High power FET switch

• US 8,970,278 B2
• Filed: 04/27/2011
• Issued: 03/03/2015
• Est. Priority Date: 04/27/2010
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: RF Micro Devices Incorporated (Qorvo, Inc.)
• Inventors: Granger-Jones, Marcus, Iversen, Christian Rye
• Primary Examiner(s): Le, Dinh
• Application Number:
  US13/095,357
• Publication Number:
  US 20110260780A1
• Time in Patent Office: 1,406 Days
• Field of Search: 327/306, 327/308, 333/81.R
• US Class Current: 327/308
• CPC Class Codes: H03K 17/102 in field-effect transistor switches

Abstract

Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. A control circuit provides biasing voltages to the gate, source, and drain contacts of each of the plurality of FET devices to switch the FET device stack to and from a closed state and an open state. In the open state, the gate contacts of each of the plurality of FET devices are biased by the control circuit at the second voltage. To prevent activation in the open state, the control circuit biases the drain contacts and source contacts of each of the plurality of FET devices at the first voltage. The first voltage is positive relative to a reference voltage, such as ground, while the second voltage is non-negative relative to the reference voltage but less than the first voltage.

Claims

1. A stacked FET switch comprising:

a field effect transistor (FET) device stack that is operable in an open state and in a closed state, the FET device stack comprising a plurality of FET devices coupled in series to form the FET device stack, each of the plurality of FET devices having a gate contact, a drain contact, and a source contact;

a control circuit operably associated with the FET device stack, the control circuit being configured to;

bias the gate contact of each of the plurality of FET devices at a first voltage and bias the drain contact and the source contact of each of the plurality of FET devices at a second voltage such that the FET device stack operates in the closed state;

the first voltage being positive relative to a reference voltage;

bias the gate contact of each of the plurality of FET devices at the second voltage and bias the drain contact and the source contact of each of the plurality of FET devices at the first voltage, such that the FET device stack operates in the open state; and

the second voltage being lower than the first voltage and substantially non-negative relative to the reference voltage.

2. The stacked FET switch of claim 1 wherein the second voltage is the same as the reference voltage.

3. The stacked FET switch of claim 1 wherein the second voltage is non-negative relative to the reference voltage.

4. The stacked FET switch of claim 1 wherein:

each of the plurality of FET devices are a type of FET device that is associated with a breakdown voltage and a pinch-off voltage; and

a magnitude of the first voltage can be estimated by dividing a magnitude of the breakdown voltage associated with the plurality of FET devices plus the pinch-off voltage associated with the plurality of FET devices by two.

5. The stacked FET switch of claim 1 further comprising:

an input terminal; and

an output terminal, wherein the FET device stack is coupled between the input terminal and the output terminal.

6. The stacked FET switch of claim 5, wherein:

the plurality of FET devices comprise at least a first FET device and a second FET device, the drain contact of the first FET device being at a first end of the FET device stack and the source contact of the second FET device being at a second end of the FET device stack; and

the stacked FET switch further comprises;

a first capacitor coupled in series between the input terminal and the drain contact of the first FET device; and

a second capacitor coupled in series between the source contact of the second FET device and the output terminal.

7. The stacked FET switch of claim 5 wherein:

each of the plurality of FET devices are a type of FET device that is associated with a breakdown voltage and a pinch-off voltage;

the FET device stack is adapted to receive a time-variant input signal having a peak voltage relative to the reference voltage, wherein the plurality of FET devices in the FET device stack are greater or equal to in number than the peak voltage divided by a magnitude of the breakdown voltage plus the pinch-off voltage associated with each of the plurality of FET devices.

8. The stacked FET switch of claim 1 further comprising a resistive circuit coupled to the gate contact of each of the plurality of FET devices, the resistive circuit providing a high resistance at the gate contact of each of the plurality of FET devices so as to render one or more parasitic capacitances associated with the gate contact of each of the plurality of FET devices negligible.

9. The stacked FET switch of claim 1 wherein the control circuit is coupled to the gate contact of each of the plurality of FET devices.

10. The stacked FET switch of claim 9 wherein:

the plurality of FET devices comprise at least a first FET device and a second FET device, the drain contact of the first FET device being at a first end of the FET device stack and the source contact of the second FET device being at a second end of the FET device stack; and

the control circuit is coupled to the drain contact of the first FET device and the source contact of the second FET device.

11. The stacked FET switch of claim 1 wherein the control circuit is coupled to the drain contact or the source contact of one or more of the plurality of FET devices.

12. The stacked FET switch of claim 1 wherein each of the plurality of FET devices has a transistor body.

22. The stacked FET switch of claim 12 further comprising a resistive circuit coupled to the transistor body of each of the plurality of FET devices, the resistive circuit providing a high resistance at the transistor body of each of the plurality of FET devices so as to render one or more parasitic capacitances associated with the transistor body of each of the plurality of FET devices negligible.

