Pressure sensor and microphone
First Claim
1. A pressure sensor comprising:
- a base; and
a first sensor unit provided on the base,the first sensor unit including;
a first transducer thin film having a first membrane surface, the first transducer thin film being flexible;
a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and
a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic,the second strain sensing device being disposed between the first strain sensing device and the barycenter.
1 Assignment
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Accused Products
Abstract
According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.
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Citations
32 Claims
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1. A pressure sensor comprising:
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a base; and a first sensor unit provided on the base, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, the second strain sensing device being disposed between the first strain sensing device and the barycenter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A pressure sensor comprising:
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a base; a first sensor unit provided on the base; and a processing circuit, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, a distance between the first strain sensing device and the barycenter being the same as a distance between the second strain sensing device and the barycenter, a first straight line passing the first strain sensing device and the barycenter being oblique with respect to the a second straight line passing the second strain sensing and the barycenter, a magnetization direction of the third magnetic layer being along one of a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer, a magnetization direction of the fourth magnetic layer being along the other of the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer, the processing circuit being configured to process a first signal obtained from the first strain sensing device and a second signal obtained from the second strain sensing device, and the processing circuit being configured to perform at least one of an adding process of the first signal and the second signal, a subtracting process of the first signal and the second signal, and a multiplying process of the first signal and the second signal. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A pressure sensor comprising:
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a base; a first sensor unit provided on the base; and a processing circuit, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, the processing circuit being configured to process a first signal obtained from the first strain sensing device and a second signal obtained from the second strain sensing device, and the processing circuit being configured to perform at least one of an adding process of the first signal and the second signal, a subtracting process of the first signal and the second signal, and a multiplying process of the first signal and the second signal. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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27. A microphone comprising a pressure sensor including:
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a base; and a first sensor unit provided on the base, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, the second strain sensing device being disposed between the first strain sensing device and the barycenter.
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28. A microphone comprising a pressure sensor including:
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a base; a first sensor unit provided on the base; and a processing circuit, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, a distance between the first strain sensing device and the barycenter being the same as a distance between the second strain sensing device and the barycenter, a first straight line passing the first strain sensing device and the barycenter being oblique with respect to the a second straight line passing the second strain sensing device and the barycenter, a magnetization direction of the third magnetic layer being along one of a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer, a magnetization direction of the fourth magnetic layer being along the other of the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer, the processing circuit being configured to process a first signal obtained from the first strain sensing device and a second signal obtained from the second strain sensing device, and the processing circuit being configured to perform at least one of an adding process of the first signal and the second signal, a subtracting process of the first signal and the second signal, and a multiplying process of the first signal and the second signal.
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29. A microphone comprising a pressure sensor including:
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a base; a first sensor unit provided on the base; and a processing circuit, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, the processing circuit being configured to process a first signal obtained from the first strain sensing device and a second signal obtained from the second strain sensing device, and the processing circuit being configured to perform at least one of an adding process of the first signal and the second signal, a subtracting process of the first signal and the second signal, and a multiplying process of the first signal and the second signal.
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30. A pressure sensor comprising:
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a base; and a first sensor unit provided on the base, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, the second strain sensing device being disposed between the first strain sensing device and the barycenter, wherein the first sensor unit further includes a fixing unit connected to an edge portion of the first transducer thin film and configured to fix the edge portion to the base, and the fixing unit continuously fixes the edge portion of the first transducer thin film to the base.
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31. A pressure sensor comprising:
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a base; and a first sensor unit provided on the base, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, a distance between the first strain sensing device and the barycenter being the same as a distance between the second strain sensing device and the barycenter, wherein the first sensor unit further includes a fixing unit connected to an edge portion of the first transducer thin film and configured to fix the edge portion to the base, and the fixing unit continuously fixes the edge portion of the first transducer thin film to the base.
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32. A pressure sensor comprising:
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a base; a first sensor unit provided on the base; and a processing circuit, the first sensor unit including; a first transducer thin film having a first membrane surface, the first transducer thin film being flexible; a first strain sensing device provided at a location on the first membrane surface different from a location of a barycenter of the first membrane surface, the first strain sensing device including a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; and a second strain sensing device provided apart from the first strain sensing device on the first membrane surface and provided at a location different from the location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic, the processing circuit being configured to process a first signal obtained from the first strain sensing device and a second signal obtained from the second strain sensing device, and the processing circuit being configured to perform at least one of an adding process of the first signal and the second signal, a subtracting process of the first signal and the second signal, and a multiplying process of the first signal and the second signal, wherein the first sensor unit further includes a fixing unit connected to an edge portion of the first transducer thin film and configured to fix the edge portion to the base, and wherein the fixing unit continuously fixes the edge portion of the first transducer thin film to the base.
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Specification