Optoelectronic semiconductor chip and method for the production thereof
First Claim
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1. An optoelectronic semiconductor chip comprising:
- a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, anda conversion layer disposed on the radiation emission side the semiconductor layer stack, whereinthe conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength,the radiation emission side of the semiconductor layer stack has a first nanostructuring,the conversion layer is only disposed in the first nanostructuring so that a top side of the nanostructuring is free of the conversion layer and so that the nanostructuring is completely filled with the conversion layer,wherein the first nanostructuring is composed of a plurality of nanorods and recesses and the top side is a side remote from a continuous layer of the semiconductor layer stack, andthe active layer only covers all lateral surfaces and base surfaces of the recesses so that the top side of the nanostructuring is free of the active layer.
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Abstract
An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
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Citations
18 Claims
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1. An optoelectronic semiconductor chip comprising:
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a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, the conversion layer is only disposed in the first nanostructuring so that a top side of the nanostructuring is free of the conversion layer and so that the nanostructuring is completely filled with the conversion layer, wherein the first nanostructuring is composed of a plurality of nanorods and recesses and the top side is a side remote from a continuous layer of the semiconductor layer stack, and the active layer only covers all lateral surfaces and base surfaces of the recesses so that the top side of the nanostructuring is free of the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of producing a semiconductor chip comprising:
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providing a growth substrate, growing a semiconductor layer stack onto the growth substrate which comprises an active layer and a radiation emission side, forming a first nanostructuring on the radiation emission side, and introducing a conversion layer into the first nanostructuring, wherein the semiconductor chip comprises; a semiconductor layer stack having the active layer that generates radiation, and the radiation emission side, and the conversion layer disposed on the radiation emission side the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has the first nanostructuring, the conversion layer is only disposed in the first nanostructuring so that a top side of the nanostructuring is free of the conversion layer and so that the nanostructuring is completely filled with the conversion layer, wherein the first nanostructuring is composed of a plurality of nanorods and recesses and the top side is a side remote from a continuous layer of the semiconductor layer stack, and the active layer only covers all lateral surfaces and base surfaces of the recesses so that the top side of the nanostructuring is free of the active layer. - View Dependent Claims (13, 14, 15)
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16. An optoelectronic semiconductor chip comprising:
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a semiconductor layer stack comprising an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack comprises a first nanostructuring, the conversion layer is only disposed in the first nanostructuring so that a top side of the nanostructuring is free of the conversion layer and so that the nanostructuring is completely filled with the conversion layer, wherein the first nanostructuring is composed of a plurality of nanorods and recesses and the top side is a side remote from a continuous layer of the semiconductor layer stack, the active layer only covers all lateral surfaces and base surfaces of the recesses so that the top side of the nanostructuring is free of the active layer, and the semiconductor layer stack in combination with the conversion layer is planar in formation so that the top side is formed as a planar surface. - View Dependent Claims (17, 18)
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Specification