Switching device having a discharge circuit for improved intermodulation distortion performance
First Claim
1. A radio-frequency (RF) switch comprising:
- a field-effect transistor (FET) disposed between first and second nodes, the FET having a body and a gate; and
a coupling path connected between the body and gate, the coupling path including a resistor and a capacitor connected in series, such that the capacitor of the coupling path substantially blocks any and all DC current flow from the gate to the body and from the body to the gate.
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Accused Products
Abstract
Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.
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Citations
17 Claims
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1. A radio-frequency (RF) switch comprising:
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a field-effect transistor (FET) disposed between first and second nodes, the FET having a body and a gate; and a coupling path connected between the body and gate, the coupling path including a resistor and a capacitor connected in series, such that the capacitor of the coupling path substantially blocks any and all DC current flow from the gate to the body and from the body to the gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating a semiconductor die, the method comprising:
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providing a semiconductor substrate; forming a field-effect transistor (FET) on the semiconductor substrate, the FET having a gate and a body; and forming a coupling circuit on the semiconductor substrate that is connected to the body and gate and includes a resistor and a capacitor connected in series, such that the capacitor of the coupling circuit substantially blocks any and all DC current flow from the gate to the body and from the body to the gate. - View Dependent Claims (10, 11)
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12. A radio-frequency (RF) switch module comprising:
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a packaging substrate configured to receive a plurality of components; a semiconductor die mounted on the packaging substrate, the die including a field-effect transistor (FET); and a coupling circuit that couples a body and a gate of the FET, the coupling circuit including a resistor and a capacitor connected in series, such that the capacitor of the coupling circuit substantially blocks any and all DC current flow from the gate to the body and from the body to the gate. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification