Apparatus for supporting substrate and plasma etching apparatus having the same
First Claim
1. A plasma etching apparatus, comprising:
- a chamber comprising a compartment;
a plasma generator disposed at the chamber;
a mask part disposed in the compartment;
a substrate support disposed under the mask part;
a gas supply unit configured to supply a process gas to the compartment; and
a shield part;
wherein;
the chamber comprises upper and lower chambers that are detachably coupled to each other,a through hole is disposed in an upper wall of the lower chamber,the upper chamber comprises a recess corresponding to the through hole,the mask part is disposed at a lower surface of an upper wall of the upper chamber,the shield part is disposed in the chamber and formed to have a ring shape extending from the upper wall of the lower chamber to the upper wall of the upper chamber,the shield part is disposed along a periphery of the through hole of the lower chamber to divide the chamber into a reaction compartment and a separation compartment,a diameter of the recess is greater than that of the through hole,the substrate support is disposed in the reaction compartment of the chamber and supports a substrate, andthe substrate support moves the substrate loaded into the lower chamber to the recess of the upper chamber or moves the substrate lifted to the recess down to the lower chamber.
2 Assignments
0 Petitions
Accused Products
Abstract
Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
18 Citations
14 Claims
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1. A plasma etching apparatus, comprising:
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a chamber comprising a compartment; a plasma generator disposed at the chamber; a mask part disposed in the compartment; a substrate support disposed under the mask part; a gas supply unit configured to supply a process gas to the compartment; and a shield part; wherein; the chamber comprises upper and lower chambers that are detachably coupled to each other, a through hole is disposed in an upper wall of the lower chamber, the upper chamber comprises a recess corresponding to the through hole, the mask part is disposed at a lower surface of an upper wall of the upper chamber, the shield part is disposed in the chamber and formed to have a ring shape extending from the upper wall of the lower chamber to the upper wall of the upper chamber, the shield part is disposed along a periphery of the through hole of the lower chamber to divide the chamber into a reaction compartment and a separation compartment, a diameter of the recess is greater than that of the through hole, the substrate support is disposed in the reaction compartment of the chamber and supports a substrate, and the substrate support moves the substrate loaded into the lower chamber to the recess of the upper chamber or moves the substrate lifted to the recess down to the lower chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification