Method for manufacturing bonded wafer
First Claim
1. A method for manufacturing a bonded wafer comprising a semiconductor film on a surface of a handle substrate, the method comprising the steps of:
- implanting ions into a semiconductor substrate from a surface of the semiconductor substrate to form an ion-implanted layer;
subjecting at least one of the surface of the ion-implanted semiconductor substrate and the surface of the handle substrate to a surface activation treatment;
bonding, after the surface activation treatment, the surface of the semiconductor substrate to the surface of the handle substrate at a temperature of from 50°
C. to 260°
C.;
heating the bonded substrates at a maximum temperature of from 200°
C. to 350°
C. to obtain a bonded body; and
transferring the semiconductor film to the handle wafer by subjecting the bonded body to a temperature higher by 30°
C. to 100°
C. than the bonding temperature in the step of bonding, and irradiating the bonded body with visible light from a handle substrate side or a semiconductor substrate side toward the ion-implanted layer of the semiconductor substrate to make an interface of the ion-implanted layer brittle due to both an energy of the higher temperature and an energy of the visible light,wherein the step of transferring comprises applying a mechanical impact to the interface of the ion-implanted layer for detachment along the interface, after the irradiation with visible light to such an extent that thermal detachment does not take place;
or applying a mechanical impact to a vicinity of an interface between the bonded substrates at an edge of the bonded body, before the irradiation with visible light so that heat impact applied by the irradiation with the light is transmitted from an origin of the mechanical impact at the edge to an entire surface of the bonded body, causing destruction at the interface.
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Accused Products
Abstract
A method for manufacturing a bonded wafer having a semiconductor film on a handle substrate involving the steps of: implanting ions into a semiconductor substrate to form an ion-implanted layer; subjecting the surface of at least one of the semiconductor substrate and the handle substrate to a surface activation treatment; bonding the surface of the semiconductor substrate to the surface of the handle substrate at a temperature from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to obtain a bonded body; and transferring a semiconductor film to the handle substrate by subjecting the bonded body to a temperature 30° C. to 100° C. higher than the bonding temperature, and irradiating the bonded body with visible light from a handle or semiconductor substrate side toward the ion-implanted layer of the semiconductor substrate to embrittle the interface of the ion-implanted layer.
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Citations
11 Claims
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1. A method for manufacturing a bonded wafer comprising a semiconductor film on a surface of a handle substrate, the method comprising the steps of:
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implanting ions into a semiconductor substrate from a surface of the semiconductor substrate to form an ion-implanted layer; subjecting at least one of the surface of the ion-implanted semiconductor substrate and the surface of the handle substrate to a surface activation treatment; bonding, after the surface activation treatment, the surface of the semiconductor substrate to the surface of the handle substrate at a temperature of from 50°
C. to 260°
C.;heating the bonded substrates at a maximum temperature of from 200°
C. to 350°
C. to obtain a bonded body; andtransferring the semiconductor film to the handle wafer by subjecting the bonded body to a temperature higher by 30°
C. to 100°
C. than the bonding temperature in the step of bonding, and irradiating the bonded body with visible light from a handle substrate side or a semiconductor substrate side toward the ion-implanted layer of the semiconductor substrate to make an interface of the ion-implanted layer brittle due to both an energy of the higher temperature and an energy of the visible light,wherein the step of transferring comprises applying a mechanical impact to the interface of the ion-implanted layer for detachment along the interface, after the irradiation with visible light to such an extent that thermal detachment does not take place;
or applying a mechanical impact to a vicinity of an interface between the bonded substrates at an edge of the bonded body, before the irradiation with visible light so that heat impact applied by the irradiation with the light is transmitted from an origin of the mechanical impact at the edge to an entire surface of the bonded body, causing destruction at the interface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification
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- Resources
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Current AssigneeShin-Etsu Chemical Company Limited
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Original AssigneeShin-Etsu Chemical Company Limited
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InventorsAkiyama, Shoji
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Primary Examiner(s)Toledo, Fernando L
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Assistant Examiner(s)PRASAD, NEIL R
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Application NumberUS13/318,944Publication NumberTime in Patent Office1,769 DaysField of Search257/629, 257/E29.068, 257/E21.568, 438/458US Class Current438/458CPC Class CodesH01L 21/187 by direct bondingH01L 21/76254 with separation/delaminatio...
