Optoelectronic semiconductor chip and method for the production thereof

• US 8,969,900 B2
• Filed: 11/02/2011
• Issued: 03/03/2015
• Est. Priority Date: 11/12/2010
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Sabathil, Matthias, Linkov, Alexander, Klper, Christopher, Straburg, Martin, von Malm, Norwin
• Primary Examiner(s): Warren, Matthew E
• Application Number:
  US13/883,346
• Publication Number:
  US 20130328066A1
• Time in Patent Office: 1,217 Days
• Field of Search: 257/79, 257/95, 257/98, 257/E33.055, 257/E33.067, 257/E33.068
• US Class Current: 257/98
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.

Claims

1. An optoelectronic semiconductor chip comprising:

a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and

a conversion layer disposed on the radiation emission side the semiconductor layer stack, wherein

the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength,

the radiation emission side of the semiconductor layer stack has a first nanostructuring,

the conversion layer is only disposed in the first nanostructuring so that a top side of the nanostructuring is free of the conversion layer and so that the nanostructuring is completely filled with the conversion layer,

wherein the first nanostructuring is composed of a plurality of nanorods and recesses and the top side is a side remote from a continuous layer of the semiconductor layer stack, and

the active layer only covers all lateral surfaces and base surfaces of the recesses so that the top side of the nanostructuring is free of the active layer.

2. The semiconductor chip according to claim 1, wherein the active layer of the semiconductor layer stack is formed in the region of the first nanostructuring, and the active layer surrounds the first nanostructure in each case in one piece.

3. The semiconductor chip according to claim 1, wherein the first nanostructuring is formed as a plurality of nanorods.

4. The semiconductor chip according to claim 1, wherein the conversion layer completely fills the first nanostructuring such that a planar surface is formed.

5. The semiconductor chip according to claim 1, wherein the conversion layer is formed as a second nanostructuring which comprises a plurality of nanorods.

6. The semiconductor chip according to claim 5, wherein the first nanostructuring and the second nanostructuring are disposed with respect to each other such that they engage one another, and the first nanostructuring and the second nanostructuring are formed in a comb-like manner when viewed in a cross-sectional view.

7. The semiconductor chip according to claim 5, wherein the first nanostructuring and the second nanostructuring directly adjoin one another so that by comprising a layer sequence, they form a plurality of first layers and a plurality of second layers in a lateral direction perpendicular to a main radiation direction of the semiconductor chip and when seen in a cross-sectional view.

8. The semiconductor chip according to claim 5, wherein the first nanostructuring and the second nanostructuring each have a height of 100 nm to 1 μ

m.

9. The semiconductor chip according claim 1, wherein the active layer of the semiconductor layer stack is formed partially in the region of the first nanostructuring.

10. The semiconductor chip according to claim 1, wherein the conversion layer and the semiconductor layer stack are coupled in an optical and thermal manner.

11. The semiconductor chip according to claim 1, wherein the semiconductor chip is a thin-film chip.

12. A method of producing a semiconductor chip comprising:

providing a growth substrate,

growing a semiconductor layer stack onto the growth substrate which comprises an active

layer and a radiation emission side,

forming a first nanostructuring on the radiation emission side, and

introducing a conversion layer into the first nanostructuring,

wherein the semiconductor chip comprises;

a semiconductor layer stack having the active layer that generates radiation, and the radiation emission side, and

the conversion layer disposed on the radiation emission side the semiconductor layer stack, wherein

the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength,

the radiation emission side of the semiconductor layer stack has the first nanostructuring,

the conversion layer is only disposed in the first nanostructuring so that a top side of the nanostructuring is free of the conversion layer and so that the nanostructuring is completely filled with the conversion layer,

wherein the first nanostructuring is composed of a plurality of nanorods and recesses and the top side is a side remote from a continuous layer of the semiconductor layer stack, and

the active layer only covers all lateral surfaces and base surfaces of the recesses so that the top side of the nanostructuring is free of the active layer.

13. The method according to claim 12, wherein growing the semiconductor layer stack and forming the first nanostructuring comprise:

growing first layers of the semiconductor layer stack onto the whole surface of the growth substrate, and growing structured second layers of the semiconductor layer stack by means of a mask layer.

14. The method according to claim 12, wherein application of the conversion layer comprises:

introducing a conversion element into the first nanostructuring and then adding a matrix material into the first nanostructuring.

15. The method according to claim 12, wherein application of the conversion layer comprises:

applying the conversion layer by a laser beam evaporation procedure.

16. An optoelectronic semiconductor chip comprising:

a semiconductor layer stack comprising an active layer that generates radiation, and a radiation emission side, and

a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength,

the radiation emission side of the semiconductor layer stack comprises a first nanostructuring,

the conversion layer is only disposed in the first nanostructuring so that a top side of the nanostructuring is free of the conversion layer and so that the nanostructuring is completely filled with the conversion layer,

wherein the first nanostructuring is composed of a plurality of nanorods and recesses and the top side is a side remote from a continuous layer of the semiconductor layer stack,

the active layer only covers all lateral surfaces and base surfaces of the recesses so that the top side of the nanostructuring is free of the active layer, and

the semiconductor layer stack in combination with the conversion layer is planar in formation so that the top side is formed as a planar surface.

17. The semiconductor chip according to claim 16, wherein the active layer is formed by individual regions in the form of a peripheral surface of a half cylinder or a half truncated cone, as viewed in cross-section.

18. The semiconductor chip according to claim 16, wherein the active layer is formed as a contiguous layer, having a rectangular saw-tooth pattern, when viewed in a cross-sectional view.