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High power FET switch

  • US 8,970,278 B2
  • Filed: 04/27/2011
  • Issued: 03/03/2015
  • Est. Priority Date: 04/27/2010
  • Status: Active Grant
First Claim
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1. A stacked FET switch comprising:

  • a field effect transistor (FET) device stack that is operable in an open state and in a closed state, the FET device stack comprising a plurality of FET devices coupled in series to form the FET device stack, each of the plurality of FET devices having a gate contact, a drain contact, and a source contact;

    a control circuit operably associated with the FET device stack, the control circuit being configured to;

    bias the gate contact of each of the plurality of FET devices at a first voltage and bias the drain contact and the source contact of each of the plurality of FET devices at a second voltage such that the FET device stack operates in the closed state;

    the first voltage being positive relative to a reference voltage;

    bias the gate contact of each of the plurality of FET devices at the second voltage and bias the drain contact and the source contact of each of the plurality of FET devices at the first voltage, such that the FET device stack operates in the open state; and

    the second voltage being lower than the first voltage and substantially non-negative relative to the reference voltage.

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