23. The stacked FET switch of claim 12 wherein the transistor body of each of the plurality of FET devices is biased at the reference voltage when the FET device stack is in the open state and the closed state.

13. A stacked FET switch comprising:

a field effect transistor (FET) device stack that is operable in an open state and in a closed state, the FET device stack comprising a plurality of FET devices coupled in series to form the FET device stack, each of the plurality of FET devices having a gate contact, a body contact, a drain contact, and a source contact;

a control circuit operably associated with the FET device stack and configured to;

positively bias the gate contact of each of the plurality of FET devices and substantially non-negatively bias the drain contact and the source contact of each of the plurality of FET devices relative to a reference voltage such that the FET device stack operates in the closed state;

positively bias the drain contact and the source contact of each of the plurality of FET devices relative to the reference voltage and substantially non-negatively bias the gate contact of each of the plurality of FET devices relative to the reference voltage, such that the FET device stack operates in the open state; and

a resistive circuit coupled to the body contact of each of the plurality of FET devices, the resistive circuit providing a high resistance at the body contact of each of the plurality of FET devices so as to render one or more parasitic capacitances associated with a transistor body of each of the plurality of FET devices negligible.

14. The stacked FET switch of claim 13 further comprising:

an input terminal for receiving a time-variant input signal that has a maximum peak voltage and a minimum peak voltage; and

an output terminal, wherein the FET device stack is coupled between the input terminal and the output terminal.

15. The stacked FET switch of claim 14 wherein:

the plurality of FET devices comprise at least a first FET device and a second FET device, the drain contact of the first FET device being at a first end of the FET device stack and the source contact of the second FET device being at a second end of the FET device stack; and

the stacked FET switch further comprises;

a first capacitor coupled in series between the input terminal and the drain contact of the first FET device; and

a second capacitor coupled in series between the source contact of the second FET device and the output terminal.

16. The stacked FET switch of claim 14 wherein the control circuit is further configured to non-negatively bias the drain contact and the source contact relative to the reference voltage when the FET device stack operates in the closed state.

17. The stacked FET switch of claim 14 wherein:

each of the plurality of FET devices is a type of FET device that has a breakdown voltage and a pinch-off voltage; and

the control circuit is further configured to positively bias the drain contact and the source contact of each of the plurality of FET devices relative to the reference voltage and substantially non-negatively bias the gate contact of each of the plurality of FET devices relative to the reference voltage, such that the FET device stack operates in the open state, such that, for each of the plurality of FET devices, a gate voltage of the gate contact relative to the drain contact does not exceed the breakdown voltage when the time-variant input signal is at the minimum peak voltage.

18. The stacked FET switch of claim 14 wherein:

each of the plurality of FET devices is a type of FET device that has a breakdown voltage and a pinch-off voltage;

the control circuit is further configured to positively bias the drain contact and the source contact of each of the plurality of FET devices relative to the reference voltage and substantially non-negatively bias the gate contact of each of the plurality of FET devices relative to the reference voltage, such that the FET device stack operates in the open state, such that, for each of the plurality of FET devices, a gate voltage of the gate contact relative to the source contact is higher than the pinch-off voltage when the time-variant input signal is at the maximum peak voltage.

19. The stacked FET switch of claim 13 wherein the resistive circuit coupled to the transistor body of each of the plurality of FET devices is further coupled to a fixed voltage source, such that the resistive circuit is coupled between the fixed voltage source and the transistor body of each of the plurality of FET devices.

20. A stacked FET switch comprising:

a field effect transistor (FET) device stack that is operable in an open state and in a closed state, the FET device stack comprising a plurality of FET devices coupled in series to form the FET device stack, each of the plurality of FET devices having a gate contact, a body contact, a drain contact, and a source contact;

a control circuit operably associated with the FET device stack, the control circuit being configured to;

apply a first bias voltage to the gate contact of each of the plurality of FET devices and apply a second bias voltage to the drain contact and the source contact of each of the plurality of FET devices such that the FET device stack operates in the closed state, wherein the first bias voltage is positive relative to a reference voltage; and

apply the first bias voltage to at least one of the drain contact or the source contact of at least one of the plurality of FET devices and apply the second bias voltage to the gate contact of each of the plurality of FET devices, such that the FET device stack operates in the open state, wherein the second bias voltage is substantially non-negative relative to the reference voltage; and

a resistive circuit coupled to the body contact of each of the plurality of FET devices, the resistive circuit providing a high resistance at the body contact of each of the plurality of FET devices so as to render one or more parasitic capacitances associated with a transistor body of each of the plurality of FET devices negligible.

21. The stacked FET switch of claim 20 wherein the plurality of FET devices are coupled to one another such that applying the first bias voltage to the at least one of the drain contact or the source contact of the at least one of the plurality of FET devices biases the drain contact and the source contact of each of the plurality of FET devices at the first bias voltage.