Stacked bit line dual word line nonvolatile memory
First Claim
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1. A manufacture method of a semiconductor device, comprising:
- providing a substrate;
forming first and second conductive lines over the substrate;
forming a first plug coupled to the first conductive line, and orthogonal to the first conductive line and the substrate;
forming a second plug coupled to the second conductive line, and orthogonal to the second conductive line and the substrate;
forming a first memory cell disposed on a first sidewall beside the first plug, the first sidewall being orthogonal to the substrate; and
forming a second memory cell disposed on a second sidewall beside the second plug, the second sidewall being orthogonal to the substrate, wherein the first memory cell is over the second memory cell.
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Abstract
An arrangement of nonvolatile memory devices, having at least one memory device level stacked level by level above a semiconductor substrate, each memory level comprising an oxide layer substantially disposed above a semiconductor substrate, a plurality of word lines substantially disposed above the oxide layer; a plurality of bit lines substantially disposed above the oxide layer; a plurality of via plugs substantially in electrical contact with the word lines and, an anti-fuse dielectric material substantially disposed on side walls beside the bit lines and substantially in contact with the plurality of bit lines side wall anti-fuse dielectrics.
16 Citations
19 Claims
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1. A manufacture method of a semiconductor device, comprising:
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providing a substrate; forming first and second conductive lines over the substrate; forming a first plug coupled to the first conductive line, and orthogonal to the first conductive line and the substrate; forming a second plug coupled to the second conductive line, and orthogonal to the second conductive line and the substrate; forming a first memory cell disposed on a first sidewall beside the first plug, the first sidewall being orthogonal to the substrate; and forming a second memory cell disposed on a second sidewall beside the second plug, the second sidewall being orthogonal to the substrate, wherein the first memory cell is over the second memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A manufacture method of a semiconductor device, comprising:
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forming a first conductive line; forming a second conductive line orthogonal to the first conductive line; forming a plug coupled to the first conductive line, and orthogonal to the first and second conductive lines; forming a memory cell disposed on a sidewall beside the plug, and between the second conductive line and the plug; and wherein the second conductive line comprises polysilicon having a first conductivity type, and the plug comprises polysilicon having a second conductivity type opposite the first conductivity type. - View Dependent Claims (9, 10, 11, 12)
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13. A method of fabricating an arrangement of nonvolatile memory devices, the method comprising:
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(a) providing a semiconductor substrate; (b) forming an oxide layer; (c) forming a plurality of word lines above the oxide layer; (d) forming a plurality of bit lines above the oxide layer; (e) etching a plurality of via holes formed between the plurality of word lines and the plurality of bit lines; (f) forming a memory material disposed beside the plurality of bit lines and in electrical contact with the plurality of bit lines, the memory material forming a plurality of side wall memory elements beside the bit lines; and (g) forming a plurality of via plugs in electrical communication with the plurality of word lines and in electrical communication with the plurality of side wall memory elements. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification