Ultasound probe providing dual backing layer
First Claim
1. An ultrasound probe comprising:
- a capacitive vibration element configured to mutually convert ultrasound and an electric signal;
a semiconductor substrate including a plurality of the capacitive vibration elements formed on the surface thereof;
an acoustic lens provided on a front face side of the capacitive vibration element; and
a backing layer provided on a rear face side of the semiconductor substrate,wherein the backing layer includes a first backing layer set in contact with the semiconductor substrate and a second backing layer provided on a rear face side of the first backing layer,wherein an acoustic impedance of the first backing layer is set on the basis of a thickness of the semiconductor substrate,wherein the second backing layer is formed of an attenuating material capable of attenuating the ultrasound transmitted through the first backing layer, andwherein an acoustic impedance of the second backing layer is set to match the acoustic impedance of the first backing layer.
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0 Petitions
Accused Products
Abstract
Disclosed is an ultrasonic probe comprising: CMUT cells (13) that mutually convert ultrasonic waves and electrical signals; a semiconductor substrate (15) that has a plurality of the CMUT cells (13) formed on the surface thereof; an acoustic lens (3) that is provided on the front face side of the CMUT cells (13); and a backing layer (5) that is provided on the rear face side of the semiconductor substrate (15). The backing layer (5) is formed by a first backing layer (27) that makes contact with the semiconductor substrate, and a second backing layer (29) that is provided on the rear face side of the backing layer (27). The acoustic impedance of the backing layer (27) is set based on the sheet thickness of the semiconductor substrate (15). The backing layer (29) is formed by attenuating material capable of attenuating ultrasonic waves transmitted through the backing layer (27). Multiple reflection of reflection echoes is suppressed by setting the acoustic impedance of the backing layer (29) to match the acoustic impedance of the backing layer (27).
27 Citations
12 Claims
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1. An ultrasound probe comprising:
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a capacitive vibration element configured to mutually convert ultrasound and an electric signal; a semiconductor substrate including a plurality of the capacitive vibration elements formed on the surface thereof; an acoustic lens provided on a front face side of the capacitive vibration element; and a backing layer provided on a rear face side of the semiconductor substrate, wherein the backing layer includes a first backing layer set in contact with the semiconductor substrate and a second backing layer provided on a rear face side of the first backing layer, wherein an acoustic impedance of the first backing layer is set on the basis of a thickness of the semiconductor substrate, wherein the second backing layer is formed of an attenuating material capable of attenuating the ultrasound transmitted through the first backing layer, and wherein an acoustic impedance of the second backing layer is set to match the acoustic impedance of the first backing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An ultrasound probe comprising:
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a capacitive vibration element configured to mutually convert ultrasound and an electric signal; a semiconductor substrate including a plurality of the capacitive vibration elements formed on the surface thereof; an acoustic lens provided on a front face side of the capacitive vibration element; and a backing layer provided on a rear face side of the semiconductor substrate, wherein the backing layer includes a first backing layer set in contact with the semiconductor substrate and a second backing layer provided on a rear face side of the first backing layer, wherein an acoustic impedance of the second backing layer is set to match the acoustic impedance of the first backing layer, wherein the first backing layer is formed to resin and is formed by mixing, in the resin, an adjusting material for adjusting a coefficient of linear expansion of the first backing layer to be close to a coefficient of linear expansion of the semiconductor substrate, and wherein the adjusting material is carbon fiber or glass fiber is mixed in the resin with a longitudinal direction of the fiber adjusted to a longitudinal direction of the first backing layer.
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12. An ultrasound probe comprising:
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a capacitive vibration element configured to mutually convert ultrasound and an electric signal; a semiconductor substrate including a plurality of the capacitive vibration elements formed on the surface thereof; an acoustic lens provided on a front face side of the capacitive vibration element; and a backing layer provided on a rear face side of the semiconductor substrate, wherein the backing layer includes a first backing layer set in contact with the semiconductor substrate and a second backing layer provided on a rear face side of the first backing layer, wherein an acoustic impedance of the first backing layer is set based on thickness of the semiconductor substrate, wherein the second backing layer is formed of an attenuating material capable of attenuating the ultrasound transmitted through the first backing layer, wherein an acoustic impedance of the second backing layer is set to match the acoustic impedance of the first backing layer, and wherein the thickness of the semiconductor substrate is equal to or larger than 25 mm and equal to or smaller than 50 mm.
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Specification