Semiconductor device

• US 8,971,044 B2
• Filed: 05/23/2012
• Issued: 03/03/2015
• Est. Priority Date: 09/26/2007
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Okumura, Keiji, Otsuka, Takukazu, Saito, Masao
• Primary Examiner(s): Datskovskiy, Michail V
• Application Number:
  US13/479,032
• Publication Number:
  US 20120229985A1
• Time in Patent Office: 1,014 Days
• Field of Search: 361/56, 361/65, 361/69, 361/115, 361/156, 36167946-67954, 361688-699, 361702-717, 361724-727, 257/686, 257690-692, 257/678, 257/698, 257/355, 257/356, 257/603, 257706-727, 165/80.2, 165/80.3, 165/80.4, 165/80.5, 165/104.33, 165/104.34, 165/185, 363/56, 363/69, 363/56.01, 363/56.02, 363/21.06, 363/21.14, 363 95- 98, 363/81, 363/84, 363/89, 363/126, 363/127, 363/108, 363/144, 363/234, 363/377, 363/147, 363 15- 17, 307/43, 307/52, 307/53, 307/60, 307/67, 307/59, 307/82, 298/900.32, 298/900.45, 298/952.12, 298/880.45, 298/900.3, 297/26, 297/265, 622/592
• US Class Current: 361/715
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H05K 1/14 Structural association of two or more printed circuits providing electric connection to or between printed circuits H05K1/11, H01R12/00
• CPC Class Codes: H05K 7/02 Arrangements of circuit components or wiring on supporting structure
• CPC Class Codes: H05K 7/20509 Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures

Abstract

A semiconductor device includes: a first output unit configured to output a first phase; a second output unit configured to output a second phase different from the first phase, the second output unit being disposed to be stacked on the first output unit; and a controller configured to control the output units.

Claims

1. A semiconductor device comprising:

a first output unit configured to output a first phase;

a second output unit disposed to be stacked on the first output unit and configured to output a second phase different from the first phase; and

a controller configured to control the output units, wherein

the output units further include a plurality of semiconductor elements and a wiring board having the semiconductor elements provided thereon, and

the plurality of semiconductor elements are disposed on both sides of the board.

2. The semiconductor device according to claim 1, wherein the output unit further includes a high voltage unit and a low voltage unit which is supplied with power having a voltage lower than that applied to the high voltage unit, and the high voltage unit and the low voltage unit are stacked.

3. The semiconductor device according to claim 2, wherein the high voltage unit and the low voltage unit include semiconductor elements, and the high voltage unit and the low voltage unit are stacked so that the semiconductor elements thereof face each other.

4. The semiconductor device according to claim 2, wherein the high voltage unit and the low voltage unit further include wirings and bus bars through which currents flow, any of the wirings and bus bars of the high voltage unit and any of the wirings and bus bars of the low voltage unit, through which a current flows in a direction opposite to that of a current flowing through the any of the wirings and bus bars of the high voltage unit, are disposed to each other in parallel.

5. The semiconductor device according to claim 1, wherein the first and second output units are provided upright on the controller.

6. The semiconductor device according to claim 5, wherein the first and second output units further include control bus bars for connection to the controller, and the control bus bars are inserted into holes formed in the controller.

7. The semiconductor device according to claim 1, wherein each of the first and second output units further includes a radiator plate for conducting heat in a direction different from a direction in which the controller is disposed.

8. The semiconductor device according to claim 1, further comprising:

a voltage regulator configured to regulate a voltage supplied from outside, wherein each of the output units and the voltage regulator has a switching device that is switchable on and off, and among the output units and the voltage regulator, one having a highest frequency for switching on and off the switching device is disposed on an outer side in a stacking direction.

9. The semiconductor device according to claim 8, wherein the voltage regulator has a frequency higher than that of each of the output units.

10. The semiconductor device according to claim 9, wherein the voltage regulator is disposed upstream of all the output units in an air flow.

11. The semiconductor device according to claim 8, wherein the voltage regulator further includes a high voltage unit having a switching device and a low voltage unit having a switching device and receiving a voltage lower than that applied to the high voltage unit, a frequency for switching on and off the switching device in the low voltage unit of the voltage regulator is higher than a frequency for switching on and off the switching device in the high voltage unit of the voltage regulator, and the low voltage unit of the voltage regulator is disposed on an outer side in a stacking direction.

12. The semiconductor device according to claim 11, wherein the low voltage unit of the voltage regulator is disposed upstream of the high voltage unit of the voltage regulator in an air flow.

13. A semiconductor device comprising:

a first output unit configured to output a first phase;

a second output unit disposed to be stacked on the first output unit and configured to output a second phase different from the first phase; and

a controller configured to control the output units; and

a voltage regulator configured to regulate a voltage supplied from outside,

wherein

each of the output units and the voltage regulator has a switching device that is switchable on and off, and

among the output units and the voltage regulator, one having a highest frequency for switching on and off the switching device is disposed on an outer side in a stacking direction.

14. The semiconductor device according to claim 13, wherein the voltage regulator has a frequency higher than that of each of the output units.

15. The semiconductor device according to claim 14, wherein the voltage regulator is disposed upstream of all the output units in an air flow.

16. The semiconductor device according to claim 13, wherein

the voltage regulator further includes a high voltage unit having a switching device and a low voltage unit having a switching device and receiving a voltage lower than that applied to the high voltage unit,

a frequency for switching on and off the switching device in the low voltage unit of the voltage regulator is higher than a frequency for switching on and off the switching device in the high voltage unit of the voltage regulator, and

the low voltage unit of the voltage regulator is disposed on an outer side in a stacking direction.

17. The semiconductor device according to claim 16, wherein the low voltage unit of the voltage regulator is disposed upstream of the high voltage unit of the voltage regulator in an air flow.