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Read/write operations in solid-state storage devices

  • US 8,972,837 B2
  • Filed: 12/17/2012
  • Issued: 03/03/2015
  • Est. Priority Date: 12/21/2011
  • Status: Active Grant
First Claim
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1. A method for reading and writing data in q-level cells of solid-state memory, where q>

  • 2, the method comprising;

    encoding input data into codewords having N qary symbols, wherein the symbols of each of the plurality of codewords satisfy a single-parity-check condition;

    writing each of the plurality of symbols in respective q-level cells of the solid state memory by setting the cell to a level dependent on the qary value of the symbol;

    reading memory cells to obtain read signals corresponding to respective codewords; and

    detecting the codewords corresponding to respective read signals by relating the read signals to a predetermined set of N-symbol vectors of one of which each possible codeword is a permutation.

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