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Switching device having a discharge circuit for improved intermodulation distortion performance

  • US 8,975,950 B2
  • Filed: 07/06/2013
  • Issued: 03/10/2015
  • Est. Priority Date: 07/07/2012
  • Status: Active Grant
First Claim
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1. A radio-frequency (RF) switch comprising:

  • a field-effect transistor (FET) disposed between first and second nodes, the FET having a body and a gate; and

    a coupling path connected between the body and gate, the coupling path including a resistor and a capacitor connected in series, such that the capacitor of the coupling path substantially blocks any and all DC current flow from the gate to the body and from the body to the gate.

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