Laser ablation tape for solder interconnect formation

• US 8,969,134 B2
• Filed: 05/10/2013
• Issued: 03/03/2015
• Est. Priority Date: 05/10/2013
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Brun, Xavier F., Kumamoto, Takashi, Ahmed, Sufi
• Primary Examiner(s): Nhu, David
• Application Number:
  US13/891,279
• Publication Number:
  US 20140335686A1
• Time in Patent Office: 662 Days
• Field of Search: 438/30, 438/48, 438/57, 438/91, 438/106, 438/118, 438/141, 438/142, 438/692, 257/E21.006, 257/E21.007, 257/E21.053, 257/E21.189, 257/E21.304, 257/E21.347, 257/E21.352, 257/E21.499, 257/E21.508, 257/E21.517
• US Class Current: 438/106
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2224/03845 Chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 2224/0391 Forming a passivation layer after forming the bonding area
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/11442 using a powder
• CPC Class Codes: H01L 2224/11474 Multilayer masks
• CPC Class Codes: H01L 2224/11849 Reflowing
• CPC Class Codes: H01L 2224/1191 Forming a passivation layer after forming the bump connector
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13116 Lead [Pb] as principal constituent
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/12042 : LASER

Abstract

A tape capable of laser ablation may be used in the formation of microelectronic interconnects, wherein the tape may be attached to bond pads on a microelectronic device and vias may be formed by laser ablation through the tape to expose at least a portion of corresponding bond pads. The microelectronic interconnects may be formed on the bond pads within the vias, such as by solder paste printing and solder reflow. The laser ablation tape can be removed after the formation of the microelectronic interconnects.

Claims

1. A method of forming microelectronic devices, the method comprising:

providing a microelectronic device having at least one bond pad projecting above an active surface of the microelectronic device;

attaching a laser ablation tape to the at least one bond pad;

laser ablating at least one via through the laser ablation tape to expose at least a portion of the at least one bond pad;

forming a microelectronic interconnect on the at least one bond pad within the at least one via; and

removing the laser ablation tape.

2. The method of claim 1, wherein forming the microelectronic interconnect comprises:

depositing a solder paste within the at least one via; and

reflowing the solder paste.

3. The method of claim 1, wherein attaching the laser ablation tape to the at least one bond pad comprises:

forming the laser ablation tape by providing a base film and disposing an adhesive layer on the base film; and

attaching the laser ablation tape to the at least one bond pad with the adhesive layer.

4. The method of claim 1, wherein attaching the laser ablation tape to the at least one bond pad comprises:

forming the laser ablation tape by providing a base film, disposing an electrostatic discharge layer on the base film, and disposing an adhesive layer on the static discharge layer; and

attaching the laser ablation tape to the at least one bond pad with the adhesive layer.

5. The method of claim 4, wherein disposing the electrostatic discharge layer on the base film comprises disposing a conductive polymer on the base film.

6. The method of claim 4, wherein disposing the electrostatic discharge layer on the base film comprises disposing a conductive metal oxide on the base film.

7. The method of claim 1, wherein attaching the laser ablation tape to the at least one bond pad comprises:

forming the laser ablation tape by providing a base film and disposing an adhesive layer having a conductive filler disposed therein on the base film; and

attaching the laser ablation tape to the at least one bond pad with the adhesive layer.

8. The method of claim 7, wherein disposing the adhesive layer having the conductive filler disposed therein on the base film comprises disposing the adhesive layer having a conductive polymer disposed therein on the base film.

9. The method of claim 7, wherein disposing the adhesive layer having the conductive filler disposed therein on the base film comprises disposing the adhesive layer having the conductive material selected from the group comprising metal coated glass, aluminum doped zinc oxide, nickel-coated graphite, indium tin oxide, silver particles, and tin particles, disposed therein on the base film.

10. A method of forming microelectronic interconnects, the method comprising:

providing a microelectronic device having at least one bond pad projecting above an active surface of the microelectronic device;

depositing an underfill material over the microelectronic device active surface and the bond pads;

removing a portion of the underfill material, to expose an upper surface of the bond pads, while leaving a portion of the underfill material between the bond pads;

attaching a laser ablation tape to the at least one bond pad upper surface and the underfill material;

laser ablating at least one via through the laser ablation tape to expose at least a portion of the at least one bond pad upper surface;

forming a microelectronic interconnect on the at least one bond pad within the at least one via; and

removing the laser ablation tape.

11. The method of claim 10, wherein forming the microelectronic interconnect comprises:

depositing a solder paste within the at least one via; and

reflowing the solder paste.

12. The method of claim 10, wherein attaching the laser ablation tape to the at least one bond pad comprises:

forming the laser ablation tape by providing a base film and disposing an adhesive layer on the base film; and

attaching the laser ablation tape to the at least one bond pad with the adhesive layer.

13. The method of claim 10, wherein attaching the laser ablation tape to the at least one bond pad comprises:

forming the laser ablation tape by providing a base film, disposing a static discharge layer on the base film, and disposing an adhesive layer on the static discharge layer; and

attaching the laser ablation tape to the at least one bond pad with the adhesive layer.

14. The method of claim 13, wherein disposing the electrostatic discharge layer on the base film comprises disposing a conductive polymer on the base film.

15. The method of claim 13, wherein disposing the electrostatic discharge layer on the base film comprises disposing a conductive metal oxide on the base film.

16. The method of claim 10, wherein attaching the laser ablation tape to the at least one bond pad comprises:

forming the laser ablation tape by providing a base film and disposing an adhesive layer having a conductive filled disposed therein on the base film; and

attaching the laser ablation tape to the at least one bond pad with the adhesive layer.

17. The method of claim 16, wherein disposing the adhesive layer having the conductive filler disposed therein on the base film comprises disposing the adhesive layer having a conductive polymer disposed therein on the base film.

18. The method of claim 16, wherein disposing the adhesive layer having the conductive filler disposed therein on the base film comprises disposing the adhesive layer having the conductive material selected from the group comprising metal coated glass, aluminum doped zinc oxide, nickel-coated graphite, indium tin oxide, silver particles, and tin particles, disposed therein on the base film.

19. A method of forming microelectronic interconnects, the method comprising:

providing a microelectronic device having at least one bond pad projecting above an active surface of the microelectronic device;

depositing an underfill material over the microelectronic device active surface and the bond pads;

removing a portion of the underfill material, to expose an upper surface of the bond pads, while leaving a portion of the underfill material between the bond pads;

attaching a laser ablation tape to the at least one bond pad upper surface and the underfill material;

laser ablating at least one via through the laser ablation tape to expose at least a portion of the at least one bond pad upper surface;

depositing a solder paste within the at least one via;

reflowing the solder paste to form a microelectronic interconnect on the at least one bond pad within the at least one via; and

removing the laser ablation tape.

20. The method of claim 19, wherein attaching the laser ablation tape to the at least one bond pad upper surface comprises attaching a laser ablation tape having a mechanism for electrostatic discharge to the at least one bond pad upper surface.