Dielectric materials

• US 8,968,603 B2
• Filed: 03/30/2011
• Issued: 03/03/2015
• Est. Priority Date: 05/12/2010
• Status: Active Grant

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Krishna, Kalaga Murali, Matani, Lohit
• Primary Examiner(s): Silverman, Stanley
• Assistant Examiner(s): VIJAYAKUMAR, KALLAMBELLA M
• Application Number:
  US13/075,911
• Publication Number:
  US 20110281717A1
• Time in Patent Office: 1,434 Days
• Field of Search: 505134-139, 505/210, 505/866, 252/500, 252/519.12, 252/520.2, 252/520.11, 252/520.22, 252/520.21, 423/598, 501134-139, 307/104, 428/403, 428/404
• US Class Current: 252/500
• CPC Class Codes: C04B 2235/3208 Calcium oxide or oxide-forming salts thereof, e.g. lime
• CPC Class Codes: C04B 2235/3213 Strontium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3215 Barium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3217 Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
• CPC Class Codes: C04B 2235/3227 Lanthanum oxide or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3234 Titanates, not containing zirconia
• CPC Class Codes: C04B 2235/3236 Alkaline earth titanates
• CPC Class Codes: C04B 2235/3241 Chromium oxides, chromates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3244 Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3281 Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
• CPC Class Codes: C04B 2235/3298 Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
• CPC Class Codes: C04B 2235/40 Metallic constituents or additives not added as binding phase
• CPC Class Codes: C04B 2235/445 Fluoride containing anions, e.g. fluosilicate
• CPC Class Codes: C04B 2235/483 Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
• CPC Class Codes: C04B 2235/604 Pressing at temperatures other than sintering temperatures
• CPC Class Codes: C04B 2235/652 Reduction treatment C04B2235/664 takes precedence
• CPC Class Codes: C04B 2235/656 characterised by specific heating conditions during heat treatment
• CPC Class Codes: C04B 2235/6567 Treatment time
• CPC Class Codes: C04B 2235/658 Atmosphere during thermal treatment
• CPC Class Codes: C04B 2235/6582 Hydrogen containing atmosphere
• CPC Class Codes: C04B 2235/6585 : at an oxygen percentage above that of air
• CPC Class Codes: C04B 2235/80 : Phases present in the sintered or melt-cast ceramic products other than the main phase
• CPC Class Codes: C04B 2235/85 : Intergranular or grain boundary phases
• CPC Class Codes: C04B 35/462 : based on titanates
• CPC Class Codes: C04B 35/465 : based on alkaline earth metal titanates
• CPC Class Codes: C04B 35/4682 : based on BaTiO3 perovskite phase
• CPC Class Codes: C04B 35/47 : based on strontium titanates
• CPC Class Codes: H01F 38/14 : Inductive couplings for wireless supply or distribution of electric power using inductive coupling H02J50/10
• CPC Class Codes: Y10T 428/2991 : Coated

Abstract

A dielectric material is provided. The material includes Ca_1-x-yBa_xSr_yTi_{1 -z}Cr_zO_3-δA_p, wherein A is nitrogen, fluorine, or combinations thereof; x and y can vary between the value of zero and one such that 0<x<1 and 0<y<1; z can vary between the value of zero and 0.01 such that 0≦z≦0.01; and δ and p can vary between the value of zero and one such that 0≦δ≦1 and 0≦p≦1, with a proviso that z and p are not simultaneously zero. A dielectric component including the dielectric material and a system including the dielectric component are provided.

Claims

1. A material comprising:

Ca_1-x-yBa_xSr_yTi_1-zCr_zO_3-δ

A_p, in a bulk, polycrystalline form comprising grains and grain boundaries, wherein

A is nitrogen, fluorine, or combinations thereof;

0<

x<

1;

0<

y<

1;

0≦

z≦

0.01;

0≦

δ

≦

1; and

0≦

p≦

1, with a proviso that z and p are not simultaneously zero; and

a metallic bismuth phase dispersed at the grain boundaries.

2. The material of claim 1, wherein (x+y) is in the range from about 0.9 to about 1.

3. The material of claim 2, wherein x is greater than or equal to 0.3, and (x+y) is equal to about 1.

4. The material of claim 3, wherein z is greater than zero and less than or equal to 0.01, and (x+y) is equal to about 1.

5. The material of claim 4, comprising Ba_0.3Sr_0.7Ti_0.995Cr_0.005O₃.

6. The material of claim 4, comprising Ba_0.4Sr_0.6Ti_0.998Cr_0.002O₃.

7. The material of claim 1, wherein δ

is greater than zero and less than or equal to 0.5; and

p is greater than zero and less than or equal to 0.4.

8. The material of claim 7, comprising Ba_0.3Sr_0.7TiO_2.8N_0.13.

9. The material of claim 7, comprising Ba_0.3Sr_0.7Ti_0.995Cr_0.005O_2.8N_0.13.

10. The material of claim 7, comprising Ba_0.4Sr_0.6Ti_0.995Cr_0.005O_2.8N_0.13.

11. The material of claim 1, comprising Ba_0.55Sr_0.4Ca_0.05Ti_0.99Cr_0.01O₃.

12. A dielectric component comprising:

a material comprising Ca_1-x-yBa_xSr_yTi_1-zCr_zO_3-δ

A_p in a bulk, polycrystalline form comprising grains and grain boundaries, wherein

A is nitrogen, fluorine, or combinations thereof;

0<

x<

1;

0<

y<

1;

0≦

z≦

0.01;

0≦

δ

≦

1; and

0≦

p≦

1, with a proviso that z and p are not simultaneously zero; and

a metallic bismuth phase dispersed at the grain boundaries.

13. The dielectric component of claim 12, wherein an amount of metallic bismuth is less than about 3 mole percent of the material.

14. The dielectric component of claim 12, wherein density of the material is greater than about 96% of the theoretical density.

15. A system comprising:

a dielectric component comprising a material comprising Ca_1-x-yBa_xSr_yTi_1-zCr_zO_3-δ

A_p in a bulk, polycrystalline form comprising grains and grain boundaries, wherein

A is nitrogen, fluorine, or combinations thereof;

0<

x<

1;

0<

y<

1;

0≦

z≦

0.01;

0≦

δ

≦

1; and

0≦

p≦

1, with a proviso that z and p are not simultaneously zero; and

a metallic bismuth phase dispersed at the grain boundaries.