Oxygen-doping for non-carbon radical-component CVD films
First Claim
1. A method of forming a silicon oxide layer on a patterned substrate having a trench in a plasma-free substrate processing region in a substrate processing chamber, the method comprising:
- flowing a hydrogen-containing precursor into a first plasma region to produce a radical precursor while flowing an oxygen-containing precursor into a second plasma region to produce a radical-oxygen precursor;
concurrently combining the radical precursor and the radical-oxygen precursor with a carbon-free silicon-containing precursor in the plasma-free substrate processing region, wherein the carbon-free silicon-containing precursor contains nitrogen;
depositing a flowable silicon-oxygen-and-nitrogen-containing layer on the substrate, wherein the flowable silicon-oxygen-and-nitrogen-containing layer flows into the trench on a deposition surface of the patterned substrate as the flowable silicon-oxygen-and-nitrogen-containing layer deposits; and
annealing the silicon-oxygen-and-nitrogen-containing layer at an annealing temperature in an oxygen-containing atmosphere to increase the oxygen-content and decrease the nitrogen-content to form a silicon oxide layer.
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Abstract
Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
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Citations
16 Claims
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1. A method of forming a silicon oxide layer on a patterned substrate having a trench in a plasma-free substrate processing region in a substrate processing chamber, the method comprising:
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flowing a hydrogen-containing precursor into a first plasma region to produce a radical precursor while flowing an oxygen-containing precursor into a second plasma region to produce a radical-oxygen precursor; concurrently combining the radical precursor and the radical-oxygen precursor with a carbon-free silicon-containing precursor in the plasma-free substrate processing region, wherein the carbon-free silicon-containing precursor contains nitrogen; depositing a flowable silicon-oxygen-and-nitrogen-containing layer on the substrate, wherein the flowable silicon-oxygen-and-nitrogen-containing layer flows into the trench on a deposition surface of the patterned substrate as the flowable silicon-oxygen-and-nitrogen-containing layer deposits; and annealing the silicon-oxygen-and-nitrogen-containing layer at an annealing temperature in an oxygen-containing atmosphere to increase the oxygen-content and decrease the nitrogen-content to form a silicon oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification