Pseudo-8T NVSRAM cell with a charge-follower
First Claim
1. A 10T NVSRAM memory cell circuit with a pair of flash-based transistors as a charger, the 10T NVSRAM memory cell comprising:
- a SRAM cell comprising two inverters cross-coupled to a first pass transistor and a second pass transistor commonly gated by a first word line and respectively coupled drains to a first bit line and a second bit line and sources to a first data node and a second data node, the first data node and the second data node respectively being outputted from the two inverters, each inverter including a PMOS device connected to a first power line and a NMOS device connected to a second power line, the first power line and the second power line being operated between a VDD power supply and ground and being separated from a common Nwell node; and
a Flash cell comprising a first cell string and a second cell string sharing a common P-sub, the first/second cell string including a first/second Flash transistor and a first/second Charger transistor connected in series, the first Flash transistor having a first drain node coupled to the first data node, the second Flash transistor having a second drain node coupled to the second data node, the first Charger transistor having a first source node left floating, the second Charger transistor having a second source node left floating, the first Flash transistor and the second Flash transistor being commonly gated by a second word line, the first Charger transistor and the second Charger transistor being commonly gated by a pump word line;
wherein the first Charger transistor and the second Charger transistor are configured to ramp the pump word line up to a high voltage above the VDD level to generate charges and respectively pass through the first Flash transistor with a first threshold level and the second Flash transistor with a second threshold level to create a voltage level difference at the first data node and the second data node by subsequently ramping the second word line to the VDD level, the two cross-coupled inverters are operated to amplify the voltage level difference to a scale of VSS=0V at one of the first data node and the second data node and the VDD level at another one of the first data node and the second data node.
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Abstract
The present invention discloses a 10T NVSRAM cell with a 6T SRAM cell with 4T Flash cell with one dedicated Flash-based Charger. In addition, a Pseudo-8T NVSRAM cell with a shared Flash-based Charger between two adjacent 8T NVSRAM cells at top and bottom in cell layout is also disclosed to further reduce cell size by 20%. As opposed to the prior art of 12T NVSRAM cell, the Store operation of the above two preferred embodiments use a DRAM-like charge-sensing scheme with Flash cell configured into a voltage follower ensured by the Flash-based Charger to obtain the final ΔVQ-QB>0.2V at Q and QB nodes of each SRAM cell to cover all the mismatched of parasitic capacitance in flash cell devices and layout for a reliable amplification by ramping up SRAM'"'"'s VDD line and ramping down SRAM'"'"'s VSS line.
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Citations
45 Claims
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1. A 10T NVSRAM memory cell circuit with a pair of flash-based transistors as a charger, the 10T NVSRAM memory cell comprising:
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a SRAM cell comprising two inverters cross-coupled to a first pass transistor and a second pass transistor commonly gated by a first word line and respectively coupled drains to a first bit line and a second bit line and sources to a first data node and a second data node, the first data node and the second data node respectively being outputted from the two inverters, each inverter including a PMOS device connected to a first power line and a NMOS device connected to a second power line, the first power line and the second power line being operated between a VDD power supply and ground and being separated from a common Nwell node; and a Flash cell comprising a first cell string and a second cell string sharing a common P-sub, the first/second cell string including a first/second Flash transistor and a first/second Charger transistor connected in series, the first Flash transistor having a first drain node coupled to the first data node, the second Flash transistor having a second drain node coupled to the second data node, the first Charger transistor having a first source node left floating, the second Charger transistor having a second source node left floating, the first Flash transistor and the second Flash transistor being commonly gated by a second word line, the first Charger transistor and the second Charger transistor being commonly gated by a pump word line; wherein the first Charger transistor and the second Charger transistor are configured to ramp the pump word line up to a high voltage above the VDD level to generate charges and respectively pass through the first Flash transistor with a first threshold level and the second Flash transistor with a second threshold level to create a voltage level difference at the first data node and the second data node by subsequently ramping the second word line to the VDD level, the two cross-coupled inverters are operated to amplify the voltage level difference to a scale of VSS=0V at one of the first data node and the second data node and the VDD level at another one of the first data node and the second data node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A paired pseudo-8T NVSRAM memory cell circuit with a shared flash charger, the paired pseudo-8T NVSRAM memory cell comprising:
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a first pseudo-8T NVSRAM cell having a first flash source terminal and second flash source terminal; a second pseudo-8T NVSRAM cell having a third flash source terminal and fourth flash source terminal; and a first Charger transistor and a second Charger transistor commonly gated by a pump word line, the first Charger transistor having a first charger drain node connected to the first flash source terminal and a first charger source node connected to the third flash source terminal, the second Charger transistor having a second charger drain node connected to the second flash source terminal and a second charger source node connected to the fourth flash source terminal; wherein the first pseudo-8T NVSRAM cell and the second pseudo-8T NVSRAM cell are configured to be substantially same in a NVSRAM cell structure sharing separately a first common power line and a second common power line respectively operated between a VDD power supply and ground, the NVSRAM cell structure comprising, a SRAM cell comprising two inverters cross-coupled to a first pass transistor and a second pass transistor commonly gated by a first word line and respectively coupled drains to a first bit line and a second bit line and sources to a first data node and a second data node, the first data node and the second data node respectively being outputted from the two inverters, each inverter including a PMOS device connected to the first power line and a NMOS device connected to the second power line, the first power line and the second power line being separated from a common Nwell node; and a Flash cell comprising a first cell string and a second cell string sharing a common P-sub, the first/second cell string including a first/second Flash transistor, the first Flash transistor having a first drain node and a first source node, the first drain node being coupled to the first data node, the second Flash transistor having a second drain node and a second source node, the second drain node being coupled to the second data node, the first Flash transistor and the second Flash transistor being commonly gated by a second word line; wherein the first/second source node of the first pseudo-8T NVSRAM cell is the first/second flash source terminal and the first/second source node of the second pseudo-8T NVSRAM cell is the third/fourth flash source terminal; wherein the first Charger transistor and the second Charger transistor are configured to ramp the pump word line up to a high voltage above the VDD level to generate charges and use a charge-sensing scheme and voltage-follower operation for performing a Recall operation to write a Flash logic state represented by threshold levels of the first Flash transistor and the second Flash transistor in either the first pseudo-8T NVSRAM cell or the second pseudo-8T NVSRAM cell to corresponding SRAM logic state stored by voltage levels of the first data node and the second data node in corresponding the first pseudo-8T NVSRAM cell or the second pseudo-8T NVSRAM cell. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification