Vertical gate LDMOS device
First Claim
1. A method of fabricating a vertical gate region in a laterally diffused metal oxide semiconductor (LDMOS) transistor, the method comprising:
- depositing a masking layer over an area defined on a well region implanted on a substrate;
etching through the masking layer in a first portion of the area to expose the well region;
etching the exposed well region to form a first trench;
filling the first trench with a dielectric material;
etching through the masking layer in a second portion of the area to expose the well region;
forming a second trench in the well such that the second trench abuts the first trench; and
forming an asymmetric vertical gate of the LDMOS transistor by filling the second trench with a conductive material.
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Accused Products
Abstract
A method of fabricating a vertical gate region in LDMOS transistor includes depositing a first masking layer on an n-well region implanted on a substrate, patterning the first masking layer to define an area, depositing a second masking layer over the area, etching through the second masking layer in a first portion of the area to expose the n-well region, and etching the exposed n-well region to form a first trench. The first trench, extending from a surface of the n-well region to a first depth, is filled with an oxide. The second masking layer is etched through in a second portion of the area to expose the n-well region. A second trench is formed in the n-well, the second trench extending from the surface to a second depth, less than the first depth. An asymmetric vertical gate is formed by filling the second trench with a conductive material.
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Citations
16 Claims
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1. A method of fabricating a vertical gate region in a laterally diffused metal oxide semiconductor (LDMOS) transistor, the method comprising:
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depositing a masking layer over an area defined on a well region implanted on a substrate; etching through the masking layer in a first portion of the area to expose the well region; etching the exposed well region to form a first trench; filling the first trench with a dielectric material; etching through the masking layer in a second portion of the area to expose the well region; forming a second trench in the well such that the second trench abuts the first trench; and forming an asymmetric vertical gate of the LDMOS transistor by filling the second trench with a conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification