Semiconductor light emitting device

• US 8,969,902 B2
• Filed: 07/05/2013
• Issued: 03/03/2015
• Est. Priority Date: 11/26/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Park, Hyung Jo
• Primary Examiner(s): Luu, Chuong A
• Application Number:
  US13/936,032
• Publication Number:
  US 20130292732A1
• Time in Patent Office: 606 Days
• Field of Search: 257/98, 257/99, 257/100, 257/59, 257/72, 257/79
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;

a reflective structure comprising a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index under the light emitting structure;

a first electrode layer formed on the first conductive semiconductor layer;

a metal layer under the reflective structure; and

a conductive support member having a metal material under the metal layer,

wherein the metal layer includes a plurality of protrusions and the plurality of protrusions are protruded in a direction toward a lower surface of the second conductive semiconductor layer,

wherein the metal layer makes electric contact with the reflective structure and the light emitting structure,

wherein the first conductive semiconductor layer includes an upper surface,

wherein the upper surface of the first conductive semiconductor layer includes a first region formed in a roughness and a second region formed in a flat surface under the first electrode layer,

wherein the first conductive semiconductor layer includes an AlGaN based semiconductor layer and the second conductive semiconductor layer includes an AlGaN based semiconductor layer,

wherein an outer sidewall of the conductive support member extends outward beyond an outer sidewall of the light emitting structure, and

wherein the lower surface of the second conductive semiconductor layer is contacted with the plurality of protrusions and the reflective structure.

2. The semiconductor light emitting device as claimed in claim 1, wherein the metal layer includes a bottom part located at lower position than that of a bottom surface of the reflective structure.

3. The semiconductor light emitting device as claimed in claim 2, wherein a top surface of the bottom part of the metal layer is physically contacted with the bottom surface of the reflective structure.

4. The semiconductor light emitting device as claimed in claim 3, wherein the plurality of protrusions includes first to fourth protrusions spaced apart from each other,

wherein the reflective structure includes a first reflective region and a second reflective region spaced apart from the first reflective region, and

wherein the first reflective region of the reflective structure is disposed between the first and second protrusions and the second reflective region of the reflective structure is disposed between the third and fourth protrusions.

5. The semiconductor light emitting device as claimed in claim 4, wherein a flat region of a top surface of the first conductive semiconductor layer includes a first edge region, a second edge region opposite to the first edge region, and a center region between the first and second regions.

6. The semiconductor light emitting device as claimed in claim 5, wherein the first region formed in the roughness of the first conductive semiconductor layer includes a first roughness region between the first and second regions and a second roughness region between the first and third regions.

7. The semiconductor light emitting device as claimed in claim 6, wherein the first reflective region corresponds to the first roughness region and the second reflective region corresponds to the second roughness region.

8. The semiconductor light emitting device as claimed in claim 7, wherein the electrode is disposed on the center region of the top surface of the first conductive semiconductor layer.

9. The semiconductor light emitting device as claimed in claim 4, wherein the metal layer comprises an at least one of Pt and Pd.

10. The semiconductor light emitting device as claimed in claim 4, wherein the conductive support member includes at least one of copper and gold.

11. The semiconductor light emitting device as claimed in claim 4, wherein the conductive support member has a width wider than that of the reflective structure.

12. The semiconductor light emitting device as claimed in claim 11, wherein the conductive support member has a thickness thicker than that of the bottom part of the metal layer.

13. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

an electrode on an upper surface of the first conductive semiconductor layer;

a conductive support member under a lower surface of the second conductive semiconductor layer;

a metal layer between the lower surface of the second conductive semiconductor layer and the conductive support member; and

a reflective structure between the metal layer and the lower surface of the second conductive semiconductor layer,

wherein the first conductive semiconductor layer includes an AlGaN-based layer and the second conductive semiconductor layer includes an AlGaN-based layer,

wherein the reflective structure includes a first layer and a second layer under the first layer,

wherein the first layer includes a different material from the second layer,

wherein the metal layer includes a bottom part located at lower position than that of a bottom surface of the reflective structure and a plurality of upper parts protruded in a direction toward the lower surface of the second conductive semiconductor layer,

wherein the bottom part of the metal layer is disposed between the reflective structure and the conductive support member,

wherein the plurality of upper parts of the metal layer is physically contacted with the lower surface of the second conductive semiconductor layer,

wherein a top surface of the reflective structure is physically contacted with the lower surface of the second conductive semiconductor layer, and

wherein a top surface of the first conductive semiconductor layer includes a roughness region corresponded to a first region of the reflective structure and an even region.

14. The semiconductor light emitting device as claimed in claim 13, wherein the roughness region of the top surface of the first conductive semiconductor layer is vertically overlapped to the first region of the reflective structure.

15. The semiconductor light emitting device as claimed in claim 14, wherein the first region of the reflective structure is disposed between the plurality of upper parts of the metal layer.

16. The semiconductor light emitting device as claimed in claim 14, wherein the electrode is disposed on the even region of the top surface of the first conductive semiconductor layer.

17. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

an electrode on a top surface of the first conductive semiconductor layer;

a conductive support member under a lower surface of the second conductive semiconductor layer;

a metal layer between the lower surface of the second conductive semiconductor layer and the conductive support member; and

a reflective structure between the metal layer and the lower surface of the second conductive semiconductor layer,

wherein the first conductive semiconductor layer includes an AlGaN-based layer and the second conductive semiconductor layer includes an AlGaN-based layer,

wherein the reflective structure includes a first layer and a second layer under the first layer,

wherein the first layer includes a different material from the second layer,

wherein the metal layer includes a bottom part located at lower position than that of a bottom surface of the reflective structure and a plurality of protrusions spaced apart from each other,

wherein the bottom part of the metal layer is disposed between the reflective structure and the conductive support member,

wherein a top surface of each of the plurality of protrusion are physically contacted with the lower surface of the second conductive semiconductor layer,

wherein a top surface of the reflective structure is physically contacted with the lower surface of the second conductive semiconductor layer, and

wherein an outer region of a top part of the conductive support member is disposed around the bottom part of the metal layer.

18. The semiconductor light emitting device as claimed in claim 17, wherein a top surface of each of the plurality of protrusions is located a higher position that of a lower surface of the reflective structure.

19. The semiconductor light emitting device as claimed in claim 17, wherein the plurality of protrusions are protruded from the bottom part and are physically contacted with the lower surface of the second conductive semiconductor layer.

20. The semiconductor light emitting device as claimed in claim 17, wherein the plurality of protrusions are contacted with a lateral surface of the reflective structure.