquid inside the heat dissipating section releases heat to the cooling channel, and

wherein the narrow annular tube and the cooling channel are provided within a plate-shaped cooling jacket installed above the dielectric window,

the cooling channel is provided at a peripheral portion of the plate-shaped cooling jacket, and

the narrow annular tube is extended from a central portion of the plate-shaped cooling jacket to the peripheral portion of the plate-shaped cooling jacket.

16. The semiconductor manufacturing device according to claim 15, wherein the narrow annular tube is positioned over a plate shape member sealing an upper portion of the processing container.

17. The semiconductor manufacturing device according to claim 15, wherein the narrow annular tube is positioned at an upper portion of a side wall of the processing container.