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Terminal structure, and semiconductor element and module substrate comprising the same

  • US 8,970,037 B2
  • Filed: 08/06/2013
  • Issued: 03/03/2015
  • Est. Priority Date: 08/24/2012
  • Status: Active Grant
First Claim
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1. A terminal structure comprising:

  • a base material;

    an external electrode formed on the base material;

    an insulating covering layer formed on the base material and on the external electrode and having an opening exposing at least part of the external electrode;

    an under bump metal layer containing Ni, filling the opening on the external electrode; and

    a dome-shaped bump containing Sn, covering the under bump metal layer, whereinat least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer.

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