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Gate stacks including Ta;Si;O for MOSFETS

  • US 8,975,706 B2
  • Filed: 12/19/2013
  • Issued: 03/10/2015
  • Est. Priority Date: 08/06/2013
  • Status: Expired due to Fees
First Claim
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1. A method of forming a FET assembly, the method comprising:

  • providing a channel region;

    forming an interface layer over the channel region; and

    forming a dielectric layer over the interface layer such that the interface layer is disposed between the channel region and the dielectric layer,the dielectric layer comprising a tantalum silicon oxide,wherein an atomic ratio of silicon to a total amount of silicon and tantalum is less than 0.05,wherein forming the dielectric layer comprises;

    supplying a tantalum containing precursor into a deposition chamber such that the tantalum containing precursor adsorbs on a surface of the interface layer,after the tantalum containing precursor is adsorbed on the surface of the interface layer, supplying a silicon containing precursor into the deposition chamber such that the silicon containing precursor adsorbs on the surface of the interface layer already having the tantalum containing precursor previously adsorbed on the surface of the interface layer,wherein, after supplying the silicon containing precursor into the deposition chamber an amount of the silicon containing precursor adsorbed on the surface of the interface layer is less than an amount of the tantalum containing precursor adsorbed on the surface of the interface layer, andafter the tantalum containing precursor and the silicon containing precursor are adsorbed on the surface of the interface layer, supplying an oxygen containing reagent into the deposition chamber such that the oxygen containing reagent reacts with the silicon containing precursor and the tantalum containing precursor adsorbed on the surface of the interface layer thereby forming the tantalum silicon oxide.

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